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NXP Semiconductors MRF9030LR1 RF MOSFET LDMOS 26V NI360
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NXP Semiconductors MRF9030NR1 RF MOSFET LDMOS 26V TO270-2
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NXP Semiconductors MRF9030LR5 RF MOSFET LDMOS 26V NI360
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DigiKey	MRF9030LR5	Reel			50	1 - 10 - 100 $34.9823 1000 $33.84788 10000 $33.84788	Buy Now
Rochester Electronics LLC MRF9030GMR1 RF MOSFET TO270
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DigiKey	MRF9030GMR1	Bulk			14	1 - 10 - 100 $22.6 1000 $22.6 10000 $22.6	Buy Now
Rochester Electronics LLC MRF9030GNR1 RF MOSFET LDMOS TO270-2
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DigiKey	MRF9030GNR1	Bulk			13	1 - 10 - 100 $23.69 1000 $23.69 10000 $23.69	Buy Now

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MRF9030 Datasheets (23)

Part	Manufacturer	Description	Datasheet Type	PDF
MRF9030	Freescale Semiconductor	MRF9030LR1, MRF9030LSR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs	Original	PDF
MRF9030	Motorola	RF POWER FIELD EFFECT TRANSISTORS	Original	PDF
MRF9030LR1	Freescale Semiconductor	30W RF PWR FET NI-360L	Original	PDF
MRF9030LR1	Freescale Semiconductor	945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET	Original	PDF
MRF9030LSR1	Freescale Semiconductor	945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET	Original	PDF
MRF9030LSR1	Freescale Semiconductor	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET	Original	PDF
MRF9030LSR1	Motorola	RF Power Field Effect Transistor	Original	PDF
MRF9030LSR5	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-360S	Original	PDF
MRF9030M	Freescale Semiconductor	MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs	Original	PDF
MRF9030MBR1	Freescale Semiconductor	RF POWER FET 30W 1 GHZ	Original	PDF
MRF9030MBR1	Freescale Semiconductor	945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET	Original	PDF
MRF9030MBR1	Motorola	RF Power Field Effect Transistor	Original	PDF
MRF9030MBR1	Motorola	945 MHz, 30 W, 26 V, LATERAL N-CHANNEL, BROADBAND, RF POWER MOSFETs	Original	PDF
MRF9030MR1	Freescale Semiconductor	PLASTIC LDMOS RF PWR AMP	Original	PDF

MRF9030MR1	Freescale Semiconductor	945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET	Original	PDF
MRF9030MR1	Motorola	RF Power Field Effect Transistor	Original	PDF
MRF9030MR1	Motorola	945 MHz, 30 W, 26 V, LATERAL N-CHANNEL, BROADBAND, RF POWER MOSFETs	Original	PDF
MRF9030NBR1	Freescale Semiconductor	RF Power Field Effect Transistors	Original	PDF
MRF9030NR1	Freescale Semiconductor	RF Power Field Effect Transistors	Original	PDF
MRF9030NR1	Freescale Semiconductor	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET	Original	PDF

MRF9030 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MRF9030MBR1 Abstract: MRF9030MR1 100B7R5JP Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 100B7R5JP	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors	Original	MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1	PDF
MRF9030 Abstract: MRF9030LSR1 MRF9030R1 Text: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030/D MRF9030R1 MRF9030LSR1 MRF9030R1 MRF9030 MRF9030LSR1	PDF
MRF9030MBR1 Abstract: MRF9030MR1 Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 DEVICEMRF9030M/D MRF9030MBR1	PDF
44F3360 Abstract: 93F2975 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030MBR1) MRF9030MR1 MRF9030MBR1 44F3360 93F2975	PDF
MRF9030N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts	Original	MRF9030N MRF9030NBR1 MRF9030N	PDF
MRF9030L Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9030 Rev. 6, 4/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9030 MRF9030LR1 MRF9030LSR1 MRF9030L	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030/D MRF9030 MRF9030S MRF9030SR1 MRF9030/D	PDF
MRF9030N Abstract: 945 TRANSISTOR A113 ATC100B470JT500XT MRF9030NBR1 MRF9030NR1 T491D106K035AT mrf9030n stability Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9030N MRF9030NR1 MRF9030N 945 TRANSISTOR A113 ATC100B470JT500XT MRF9030NBR1 MRF9030NR1 T491D106K035AT mrf9030n stability	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	Charact192 MRF9030LR1 MRF9030LSR1	PDF
MRF9030NR1 Abstract: marking z17 100B470JP Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9030MBR1) MRF9030NR1 MRF9030MR1 MRF9030MBR1 marking z17 100B470JP	PDF
VIPer 32 Abstract: MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 MRF9030MR1 marking z17 Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors	