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    Gems Sensors & Controls KM681000BLP-7

    Ls-77700 Series Bent Stem Level Switch |Gems Sensors KM681000BLP-7
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    Newark KM681000BLP-7 Bulk 5
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    Samsung Semiconductor KM681000BLG-5

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    Quest Components KM681000BLG-5 2,851
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    Samsung Semiconductor KM681000BLG-7

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    Samsung Semiconductor KM681000BLT-7L

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    KM681000BL Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM681000BL Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLE Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLE-L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLG-5 Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLG-5 Samsung Electronics 128K x 8 bit CMOS static RAM, 55ns, low power Original PDF
    KM681000BLG-5 Samsung Electronics 128K x 8 bit Low Power CMOS Static RAM Scan PDF
    KM681000BLG-5L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLG-5L Samsung Electronics 128K x 8 bit CMOS static RAM, 55ns, low low power Original PDF
    KM681000BLG-5L Samsung Electronics 128K x 8 bit Low Power CMOS Static RAM Scan PDF
    KM681000BLG-7 Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLG-7 Samsung Electronics 128K x 8 bit CMOS static RAM, 70ns, low power Original PDF
    KM681000BLG-7 Samsung Electronics 128K x 8 bit Low Power CMOS Static RAM Scan PDF
    KM681000BLG-7L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLG-7L Samsung Electronics 128K x 8 bit CMOS static RAM, 70ns, low low power Original PDF
    KM681000BLG-7L Samsung Electronics 128K x 8 bit Low Power CMOS Static RAM Scan PDF
    KM681000BLGE-10 Samsung Electronics 128K x 8 bit CMOS static RAM, 100ns, low power Original PDF
    KM681000BLGE-10L Samsung Electronics 128K x 8 bit CMOS static RAM, 100ns, low low power Original PDF
    KM681000BLGE-7 Samsung Electronics 128K x 8 bit CMOS static RAM, 70ns, low power Original PDF
    KM681000BLGE-7 Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLGE-7 Samsung Electronics 128K x 8 bit Low Power CMOS Static RAM Scan PDF

    KM681000BL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    equivalent ic to PAL 007 E MOSFET

    Abstract: mini Audio transformer 200k to 1k ct input LM35 sensor and NPN transistor based automatic fan controller 8051 elevator control interfacing zener diodes color coded cathode LS414B AT8958252-24PC melf zener diodes color code atmel 89s8252 sample code 89S8252 equivalent
    Text: INDEX Order Code Description Manufacturer 789-719 789-707 792-731 792-561 704-453 704-441 792-160 791-787 790-722 703-722 703-710 597-351 597-363 597-375 941-864 705-263 663-773 705-275 704-957 786-809 786-810 786-822 795-410 505-031 792-962 793-061 793-358


    Original     		CLC408AJE: CLC408AJP: CLC436AJP: CLC533AJP: HDSP-4850 HDSP-4832 HDSP-4836 HLCP-J100 HLMP-2598 HLMP-2599 equivalent ic to PAL 007 E MOSFET mini Audio transformer 200k to 1k ct input LM35 sensor and NPN transistor based automatic fan controller 8051 elevator control interfacing zener diodes color coded cathode LS414B AT8958252-24PC melf zener diodes color code atmel 89s8252 sample code 89S8252 equivalent PDF

    KS32C6100

    Abstract: XD10-XD26 1n414b 29ee512 0xc02c CON26x2 ldr 6k DA10 DA11 CDM14
    Text: 21-32-6100-0598 USER'S MANUAL KS32C6100 32-Bit RISC Microcontroller Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any


    Original     		KS32C6100 32-Bit KS32C6100 XD10-XD26 1n414b 29ee512 0xc02c CON26x2 ldr 6k DA10 DA11 CDM14 PDF

    LSI2032

    Abstract: 27C040 equivalent 29F040 HM628512 27C010 27C256 27C512 MC68HC901 MCF5204 9-pin-to-25-pin
    Text: SBC5204 USER'S MANUAL REVISION 1.1 Copyright 1996, 1997 Arnewsh Inc. Arnewsh Inc. P.O. Box 270352 Fort Collins, CO 80527-0352 Phone: 970 223-1616 Fax: (970) 223-9573 ii COPYRIGHT Copyright 1996, 1997 by Arnewsh Inc. All rights reserved. No part of this manual and the dBUG software provided in Flash ROM’s/EPROM’s


