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    MGFC39 Price and Stock

    Mitsubishi Electric MGFC39V7785A-56

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    Bristol Electronics MGFC39V7785A-56 54
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    Mitsubishi Electric MGFC39V6472A-56

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    Bristol Electronics MGFC39V6472A-56 10
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    Mitsubishi Electric MGFC39V5964A-61

    C BAND, GAAS, N-CHANNEL, RF POWER, JFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC39V5964A-61 101
    • 1 $39
    • 10 $39
    • 100 $34.5
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    Mitsubishi Electric MGFC39V7177A-56

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC39V7177A-56 42
    • 1 $139.1528
    • 10 $118.2799
    • 100 $111.3222
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    Mitsubishi Electric MGFC39V7177-01

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC39V7177-01 4
    • 1 $220.5
    • 10 $220.5
    • 100 $220.5
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    MGFC39 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC39V3436 Mitsubishi 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC39V3436 Mitsubishi 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC39V3436A Mitsubishi 3.4-3.6 GHz band 4W internally matched GaAs FET Original PDF
    MGFC39V3742 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC39V3742 Unknown FET Data Book Scan PDF
    MGFC39V3742A Mitsubishi 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC39V3742A Mitsubishi 3.7-4.2 BAND 8W Internally Matched GaAs FET Scan PDF
    MGFC39V4450 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC39V4450 Unknown FET Data Book Scan PDF
    MGFC39V4450A Mitsubishi 4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC39V4450A Mitsubishi 4.4-5.0 GHz Band 8W Internally Matched GaAs FET Scan PDF
    MGFC39V5053 Mitsubishi FET, ID 7.5 A Scan PDF
    MGFC39V5258 Mitsubishi 5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC39V5258 Mitsubishi 5.2-5.8 GHz BAND 8W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC39V5258 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC39V5258 Unknown FET Data Book Scan PDF
    MGFC39V5258A Mitsubishi 5.2-5.8 GHz band 8W internally matched GaAs FET Scan PDF
    MGFC39V5867 Mitsubishi Scan PDF
    MGFC39V5964 Mitsubishi 5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC39V5964 Unknown High Frequency Device Data Book (Japanese) Scan PDF

    MGFC39 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFC39V5964A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5964A 5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V5964A MGFC39V5964A 28dBm 10MHz June/2004

    MGFC39V5867

    Abstract: No abstract text available
    Text: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5867 5.8 ~ 6.75GHz BAND 8W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		PDF June/2004 MGFC39V5867 75GHz MGFC39V5867

    MGFC39V3436

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V3436 MGFC39V3436 28dBm Oct-03

    MGFC39V3742A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3742A 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V3742A MGFC39V3742A 28dBm 10MHz

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V4450A 4.4 – 5.0 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V4450A MGFC39V4450A -45dBc 28dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V3436 MGFC39V3436 -45dBc 28dBm

    MGFC39V7177A

    Abstract: 71F71
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V7177A MGFC39V7177A 28dBm 10MHz June/2004 71F71

    MGFC39V7785A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V7785A MGFC39V7785A 28dBm 10MHz

    MGFC39V6472A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V6472A 6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.


    Original     		PDF MGFC39V6472A MGFC39V6472A 28dBm 10MHz June/2004

    GF-8

    Abstract: MGFC39V3436
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3436 is an internally impedance-matched OUTLINE DRAWING GaAs power FET especially designed for use in 3.4 - 3.6 Unit : millimeters GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V3436 MGFC39V3436 18-Sep- GF-8

    MGFC39V4450A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V4450A 4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V4450A MGFC39V4450A 28dBm 10MHz

    MGFC39V6472A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V6472A 6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V6472A MGFC39V6472A 28dBm 10MHz

    mitsubishi

    Abstract: 5.8GHz MGFC39V5258
    Text: MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5258 5.2 ~ 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGFC39V5258 mitsubishi 5.8GHz MGFC39V5258

    MGFC39V3436

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V3436 MGFC39V3436 28dBm June/2004

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V6472A 6.4 – 7.2 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V6472A MGFC39V6472A -45dBc 28dBm

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39 V 7785A e h « "* r\f! No««* " ' ”mew clW s=^<>8ton’ 7 .7 — 8 .5 G H z BAND 8 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 3 9 V 7 7 8 5 A is a n in te rn a lly im p e d a n c e -m a t c h e d


    OCR Scan     		PDF MGFC39

    fet 544 a

    Abstract: MGFC39V6471
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V6471 , o t p ,o d u c « 0 " u 6 . 4 - 7 .2 G H z BAND 8 W IN TERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V6471 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF 39V6471 MGFC39V6471 fet 544 a

    MGFC39V5867

    Abstract: 68 0063
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5867 5.8~6.75GHz BAND 8W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC39V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGFC39V5867 75GHz MGFC39V5867 39dBm RG-50 Ta-25deg 68 0063

    049 MAKING

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFC39V3436 MGFC39V3436 -45dBc 28dBm 25deg 18-Sep- 049 MAKING

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC39V7177A • tftwW gxs Wifi Si>n'K 7 .1 — 7.7GHz BAND 8W INTERNALLY M ATCH ED GaAs F E T DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7 .1 —7.7 GHz band amplifiers* The hermetically sealed metal-ceramic


    OCR Scan     		PDF FC39V7177A MGFC39V7177A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785 7.7 ~ 8 .5 G H z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit, millimeters inches The M G F C 3 9 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.7 ~ 8.5


    OCR Scan     		PDF MGFC39V7785 27C102P, RV-15

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M 6FC39V 7177 7.1~ 7.7GH z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177 is an internally impedance-matched GaAs power F E T especially designed for use in 7.1 ~ 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF 6FC39V MGFC39V7177 Item-01: Item-51: 27C102P, RV-15 16-BIT)

    mgfc39v5964

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964 6 .4 G H z BAND 8W IN T E R N A L L Y M A TCH ED GaAs F E T DESCRIPTION The MGFC39V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF GFC39V5964 MGFC39V5964

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177 7 .1 —7.7GHZ BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 1 7 7 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.1 ~ 7.7 G H z band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF MGFC39V7177