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    dynex igbt 1200v

    Abstract: No abstract text available
    Text: DIM800FSS12-A000 Single Switch IGBT Module Replaces DS5867-1.1 DS5867-2 November 2010 LN27709 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max)


    Original     		PDF DIM800FSS12-A000 DS5867-1 DS5867-2 LN27709) DIM800FSS12-A000 dynex igbt 1200v

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    Abstract: No abstract text available
    Text: DIM800FSS12-A000 Single Switch IGBT Module Replaces DS5867-1.1 DS5867-2 November 2010 LN27709 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max)


    Original     		PDF DIM800FSS12-A000 DS5867-1 DS5867-2 LN27709) 650names