Untitled
Abstract: No abstract text available
Text: KSC5029 KSC5029 High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1100
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KSC5029
Collect18
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Untitled
Abstract: No abstract text available
Text: KSC5029 KSC5029 High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage
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KSC5029
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KSC5029
Abstract: No abstract text available
Text: KSC5029 KSC5029 High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1100
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KSC5029
KSC5029
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KSC5029
Abstract: No abstract text available
Text: KSC5029 KSC5029 High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1100
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KSC5029
KSC5029
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fjaf6812
Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320
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O-126
KSC2682
KSC3502
KSC2258
KSC2258A
KSC3503
KSC3953
KSC2688
BD150
KSC5305D
fjaf6812
tip41 darlington
fjaf6920
BUT12(A)F
KSA1010
transistor bd140-15
bu408 equivalent
FJL6920 equivalent
fjl6820
FJL6920
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KSC5027
Abstract: power BJT KSC5345 KSE13009 KSE13007 KSE13007 equivalent BUT11 KSA1156 KSC2333 KSC2335
Text: Discrete Power BJT Switch Products VCEO V VCBO (V) VEBO (V) IC (A) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) tSTG (us) tF (us) TO-126 NPN Configuration KSC2752 400 500 7 0.5 10 20 80 0.05 - 1 2.5 1 KSC5026M 800 1100 7 1.5 20 10 40 0.1 - 2 3 0.3
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O-126
KSC2752
KSC5026M
KSA1156
O-220
KSE13006
KSE13008
KSC2333
KSC5024
KSC5027
power BJT
KSC5345
KSE13009
KSE13007
KSE13007 equivalent
BUT11
KSA1156
KSC2333
KSC2335
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thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™
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tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents
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Power247TM,
tip122 tip127 audio board
BUK 450-1000
Transistor Selection Guide
tip122 tip127 audio amp
FJL6920 equivalent
car amp
TIP41/TIP42
kse13009
TRANSISTOR TIP31
FJL6920
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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F-91742
ss8050 d 331
tip122 tip127 mosfet audio amp
KSD180
KA1M0880 application note
SS8550 D 331
dual cc BAW62
KA2S0680
ss8550 sot-23
MPSA92(KSP92) equivalent
DIODE 1N4148 LL-34
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fqa38n30
Abstract: FGA25N120 FGA15N120ANDTU FQA11N90C TO-3P package SGH80N60UFTU FQA9N90 MARKING EA MOSFET IRFP460C FGA15N120ANTU
Text: Date Created: 2/8/2004 Date Issued: 2/23/2004 PCN # 20040605 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will
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fairchildse23N60UFDTU
SGH30N60RUFDTU
SGH40N60UFDTU
SGH5N120RUFTU
SSH10N60B
SSH70N10A
TIP141LTU
TIP145TU
TIP41CPTU
FJA13009TU
fqa38n30
FGA25N120
FGA15N120ANDTU
FQA11N90C
TO-3P package
SGH80N60UFTU
FQA9N90
MARKING EA MOSFET
IRFP460C
FGA15N120ANTU
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TRANSISTOR C 557 B
Abstract: No abstract text available
Text: NPN SILICON TRANSISTOR KSC5029 HIGH VOLTAGE AND HIGH RELIABILITY T 0-3P H IG H SP EED S W IT C H IN G W ID E SO A ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Rating Unit VcBO 1100 VcEO 800 V V V A A A W "C °c Symbol Collector-Base Voltage Collector-Emitter Voltage
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KSC5029
71hmH5
TRANSISTOR C 557 B
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Untitled
Abstract: No abstract text available
Text: NPN SILICON TRANSISTOR KSC5029 HIGH VOLTAGE AND HIGH RELIABILTY • HIGH SPEED SWITCHING • WIDE SOA ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector- Base Voltage VcBO 1100 V Collector- Emitter Voltage VcEO 800 V Emitter- Base Voltage
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KSC5029
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Untitled
Abstract: No abstract text available
Text: KSC5029 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY • HIGH SPEED SW ITC HING • W ID E S O A ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic V cB O Sym bol 1100 V C ollector- E m itter Voltage V cE O 800 V Em itter- Base Voltage
