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    MDD1752 Price and Stock

    IXYS Corporation MDD175-28N1

    DIODE MODULE GP 2800V 240A Y1-CU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MDD175-28N1 Box 3
    • 1 -
    • 10 $225.93
    • 100 $225.93
    • 1000 $225.93
    • 10000 $225.93
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    Mouser Electronics MDD175-28N1
    • 1 -
    • 10 $225.93
    • 100 $225.92
    • 1000 $225.92
    • 10000 $225.92
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    TTI MDD175-28N1 Box 3
    • 1 -
    • 10 $225.93
    • 100 $225.93
    • 1000 $225.93
    • 10000 $225.93
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    New Advantage Corporation MDD175-28N1 78 1
    • 1 $507.88
    • 10 $507.88
    • 100 $474.02
    • 1000 $474.02
    • 10000 $474.02
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    Littelfuse Inc MDD175-28N1

    Bipolar Module - Diode Y1-Cu/ Box |Littelfuse MDD175-28N1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MDD175-28N1 Bulk 3
    • 1 $258.47
    • 10 $251.24
    • 100 $236.78
    • 1000 $236.78
    • 10000 $236.78
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    IXYS Integrated Circuits Division MDD175-28N1

    DIODE MODULE 2x240A 2800V DUAL IXYS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik MDD175-28N1 98
    • 1 $375.87573
    • 10 $357.9769
    • 100 $357.9769
    • 1000 $357.9769
    • 10000 $357.9769
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    MDD1752 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MDD175-28N1 IXYS Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE DUAL 2800V 240A Original PDF

    MDD1752 Datasheets Context Search

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    MDD1752

    Abstract: MDD1752RH MDD*1752 40V 14A DPAK n-channel mosfet vgs 3v MAGNACHIP Z 8.0m 40V50A trench mosfet 40V, 50A n mosfet
    Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDD1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability


    Original     		PDF MDD1752 MDD1752­ MDD1752RH MDD*1752 40V 14A DPAK n-channel mosfet vgs 3v MAGNACHIP Z 8.0m 40V50A trench mosfet 40V, 50A n mosfet

    Untitled

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice N-Channel Trench MOSFET 40V, 50A, 8.5mΩ General Description Features The MDD1752 uses advanced Magnachip’s MOSFET Technology, which provide low onstate resistance, high switching performance and excellent reliability


    Original     		PDF MDD1752 MDD1752â

    MDD1752

    Abstract: MDD*1752 trench mosfet MDD1752R MAGNACHIP
    Text: N-Channel Trench MOSFET 40V, 50A,8.0mΩ General Description Features The MDD1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state


    Original     		PDF MDD1752 MDD1752­ MDD*1752 trench mosfet MDD1752R MAGNACHIP

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    Untitled

    Abstract: No abstract text available
    Text: MDD175-28N1 High Voltage Standard Rectifier Module VRRM = 2x 2800 V I FAV = 240 A VF = 1.01 V Phase leg Part number MDD175-28N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current


    Original     		PDF MDD175-28N1 60747and 20130813g