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MACOM MA4AGBLP912 RF DIODE PIN 50V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MA4AGBLP912	Tray	1,700		100	1 - 10 - 100 $5.5045 1000 $5.4625 10000 $5.4625	Buy Now
Mouser Electronics	MA4AGBLP912		1,000			1 - 10 - 100 $7.5 1000 $5.95 10000 $5.95	Buy Now
Richardson RFPD	MA4AGBLP912				500	1 - 10 - 100 - 1000 $4.76 10000 $4.76	Buy Now

MA4AGBLP912 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MA4AGBLP912		M/A-COM	RF Switches, RF/IF and RFID, ALGAAS,BEAM LEAD,PIN,DIODE		Original	PDF
MA4AGBLP912		Tyco Electronics	AlGaAs Beam Lead PIN Diode		Original	PDF

MA4AGBLP912 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MA4AGBLP912 Abstract: No abstract text available Text: MA4AGBLP912 AlGaAs Beamlead PIN Diode V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ Topside Low Series Resistance Low Capacitance 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant	Original	PDF	MA4AGBLP912 MA4AGBLP912
beam lead PIN diode Abstract: No abstract text available Text: MA4AGBLP912 AlGaAs M/A-COM Products Rev. 2 RoHS Compliant Beamlead PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL	Original	PDF	MA4AGBLP912 MA4AGBLP912 beam lead PIN diode
MA4AGBLP912 Abstract: beam lead PIN diode Microwave PIN diode MA4AGBLP912 v3 diode AF103 Text: MA4AGBLP912 AlGaAs Beamlead PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ V3 MA4AGBLP912 Low Series Resistance Low Capacitance Millimeter Wave Switching Millimeter Wave Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL	Original	PDF	MA4AGBLP912 MA4AGBLP912 beam lead PIN diode Microwave PIN diode MA4AGBLP912 v3 diode AF103
Untitled Abstract: No abstract text available Text: MA4AGBLP912 AlGaAs Beamlead PIN Diode V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ Topside Low Series Resistance Low Capacitance 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant	Original	PDF	MA4AGBLP912 MA4AGBLP912
W-band diode Abstract: MA4AGBPL912 Microwave PIN diode MA4AGBLP912 beam lead pin diode MA4AGBLP912 M541 W-band PIN diode SPICE model pin diode model spice Text: MA4AGBLP912 AlGaAs Beam Lead PIN Diode Features n n n n n n n V 1.00 Outline Topview Ultra Low Capacitance < 22 fF Excellent RC Product < 0.10 pS High Switching Cutoff Frequency > 110 GHz 5 Nanosecond Switching Speed Driven by Standard +5 V TTL PIN Diode Driver	Original	PDF	MA4AGBLP912 MA4AGBLP912 pa300 MA4AGBPL912 0E-14 W-band diode Microwave PIN diode MA4AGBLP912 beam lead pin diode M541 W-band PIN diode SPICE model pin diode model spice
MA4AGBLP912 Abstract: PIN diodes 10GHZ Text: MA4AGBLP912 AlGaAs Beamlead PIN Diode RoHS Compliant Features • •       Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL	Original	PDF	MA4AGBLP912 MA4AGBLP912 PIN diodes 10GHZ
MA4AGBLP912 Abstract: AF103 Microwave PIN diode MA4AGBLP912 beam lead pin diode M541 W-band diode 10ghz pin diode Text: MA4AGBLP912 AlGaAs Beamlead PIN Diode RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL Silicon Nitride Passivation	Original	PDF	MA4AGBLP912 MA4AGBLP912 AF103 Microwave PIN diode MA4AGBLP912 beam lead pin diode M541 W-band diode 10ghz pin diode
IS10E Abstract: Microwave PIN diode MA4AGBLP912 MA4AGBLP912 MA4AGBPL912 Text: MA4AGBLP912 AlGaAs M/A-COM Products Rev. 2 RoHS Compliant Beamlead PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL	Original	PDF	MA4AGBLP912 MA4AGBLP912 IS10E Microwave PIN diode MA4AGBLP912 MA4AGBPL912
smr-3822 Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM	Original	PDF	Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
PH1819-60 Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies	Original	PDF
MAAM-008863 Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer Text: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America	Original	PDF	40W267 MAAM-008863 MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer