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Catalog Datasheet	MFG & Type	Document Tags	PDF
MA6X718 Abstract: MA718 Text: Schottky Barrier Diodes SBD MA6X718 (MA718) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 + 0.25 3 + 0.1 1.45 ± 0.1 4 + 0.1 0.16 − 0.06 2 0.8 + 0.2 1.9 ± 0.1 0.95 0.95 2.9 − 0.05 + 0.2 1.1 − 0.1 • Three MA3X704As in the same direction are contained in one	Original	MA6X718 MA718) MA3X704As MA6X718 MA718	PDF
MA6X718 Abstract: No abstract text available Text: Schottky Barrier Diodes SBD MA6X718 Silicon epitaxial planar type Unit : mm + 0.25 4 3 0 to 0.05 0.1 to 0.3 0.4 ± 0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) VR 30 V current* Peak forward IFM 150 mA Forward current (DC)*	Original	MA6X718 MA3X704As MA6X718	PDF
MA716 Abstract: MA3X716 panasonic ma diodes sc-59 Marking Text: Schottky Barrier Diodes SBD MA3X716 (MA716) Unit : mm + 0.2 Silicon epitaxial planar type 2.8 − 0.3 0.65 ± 0.15 1.45 0.95 1.5 1 0.95 3 + 0.1 0.4 − 0.05 + 0.2 2.9 − 0.05 For switching circuits For wave detection circuit 1.9 ± 0.2 0.65 ± 0.15 + 0.25	Original	MA3X716 MA716) O-236 SC-59 MA716 MA3X716 panasonic ma diodes sc-59 Marking	PDF
M2P diode Abstract: marking m2p M2R DIODE MINI 3PIN MA3X704D MA3X704E Text: Schottky Barrier Diodes SBD MA3X704D, MA3X704E Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 Rating Unit Reverse voltage (DC) MA3X704D/E VR 30 V Peak forward current Single IFM 150 mA Forward current (DC) Single + 0.1 0.16 − 0.06	Original	MA3X704D, MA3X704E MA3X704D/E MA3X704D O-236 SC-59 Markin02 M2P diode marking m2p M2R DIODE MINI 3PIN MA3X704E	PDF
MA4X713 Abstract: No abstract text available Text: Schottky Barrier Diodes SBD MA4X713 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 + 0.1 1.5 0.4 − 0.05 1.45 0.65 ± 0.15 + 0.25 − 0.05 0.5 0.95 1 + 0.1 3 + 0.1 0.16 − 0.06 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 Symbol Reverse voltage (DC)	Original	MA4X713 MA3X704As MA4X713	PDF
MA3X716 Abstract: No abstract text available Text: Schottky Barrier Diodes SBD MA3X716 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Symbol Peak forward current Single Forward current (DC) Single 1.45 0.95 3 + 0.1 0.16 − 0.06 0.8 + 0.2 1.1 − 0.1 Rating VR 30 V 150 mA Series 1 : Anode 1 2 : Cathode 2	Original	MA3X716 O-236 SC-59 MA3X704As MA3X716	PDF
MA4X714 Abstract: MA714 Text: Schottky Barrier Diodes SBD MA4X714 (MA714) Silicon epitaxial planar type + 0.25 Peak forward current Single Forward current (DC) Single Rating Unit VR 30 V IFM 150 mA Double* + 0.1 0.4 − 0.05 1.45 0.5 IF 30 + 0.1 0.16 − 0.06 0.6 − 0 0.2 0.8 + 0.2	Original	MA4X714 MA714) MA3X704As MA4X714 MA714	PDF
MA4X714 Abstract: marking M1P Text: Schottky Barrier Diodes SBD MA4X714 Silicon epitaxial planar type Unit : mm For switching circuits For wave detection circuit + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 + 0.1 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 Reverse voltage (DC) Peak forward current	Original	MA4X714 MA4X714 marking M1P	PDF
MA3X704D Abstract: MA3X704E MA704WA MA704WK panasonic ma diodes sc-59 Marking marking m2p panasonic "rs 466" Text: Schottky Barrier Diodes SBD MA3X704D , MA3X704E (MA704WA,MA704WK) Silicon epitaxial planar type + 0.25 Parameter Symbol Rating Unit Reverse voltage (DC) MA3X704D/E VR 30 V IFM 150 mA Forward current (DC) Single 30 Junction temperature Tj 125 °C Storage temperature	Original	MA3X704D MA3X704E MA704WA MA704WK) MA3X704D/E MA3X704D O-236 SC-59 MA3X704E MA704WK panasonic ma diodes sc-59 Marking marking m2p panasonic "rs 466"	PDF
MA4X713 Abstract: MA713 Text: Schottky Barrier Diodes SBD MA4X713 (MA713) Unit : mm Silicon epitaxial planar type + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 Symbol Peak forward current Single Forward current (DC) Single Rating VR 30 V 150 mA Double* + 0.1 + 0.1 0.16 − 0.06 0.6 − 0	Original	MA4X713 MA713) MA3X704As MA4X713 MA713	PDF