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    NXP Semiconductors MRF6S23140HR3

    RF MOSFET LDMOS 28V NI880H
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    Rochester Electronics LLC MRF6S23140HR3

    RF MOSFET LDMOS 28V NI880H
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    DigiKey MRF6S23140HR3 Bulk 3
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    Freescale Semiconductor MRF6S23140HR3

    RF S Band, N-Channel Power MOSFET
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    Rochester Electronics MRF6S23140HR3 1,157 1
    • 1 $105.88
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    MRF6S23140HR3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF6S23140HR3 Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    MRF6S23140HR3 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to


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    PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3

    nippon capacitors

    Abstract: MRF6S23140H j727
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to


    Original
    PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140H nippon capacitors j727

    J673

    Abstract: J701 nippon capacitors 465B A114 A115 C101 JESD22 MRF6S23140HR3 MRF6S23140HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to


    Original
    PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3 J673 J701 nippon capacitors 465B A114 A115 C101 JESD22 MRF6S23140HSR3

    nippon capacitors

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 0, 1/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies


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    PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140H nippon capacitors

    465B

    Abstract: A114 A115 C101 JESD22 MRF6S23140HR3 MRF6S23140HSR3 J733
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to


    Original
    PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3 465B A114 A115 C101 JESD22 MRF6S23140HSR3 J733

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


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    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


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