    Original     		SBC5204 LT1086CT LSI2032 27C040 equivalent 29F040 HM628512 27C010 27C256 27C512 MC68HC901 MCF5204 9-pin-to-25-pin PDF

    lsi2032

    Abstract: MC68HC901 HM628512 27C010 27C256 27C512 MCF5204 9-pin-to-25-pin SBC306 ColdFire v5
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. SBC5204 USER'S MANUAL REVISION 1.1 Copyright 1996, 1997 Arnewsh Inc. Arnewsh Inc. P.O. Box 270352 Fort Collins, CO 80527-0352 Phone: 970 223-1616 Fax: (970) 223-9573 For More Information On This Product,


    Original     		SBC5204 LT1086CT lsi2032 MC68HC901 HM628512 27C010 27C256 27C512 MCF5204 9-pin-to-25-pin SBC306 ColdFire v5 PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 PDF

    Arnewsh

    Abstract: No abstract text available
    Text: SBC5204 USER'S MANUAL REVISION 1.1 Copyright 1996, 1997 Arnewsh Inc. Arnewsh Inc. P.O. Box 270352 Fort Collins, CO 80527-0352 Phone: 970 223-1616 Fax: (970) 223-9573 COPYRIGHT Copyright 1996, 1997 by Arnewsh Inc. All rights reserved. No part of this manual and the dBUG software provided in Flash ROM’s/EPROM’s


    Original     		SBC5204 MC145407 LT1086CT Arnewsh PDF

    z5 smd zener diode code D5

    Abstract: AT29C010-90ns a52 zener diode PMC-970285 "red led" 5mm 33164 A54 ZENER atmel 928 transistor WTs smd MC68HC16
    Text: PM5342 SPECTRA-155 REFERENCE DESIGN REFERENCE DESIGN PMC-970285 ISSUE 1 SONET/SDH NODE OPTICAL INTERFACE FOR WAN NETWORK REFERENCE DESIGN SNOW BOARD PM5342 SPECTRA-155 SONET/SDH NODE OPTICAL INTERFACE FOR WAN NETWORKS REFERENCE DESIGN (SNOW BOARD) REFERENCE DESIGN


    Original     		PM5342 SPECTRA-155 PMC-970285 PM5342 z5 smd zener diode code D5 AT29C010-90ns a52 zener diode PMC-970285 "red led" 5mm 33164 A54 ZENER atmel 928 transistor WTs smd MC68HC16 PDF

    "yellow led" 5mm

    Abstract: yellow led 5mm "red led" 5mm a39 zener diode HEADER 5X2 a88 zener mc68hc16 33164 atmel 928 smd diode B3E
    Text: PM5342 SPECTRA-155 REFERENCE DESIGN REFERENCE DESIGN PMC-970285 ISSUE 1 SONET/SDH NODE OPTICAL INTERFACE FOR WAN NETWORK REFERENCE DESIGN SNOW BOARD PM5342 SPECTRA-155 SONET/SDH NODE OPTICAL INTERFACE FOR WAN NETWORKS REFERENCE DESIGN (SNOW BOARD) REFERENCE DESIGN


    Original     		PM5342 SPECTRA-155 PMC-970285 PM5342 "yellow led" 5mm yellow led 5mm "red led" 5mm a39 zener diode HEADER 5X2 a88 zener mc68hc16 33164 atmel 928 smd diode B3E PDF

    68 1103

    Abstract: KM681000BL A14F
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced


    OCR Scan     		KM681000BL 128Kx8 385mW KM681OOOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681OOOBLT/BLT-L 0820F) KM681000BLR/BLR-L: 68 1103 A14F PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.


