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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V778S 7 .7 — 8 .5G H z BAND 16W INTERNALLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 2 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 — 8 .5 GHz band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		MGFC42V778S PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V778S 7 .7 —8.5GÜZ BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The M GFC42V7785 is an internally impedance-matched GaAs power F E T especially designed for use in 7 .7 - 8 .5 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		MGFC42V778S GFC42V7785 27C102P, RV-15 16-BIT) PDF

    mgfc30

    Abstract: MGFC39V5964A
    Text: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10


    OCR Scan     		MGFC36V3742 FC36V3742A GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 mgfc30 MGFC39V5964A PDF