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SOT233 Abstract: ISS390 mi3402 Text: MI3402 N-Channel 30 V D-S MOSFET Features General Description V DS (V) = 30V This miniature surface monut MOSFET uses I D (A) = 4.5A (V GS = 10V) advanced trench process , low R DS(on) assures minimal power loss and energy conversion , which makes this device ideal for use in power	Original	MI3402 MI3402 O-236. OT233-071012 SOT233 ISS390	PDF

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SOT233

Abstract: ISS390 mi3402
Text: MI3402 N-Channel 30 V D-S MOSFET Features General Description V DS (V) = 30V This miniature surface monut MOSFET uses I D (A) = 4.5A (V GS = 10V) advanced trench process , low R DS(on) assures minimal power loss and energy conversion , which makes this device ideal for use in power

Original

MI3402 MI3402 O-236. OT233-071012 SOT233 ISS390

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