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    Text: DIM500GDM33-TL000 Dual Switch IGBT Module DS6113-1 July 2013 LN30662 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		DIM500GDM33-TL000 DS6113-1 LN30662) PDF