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    ARCOTEK KM616BV4002J-12

    SRAM ASYNC FAST 4MB 256KX16 3.3V
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    DigiKey KM616BV4002J-12 Tube 100
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    Samsung Semiconductor KM616BV4002J-12

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    Bristol Electronics KM616BV4002J-12 144
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    Quest Components KM616BV4002J-12 55
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    Samsung Semiconductor KM616BV4002J-15

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    Quest Components KM616BV4002J-15 7
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    sec KM616BV4002J12

    256K X 16 BIT HIGH-SPEED BICMOS STATIC RAM(3.3V OPERATING) Standard SRAM, 256KX16, 12ns, BICMOS, PDSO44
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    ComSIT USA KM616BV4002J12 86
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    Others KM616BV4002J15

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    Chip 1 Exchange KM616BV4002J15 965
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    KM616BV4002 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM616BV4002J-12 Samsung Electronics 256 x 16-Bit High Speed BiCMOS Static RAM Scan PDF
    KM616BV4002J-15 Samsung Electronics 256 x 16-Bit High Speed BiCMOS Static RAM Scan PDF
    KM616BV4002J-20 Samsung Electronics 256 x 16-Bit High Speed BiCMOS Static RAM Scan PDF

    KM616BV4002 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original
    CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 PDF

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original
    CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256 PDF

    KM616BV4002

    Abstract: KM616BV4002J
    Text: KM616BV4002 BiCMOS SRAM 256K x 16 Bit High-Speed BiCMOS Static RAM 3.3V Operatina FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 3,15 ns(M ax.) • Low Pow er Dissipation Standby (TT L) : 6 0 m A(M ax.) <C M O S):30 m A(M ax.) Operating K M 61 6 B V 4 0 0 2 -1 2 : 2 4 0 m A(M ax.)


    OCR Scan
    KM616BV4002 KM616BV4002-12 KM616BV4002-13 KM616BV4002-15: I/09-I/016 KM616BV4002J 44-SOJ-400 KM616BV4002 304-bit KM616BV4002J PDF

    Untitled

    Abstract: No abstract text available
    Text: KM616BV4002 BiCMOS SRAM 256Kx 16 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 3 ,1 5 ns(M ax.) • Low Pow er Dissipation Standby (TT L) : 6 0 m A (M ax.) (C M O S ):3 0 m A(M ax.) O perating K M 6 1 6 B V 4 0 0 2 -1 2 : 2 4 0 m A (M ax.)


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    KM616BV4002 256Kx PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM616BV4002 25 6K x 16 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):30 mA(Max.) Operating KM 616BV4002J-12 : 240m A (M ax.)


    OCR Scan
    KM616BV4002 616BV4002J-12 KM616BV4002J-15 4002J-20: KM616BV4002J 44-SOJ-400 KM616BV4002 304-bit 0031fc PDF

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM616BV4002 Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993


    OCR Scan
    KM616BV4002 256Kx16 10/12/15ns 12/15/20ns 8/10/12ns PDF

    A13j

    Abstract: 3b711 KM616BV4002 KM616BV4002J
    Text: KM616BV4002 CMOS SRAM 256K x16B it High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM616BV4002-12:240mA(Max.)


    OCR Scan
    KM616BV4002 256Kx 16Bit KM616BV4002-12 240mA KM616BV4002 KM616BV4002J 36-SOJ-400 512x18 A13j 3b711 KM616BV4002J PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information BiCMOS SRAM KM616BV4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175mA(Max.)


    OCR Scan
    KM616BV4002 KM616BV4002J-12 175mA KM616BV4002J-15 160mA KM616BV4002J-20 155mA KM616BV4002 16-bits. 44-SO] PDF

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM616BV4002 Document Tit! 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target


    OCR Scan
    KM616BV4002 256Kx16 10/12/15ns 12/15/20ns 44-SOJ-400 PDF

    KO10

    Abstract: No abstract text available
    Text: Advanced Information KM616BV4002 BiCMOS SRAM 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby fTTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175mA(Max.)


