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    MB85R1001A Price and Stock

    KAGA FEI America Inc MB85R1001ANC-GE1

    IC FRAM 1MBIT PARALLEL 48TSOP
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    DigiKey MB85R1001ANC-GE1 Tray 1,998 1
    • 1 $11.15
    • 10 $9.893
    • 100 $9.206
    • 1000 $8.06221
    • 10000 $7.77572
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    Mouser Electronics MB85R1001ANC-GE1 734
    • 1 $10.31
    • 10 $9.55
    • 100 $8.18
    • 1000 $7.68
    • 10000 $7.43
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    FUJITSU Limited MB85R1001ANC-GE1

    Fram, 1M, Parallel, 3V, 48Tsop; Memory Type:Fram; Memory Size:1Mbit; Nvram Memory Configuration:128K X 8Bit; Ic Interface Type:Parallel; Access Time:100Ns; Memory Case Style:Tsop; No. Of Pins:48Pins; Supply Voltage Min:3V; Supply Rohs Compliant: Yes |Fujitsu MB85R1001ANC-GE1
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    Newark MB85R1001ANC-GE1 Bulk 1
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    RAMXEED MB85R1001APFCN

    1Mbit FRAM x8 parallel TSOP48
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    Symmetry Electronics MB85R1001APFCN 1
    • 1 $11.08
    • 10 $11.08
    • 100 $11.08
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    RAMXEED MB85R1001ANC-GE1

    1Mbit FRAM (128k x8) parallel interface - TSOP48 tray
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    Symmetry Electronics MB85R1001ANC-GE1 1
    • 1 $7.65
    • 10 $7.65
    • 100 $7.65
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    MB85R1001A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB85R1001ANC-GE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 1MBIT 150NS 48TSOP Original PDF

    MB85R1001A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-2v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS


    Original
    PDF DS501-00003-2v0-E MB85R1001A MB85R1001A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-0v01-E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process


    Original
    PDF DS501-00003-0v01-E MB85R1001A MB85R1001A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-4v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS


    Original
    PDF DS501-00003-4v0-E MB85R1001A MB85R1001A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00005-3v0-E FRAM MB85R1001A MB85R1001A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


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    PDF NP501-00005-3v0-E MB85R1001A MB85R1001A FPT-48P-M48)

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K  8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words  8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS


    Original
    PDF DS501-00003-3v0-E MB85R1001A MB85R1001A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K  8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words  8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS


    Original
    PDF DS501-00003-3v0-E MB85R1001A MB85R1001A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-1v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS


    Original
    PDF DS501-00003-1v0-E MB85R1001A MB85R1001A