MG150Q2YS50 Search Results

MG150Q2YS50 Price and Stock

Filter by Manufacturer


Toshiba America Electronic Components MG150Q2YS50 TRANSISTOR,IGBT POWER MODULE,3-PH BRIDGE,1.2KV V(BR)CES,200A I(C)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MG150Q2YS50		2			1 $97.5 10 $97.5 100 $97.5 1000 $97.5 10000 $97.5	Buy Now

MG150Q2YS50 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG150Q2YS50		Toshiba	N channel IGBT		Original	PDF
MG150Q2YS50		Toshiba	TRANS IGBT MODULE N-CH 1200V 200A 7(2-95A4A)		Original	PDF
MG150Q2YS50		Toshiba	GTR Module Silicon N Channel IGBT		Scan	PDF
MG150Q2YS50		Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)		Scan	PDF
MG150Q2YS50		Toshiba	Field Effect Transistor Silicon N-Channel MOS Type		Scan	PDF

MG150Q2YS50 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IGBT MG150Q2YS50 Abstract: MG150Q2YS50 Text: MG150Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max)	Original	MG150Q2YS50 2-95A4A 30transportation IGBT MG150Q2YS50 MG150Q2YS50	PDF
IGBT MG150Q2YS50 Abstract: Mg150q2ys50 Text: MG150Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode	Original	MG150Q2YS50 2-95A4A IGBT MG150Q2YS50 Mg150q2ys50	PDF
GT30J322 Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬	Original	MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A MG150Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage	OCR Scan	MG150Q2YS50 50Q2YS50 TjS125Â	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MG150Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)	OCR Scan	MG150Q2YS50 TjS125	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A MG150Q2YS50 MG150Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load • Low Saturation Voltage • V c e (sat) —3.6V (Max.)	OCR Scan	MG150Q2YS50	PDF
150Q2YS50 Abstract: MG150Q2YS50 Text: T O S H IB A MG150Q2YS50 MG1 50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)	OCR Scan	MG150Q2YS50 150Q2YS50 2-95A4A 150Q2YS50 MG150Q2YS50	PDF
MG200J2YS50 Abstract: 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 mg200q2ys50 Text: MHTEPTEKC www.i-t.su [email protected] Ten: 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i T o s h i b a fln a n a 3 0 H p a 6 o H nxT eM ne paT yp np0M3B0AMTenb Kofl: Uce lc Icm :o t -4 0 °C a o + 1 2 5 °C : T o s h ib a Ucesat npH lc Tr(typ.j Tf(typ.)	OCR Scan	flnana30H ot-40Â MG200Q1US41 2-109A4A MG300Q1US41 MG300Q1US51 2-109F1A MG400Q1US41 MG200J2YS50 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG400J2YS50 mg200q2ys50	PDF
IGBT 200A 1200V Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D	OCR Scan	bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40	PDF
toshiba P Abstract: 50Q2YS50 Text: TOSHIBA M G I 50Q2YS5Q TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG 150Q2YS50 HIGH P O W E R SWITCHING APPLICATIONS U nit in mm M O TO R CONTROL APPLICATIONS 4 -FA ST -O N -T A B # 110 • • H igh Input Impedance High Speed : tf=0.3,us M ax. @ Inductive Load	OCR Scan	50Q2YS5Q 150Q2YS50 2-95A4A MG15QQ2YS50 toshiba P 50Q2YS50	PDF