    OCR Scan     		KM681000BLE 128Kx8 550nW 275pW 385mW KM681000BLGE/BLGE-L 32-pin 525mil) KM681000BLTE/BLTE-L PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550(iW (max.) L Version 110fiW (max.) U- Version Operating : 385mW(max.) • Single 5V±10% Power Supply


    OCR Scan     		KM681000BL 128Kx8 110fiW 385mW KM681OQOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681000BLT/BLT-L 0820F) PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681000BL/BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION Pin Nam e ? —? p ÒÒ OOp OOcolt Pin Function A 0 -A 16 Address Inputs We Write Enable input CS1, CS2 Chip Seet Input ÔE 1/01-1/08 uuuuyuyuyuuuyuuu PIN CONFIGURATION Top Views


    OCR Scan     		KM681000BL/BL-L KM681000BL7BL-L 576-bit KM681000BL/BL-L KM681000B1VBL-L 20/iA D10Eb4 PDF

    KM681000BLE

    Abstract: No abstract text available
    Text: CMOS SRAM KM681000BLE / BLE-L 128Kx8 B it Extended Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • E x te n d e d T e m p e ra tu r e R a n g e : -2 5 to 85°C T h e K M 6 8 1 0 0 0 B L E /B L E -L is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d


    OCR Scan     		KM681000BLE 128Kx8 550nW 385mW KM681000BLGE/BLGE-L 32-pin 525mil) KM681000BLTE/BLTE-L KM681000BLRE/BLRE-L PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681000BLI/BLI-L CMOS SRAM 128Kx8 Bit Industrial Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range : -40 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power D issipation Standby (CMOS) : 550^W (Max.)L-Ver.


    OCR Scan     		KM681000BLI/BLI-L 128Kx8 385mW KM681000BLGI/BLGI-L 32pin 525mil) 681000BLTI/BLTI-L 0820F) KM681000BLRI/BLRI-L PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L.7E D • 7 ^ 4 1 4 2 0017S12 bSR «SMf iK ADVANCE INFORMATION KM681000BL/KM681OOOB L-L CMOS SRAM 131,072 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns max. • Low Power Dissipation


    OCR Scan     		0017S12 KM681000BL/KM681OOOB 100ns KM681000BLP/BLP-L KM681000BLG/BLG-L: KM681000BLT/BLT KM681000BLR/BLR-L: KM681000BL/BL-L PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION KM681000BL/KM681000BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 10^W(typ.) L-Version 5/jW(typ.) LL-Version Operating


    OCR Scan     		KM681000BL/KM681000BL-L 100ns KM681000BLP/BLPL KM681000BLG/BLG-L: KM681000BLT/BLT-L KM681000BLR/BLR-L: KM681000BL/BL-L 576-bit Random00BL/BL-L PDF

    TAA 310A

    Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible


    OCR Scan     		KM681000B 128Kx8 0023b3? KM681OOOÃ 0D23b3Ã TAA 310A KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000BL KM681000BLE KM681000BL-L PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681OOOBLI/BLI-L CMOS SRAM 131,072 W O RD x 8 Bit C M O S Static RAM<mdustnai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns max.) • Low Power Dissipation Standby (CMOS) : 550;<W(max.)


    OCR Scan     		KM681OOOBLI/BLI-L 100ns 110mW KM681000BLGI/BLG-L 32-SOP-525 KM681000BLTI/BLTI-L 32-TSOP1-0820F KM681000BLRI/BLRI-L 32-TSOP1-0820R KM681000BLI/BLI-L PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product


    OCR Scan     		KM681000B 0820F) 0820R) PDF

    Untitled

    Abstract: No abstract text available
    Text: CM O S SRAM KM681OOOBLI/BLI-L 1 3 1 ,0 7 2 W O fíD X 8 B it C M O S S ts tic R A M industriai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation


    OCR Scan     		KM681OOOBLI/BLI-L 100ns 110mW KM681000BLGI/BLG-L 32-SOP-525 KM681000BLTI/BLTI-L 32-TSOP1-0820F KM681000BLRI/BLRI-L 32-TSOP1-0820R KM681000BLI/BLI-L PDF

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L PDF

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS • Organization: 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage: 2V Min • Three state output and TTL Compatible


    OCR Scan     		KM681000B 128Kx8 KM681000BL4 0023b3? KM681 0G53b3Ã PDF

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000 PDF