    OCR Scan
    KM616BV4002 KM616BV4002J-12 175mA KM616BV4002J-15 160mA KM616BV4002J-20 155mA 44-SOJ-4 KM616BV4002 16-bits. KO10 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM616BV4002 BICMOS SRAM 256K X 16 Bit High-Speed BiCMOS Static RAM 3.3v Operating FEATURES G E N E R A L D E S C R IP T IO N •Fast Access Time 12,13,15ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max) Operating KM616BV4002 -1 2 : 240mA(Max.)


    OCR Scan
    KM616BV4002 KM616BV4002 240mA 235mA 230mA 1/01-l/Os, KM616BV4002J 44-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM616BV4002 CMOS SRAM 256K x 16Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM616BV4002 -1 2 :2 4 0 mA(Max.)


    OCR Scan
    KM616BV4002 16Bit KM616BV4002 KM616BV4002J: 36-SQJ-400 304-bit September-1996 PDF

    KM616BV4002

    Abstract: KM616BV4002J KM616BV4002J-12 KM616BV4002J-15 KM616BV4002J-20
    Text: PRELIMINARY BiCMOS SRAM KM616BV4002 25 6K x 16 Bit High-Speed BiCMOS Static RAM 3.3V Operating GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):30 mA(Max.) Operating KM616BV4002J-12 : 240m A (M ax.)


    OCR Scan
    KM616BV4002 256Kx KM616BV4002J-12 240mA KM616BV4002J-15 KM616BV4002J-20 I/O9-4/O16 KM616BV4002J 44-SOJ-400 KM616BV4002 KM616BV4002J KM616BV4002J-12 KM616BV4002J-15 KM616BV4002J-20 PDF

    KM616BV4002J-15

    Abstract: KM616BV4002 KM616BV4002J-12 KM616BV4002J-20 II06 A16-A17
    Text: Advanced Information BiCMOS SRAM KM616BV4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 1 2 ,1 5 ,20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175m A(Max.)


    OCR Scan
    KM616BV4002 KM616BV4002J-12 175mA KM616BV4002J-15 160mA KM616BV4002J-20 155mA I/09-I/016 44-SOJ-400 KM616BV4002 KM616BV4002J-15 KM616BV4002J-12 KM616BV4002J-20 II06 A16-A17 PDF

    6BV4002

    Abstract: KM616BV4002
    Text: KM616BV4002 BiCMOS SRAM D o cu m e n t Title 256K x16 Bit High Speed Static RAM 3.3V O perating , Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory D raft Data R em ark R ev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.


    OCR Scan
    KM616BV4002 256Kx16 10/12/15ns 12/15/20ns 12/15/20ns I/01-I/08 I/09-I/016 44-SOJ-400 028tg 6BV4002 KM616BV4002 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM616BV4002 BiCMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target


    OCR Scan
    KM616BV4002 256Kx16 10/12/15ns 12/15/20ns PDF

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan
    256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L PDF

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 KM41C4000C-7 KM41C4000C-8 KM41C4000C-5


    OCR Scan
    KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000 PDF

    KM616V4002A

    Abstract: 6161002 ER255 KM732V589
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15


    OCR Scan
    KM62256C 128Kx KM68512A KM681000B KM681000C2 KM718B90 KM718BV87AT KM732V588 KM732V589/L. KM716V689 KM616V4002A 6161002 ER255 KM732V589 PDF

    SOJ 44

    Abstract: 1MX1 KM6865
    Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001


    OCR Scan
    KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL SOJ 44 1MX1 KM6865 PDF

    KM736V789-60

    Abstract: 512k*8 sram KM68U4000A
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -


    OCR Scan
    KM622S6C KM62256D KM68S12A KM68512B KM681OOOB 32Kx8 64KX8 128KX8 KM736V789-60 512k*8 sram KM68U4000A PDF

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan
    KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL PDF

    KM616U1000BL-L

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI


    OCR Scan
    KM62256CL KM62256CL-L KM62256CLE KM62256CLE-L KM62256CLI KM62256CLI-L 28-TSOP 28-DIP 28-SOP KM68512CL KM616U1000BL-L PDF

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


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    010/J/T KM68512 12BKX8 km6865b PDF