LY625128SL
Abstract: LY625128 3217b
Text: LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.3 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 2.0 Rev. 2.1 Rev. 2.2 Rev. 2.3 Description Initial Issue Revised ISB1/IDR Revised Test Condition of ICC Added -45ns Spec.
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LY625128
-45ns
-35ns
11/1kage
32-pin
36-ball
44-pin
LY625128SL
LY625128
3217b
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Untitled
Abstract: No abstract text available
Text: LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.5 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 2.0 Rev. 2.1 Rev. 2.2 Rev. 2.3 Rev. 2.4 Rev. 2.5 Description Initial Issue Revised ISB1/IDR Revised Test Condition of ICC
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LY625128
-45ns
-35ns
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Untitled
Abstract: No abstract text available
Text: LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 FEATURES GENERAL DESCRIPTION Fast access time : 35/55/70ns Low power consumption: Operating current : 35/25/20mA TYP. Standby current : 5µA (TYP.) LL-version Single 4.5V ~ 5.5V power supply
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LY625128
LY625128
304-bit
35/55/70ns
35/25/20mA
32-pin
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Untitled
Abstract: No abstract text available
Text: LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.5 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Description Initial Issue Revised ISB1/IDR Revised Test Condition of ICC Added -45ns Spec. Added P-DIP PKG Revised Test Condition of ISB1/IDR
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LY625128
-45ns
LY625128
304-bit
32-pin
36-ball
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LY625128
Abstract: ly625128-70 SRAM 34 pin
Text: LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.0 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 2.0 Description Initial Issue Revised ISB1/IDR Revised Test Condition of ICC Added -45ns Spec. Added P-DIP PKG Revised Test Condition of ISB1/IDR
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LY625128
-45ns
32-pin
36-ball
44-pin
LY625128
ly625128-70
SRAM 34 pin
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LY625128SL
Abstract: No abstract text available
Text: LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.7 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 2.0 Rev. 2.1 Rev. 2.2 Rev. 2.3 Rev. 2.4 Rev. 2.5 Rev. 2.6 Rev. 2.7 Description Initial Issue Revised ISB1/IDR Revised Test Condition of ICC
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LY625128
-45ns
-35ns
LY625128GL-70LLT
LY625128GL-70LLE
LY625128GL-70LLET
LY625128GL-70LLI
LY625128GL-70LLIT
LY625128SL
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CS16LV40963
Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D
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32Kx8
LY6264
LY62L64
LY62256
LY62L256
LY62256
128Kx8
64Kx16
LY621024
LY62L1024
CS16LV40963
BS62LV4006
sram cross reference
CS18LV40963
LY6264
Hynix Cross Reference
cs18lv10245
cs18lv02560
LY621024
K6X1008C2D
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LY62256
Abstract: LY6264 LY62W51216 ly62w6416m ly62l1024 LY62W LY62 32KX8 8X13 LY621024
Text: Density Configuration Chip select Power 64K 8KX8 Dual CE Control CE#,CE2 2.7V~5.5V 256K 32KX8 Single CE Control (CE#) 2.7V~5.5V 2.7V~3.6V 2.7V~5.5V 1M 128KX8 Dual CE Control (CE#, CE2) 4.5V~5.5V 2.7V~3.6V 2.7V~5.5V Item no. LY6264 LY62256 LY62L256 LY62W256
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LY62W1024
LY62L1024
LY621024
128KX8
LY62W256
1MX16/
LY62L102516
LY62102516
1MX16
LY62256
LY6264
LY62W51216
ly62w6416m
ly62l1024
LY62W
LY62
32KX8
8X13
LY621024
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LY62W128
Abstract: No abstract text available
Text: 第 1 頁,共 3 頁 Page:1/3 Update: May 22,2015 Low Power SRAM Density 64K 256K Configuration 8K x 8 32K × 8 Chip Select Dual CE Control CE#,CE2 Single CE Control (CE#) Power Supply 2.7V~5.5V 2.7V~5.5V 4.5V~5.5V 2.7V~3.6V 128K × 8 Dual CE Control (CE#, CE2)
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LY62W2568
LY62L2568
LY62L102516
LY62W102516
LY62102616
LY62L102616
LY62L102616A
LY62L204916A
LY62L205016A
LY62W128
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