MG75J1ZS40 Search Results

MG75J1ZS40 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG75J1ZS40		Toshiba	Silicon N-channel IGBT GTR module for high power switching, motor control applications		Original	PDF

MG75J1ZS40 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
diode 083 Abstract: MG75J1ZS40 Text: MG75J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS40 Unit: mm High Power Switching Applications Motor Control Applications High input impedance High speed : tf = 0.35µs Max trr = 0.15µs (Max) Low saturation voltage : VCE (sat) = 3.5V (Max) Enhancement-mode	Original	PDF	MG75J1ZS40 2-94D2A diode 083 MG75J1ZS40
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	PDF	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
mg75n2ys40 Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上げます。廃止品種 1 形名 02BZ2.2~4.7 代替品種	Original	PDF	02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
mg75n2ys40 Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	PDF	050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Untitled Abstract: No abstract text available Text: MG75J1ZS40 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Mr;7SM7<;An • v ■ 'w m wmr v ■ v ■ w Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf=0.35^/s Max. trr = 0.15^8 (Max.)	OCR Scan	PDF	MG75J1ZS40
MG75J1ZS40 Abstract: ZS40 Text: TOSHIBA MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35,«s Max. trr = 0.15/^ (Max.) Low Saturation Voltage	OCR Scan	PDF	MG75J1ZS40 MG75J1 2-94D2A MG75J1ZS40 ZS40
Untitled Abstract: No abstract text available Text: T O SH IB A MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35/«s Max. trr = 0.15/^s (Max.) Low Saturation Voltage	OCR Scan	PDF	MG75J1ZS40 MG75J1
Untitled Abstract: No abstract text available Text: MG75J1ZS40 TO SHIBA M G 7 5 J 1 ZS 4 0 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH PO W ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • U nit in mm 2 -F A S T -O N -T A B #110 • High Input Impedance High Speed : tf=0.35/<s Max.	OCR Scan	PDF	MG75J1ZS40 2-94D2A
Untitled Abstract: No abstract text available Text: T O SH IB A MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35/«s Max. trr = 0.15/^s (Max.) Low Saturation Voltage	OCR Scan	PDF	MG75J1ZS40 MG75J1 2-94D2A
S5J53 Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753 Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction	OCR Scan	PDF	200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
GT250101 Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9 Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a	OCR Scan	PDF	2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
G50Q2YS40 Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101	OCR Scan	PDF	GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
MG150N2YS40 Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40 Text: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11	OCR Scan	PDF	T8J101* T8J102 T15J101* T15J102* GT15J103 T25J101* MG25J1BS11 T50J101* T60J101* 80J101* MG150N2YS40 MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40