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    MGFC5211 Search Results

    MGFC5211 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC5211 Mitsubishi K-Band 2-Stage Power Amplifier Original PDF

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    340 mmic

    Abstract: MGFC5211
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 Notice : This is not a final specification Some parametric limits are subject to change. K-Band 2-Stage Power Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High


    Original     		PDF MGFC5211 MGFC5211 340 mmic

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGFC5211 K-Band 2-Stage Power Amplifier Target Specifications ELECTRICAL CHARACTERISTICS Ta=25 Degree C. Symbol IDSS1 IDSS2 Vp1 Vp2 Parameter Test Conditions Drain Saturation Current Vd=3.0V Drain Saturation Current Pinch Off Voltage


    Original     		PDF MGFC5211 180mA* 20dBm Ids211

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High


    OCR Scan     		PDF MGFC5211 MGFC5211