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KSC5029
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KSC5029
Abstract: 5.1B1 NPN Transistor 1.5A 400V
Text: NPN SILICON TRANSISTOR KSC5029 HIGH VO LTAG E AND HIGH RELIABILTY • H IG H S P E E D S W IT C H IN G • W ID E S O A A BSOLUTE M AXIMUM RATINGS Rating Unit C o lle c to r- B a s e V o lta g e Characteristic V cB O Sym bol 110 0 V C o lle c to r- E m itte r V o lta g e
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KSC5029
133il
KSC5029
5.1B1
NPN Transistor 1.5A 400V
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Untitled
Abstract: No abstract text available
Text: KSC5029 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY H IGH S P E E D S W IT C H IN G W ID E SOA ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit Collector- Base Voltage VcBO 1100 Collector- Emitter Voltage VcEO 800 V Emitter- Base Voltage
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KSC5029
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e239
Abstract: No abstract text available
Text: NPN SILICON TRANSISTOR KSC5029 HIGH VOLTAGE AND HIGH RELIABILITY H IG H S P E E D S W IT C H IN G W ID E S O A ABSOLUTE MAXIMUM RATINGS Characteristic Symbol C ollector-Base Voltage Rating Unit V cB O 1 100 Collector-Em itter Voltage Emitter-Base Voltage C ollector C urrent DC I
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KSC5029
e239
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transistor 13003 AD
Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)
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OT-23
KST06
KST05
KSC1623
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
transistor 13003 AD
ksd-180
HF 13003
KSD180
13003 HF
KSD168
KSD966
ksd-168
PNP NPN Transistor VCEO 120V 100V Ic 7A
KSC 1.5k 250v
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ksd 180
Abstract: ksd 180/60 ksd 250 se130 tip142
Text: TRANSISTO RS FUNCTION GUIDE 2. POWER TRANSISTORS 2.1. General Purpose Transistors 2.1.1 T O -1 2 6 Type T r a n s is to rs Device Type Condition Ic VCEO A (V) NPN PNP 0.1 180 KSC2682 KSA1142 200 KSC3502 300 KSC3503 0.1 VCE 200 Condition hFE Ic Ic VcE{sat)(V)
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KSC2682
KSC3502
KSC3503
KSC3953
KSC2258
KSC2258A
KSC5036
KSC2688
KSC5035
KSC5034
ksd 180
ksd 180/60
ksd 250
se130
tip142
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ksd 168
Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
Text: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220
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KSA473
KSA539
KSA542
KSA614
KSA642
KSA643
KSA708
KSA709
KSA733
KSA812
ksd 168
KSA 1102
ksd 301
ksp13 601
KSD 105
13003 bd
KSR1107
SA1142
13003 sd
KSC5027
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D880 voltage regulator
Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5
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OT-23
KST06
KST05
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71
BCX71H
D880 voltage regulator
B0244C
TIP28C
transistor d880
VOLTAGE REGULATOR D880
D880 TRANSISTOR
TIP28
A992 transistor
E13009
ksd-180
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"transistors Vceo"
Abstract: No abstract text available
Text: TRANSISTORS FUNCTION GUIDE 2-3. Switching Transistors VcEO V 300 •c (A) Device Condition Condition hpE (NPN) VCE (V) lc (A) MIN MAX lc (A) (A) VcBSAll(V) (m S ) t, MAX <mS) to» tstg MAX MAX MAX kS ) Ib TYP Switching Time Pc Package (W) 4 KSE13004 5 2
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O-220
O-220
KSE13004
KSE13006
KSE13008
KSA1156
KSC2752
KSC2333
KSE13005
KSC2518
"transistors Vceo"
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bOE ]> • 7T b mM B 0 0 1 1 5 3 7 TRANSISTORS SfiS ■ SPIGK FUNCTION GUIDE 2-3. Switching Transistors VcEO lc Device Switching Time Condition Condition MAX <mS MAX 0‘S) ti MAX <mS) 1*»9 NPN) VCE (V) lc (A) MIN MAX lc (A) (A)
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KSE13004
O-220
KSE13006
KSE13008
KSA1156
KSC5026
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KSC5027
Abstract: KSC5028 KSC5025 KSC5026 KSC5029 LA1LA NPN Transistor 1.5A 400V
Text: SA MS U N G SEMICONDUCTOR INC 14 E D f l 7=^4142 G007Sflfl NPN SILICON TRANSISTOR KSC5024 HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Ta= 25°C Symbol - Characteristic .Collector-Base Voltage Collector-Emitter Voltage
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KSC5027
G007Sflfl
KSC5027
KSC5028
KSC5025
KSC5026
KSC5029
LA1LA
NPN Transistor 1.5A 400V
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