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Abstract: No abstract text available
Text: Document Number: MHW9187N Rev. 5, 4/2006 Freescale Semiconductor Technical Data MHW9187N Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • GaAs FET Transistor Technology
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MHW9187 Gallium Arsenide CATV Amplifier Module LIFETIME BUY Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • GaAs FET Transistor Technology
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Abstract: No abstract text available
Text: MOTOROLA Order this document by MHW9187/D SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide 870 MHz CATV Amplifier MHW9187 High Output Power Doubler • • • • Designed for Maximum Output Capability Under Tilted Output Levels Specified for 79–, 112– and 132–Channel Performance
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Abstract: No abstract text available
Text: MHW9187 Rev. 3, 1/2006 Freescale Semiconductor Technical Data Will be replaced by MHW9187N by end of Q206. N suffix indicates RoHS compliant part. MHW9187 Gallium Arsenide CATV Amplifier Module Features • Specified for 79–, 112– and 132–Channel Loading
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CTB112
Abstract: CTB132 MHW9187 MHW9187N XMD112 XMD132
Text: Freescale Semiconductor Technical Data Document Number: MHW9187N Rev. 5, 4/2006 Gallium Arsenide CATV Amplifier Module MHW9187N Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability
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Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Amplifier Module MHW9187 Features • • • • • Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability GaAs FET Transistor Technology
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Text: Document Number: MHW9187 Rev. 4, 4/2006 Freescale Semiconductor Technical Data Replaced by MHW9187N. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. MHW9187 Features • Specified for 79 - , 112 - and 132 - Channel Loading
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Text: Freescale Semiconductor Technical Data MHW9187 Rev. 2, 10/2002 Gallium Arsenide CATV Amplifier Module MHW9187 Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • GaAs FET Transistor Technology
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Text: MOTOROLA Order this document by MHW9187/D SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide 870 MHz CATV Amplifier MHW9187 High Output Power Doubler • • • • Designed for Maximum Output Capability Under Tilted Output Levels Specified for 79–, 112– and 132–Channel Performance
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CTB112
Abstract: CTB132 MHW9187 XMD112 XMD132
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHW9187/D SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Amplifier Module MHW9187 Features • • • • • Specified for 79–, 112– and 132–Channel Loading Excellent Distortion Performance
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CTB112
Abstract: CTB132 MHW9187 MHW9187N XMD112 XMD132
Text: Freescale Semiconductor Technical Data Document Number: MHW9187N Rev. 5, 4/2006 MHW9187N Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • GaAs FET Transistor Technology
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Abstract: XMD112 XMD132 CTB112 CTB132 motorola rf power module
Text: MOTOROLA Order this document by MHW9187/D SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Amplifier Module MHW9187 Features • • • • • Specified for 79–, 112– and 132–Channel Loading Excellent Distortion Performance Higher Output Capability
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Abstract: CTB132 MHW9187 MHW9187N XMD112 XMD132
Text: Freescale Semiconductor Technical Data Gallium Arsenide CATV Amplifier Module MHW9187N LIFETIME BUY Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • GaAs FET Transistor Technology
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Abstract: CTB112 CTB132 MHW9187N XMD112 XMD132
Text: Freescale Semiconductor Technical Data Document Number: MHW9187 Rev. 4, 4/2006 Replaced by MHW9187N. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. MHW9187 Features • Specified for 79 - , 112 - and 132 - Channel Loading
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Motorola transistor smd marking codes
Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.
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uaf4000
Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに
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20GHz
uaf4000
toshiba smd marking code transistor
smd code marking wl sot23
RF LNB C band chipset
M74 marking
BFG480W
SMD transistor n36
vHF amplifier module 2450Mhz
TOSHIBA DIODE CATALOG
DIODE RF DETECTOR
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MHW1345
Abstract: catv amplifier Amplifier Modules motorola MHW7185CL FUJI GaAs FET CATV amplifier module transistor HATTELAND mhw6342t 85690 TRANSISTOR C 6090
Text: Device Data Book CATV DISTRIBUTION AMPLIFIER MODULE DEVICE DATA DL209/D Rev. 0 10/2002 CATV Distribution Amplifier Module Device Data Table of Contents Page Foreword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii Data Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . iii
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MHW1345
catv amplifier
Amplifier Modules motorola
MHW7185CL
FUJI GaAs FET
CATV amplifier module transistor
HATTELAND
mhw6342t
85690
TRANSISTOR C 6090
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tcxo philips 4322
Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The
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BFG591 amplifier
Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一,展示了我们恩智浦半导体 (NXP
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TFF11101HN
BFG591 amplifier
5.8GHz Analog RF mmic
MRF6Vp3450
nxp Standard Marking BLF6G21-10G
FET 2N5459
RF LNB C band chipset
radar 77 ghz sige
82 sot363-6
Dect antenna
smd code marking ft sot23
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S520077-77Z
Abstract: CXE-2089 CXE-2022 Freescale Semiconductor hybrid amplifier modules sdars radio tuner CGA-7718 CXE1089 S8740240P12 S8740260GT cga motorola
Text: 2008 Broadband CATV Transmission Product Selection Guide RFMD Broadband CATV Transmission Product Selection Guide With the market’s proliferation of triple-play application within next-generation CATV hybrid fiber products voice, video and data and quad-play
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CXE-2089
CXE-2022
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sdars radio tuner
CGA-7718
CXE1089
S8740240P12
S8740260GT
cga motorola
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RF1119
Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
Text: RFݠ11⠜ RFѻકⱘᑨ⫼䆒䅵ݠ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,
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PMBFJ308
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PMBFJ310
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PRF947
PRF949
PRF957
TFF1000HN
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RF1119
TZA3036
lnb ku
UAA 1006
BF862 AM LNA
BFG480W
ic lnb
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2SK43 transistor
Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written
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Audio Power Amplifier MOSFET TOSHIBA
Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows
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Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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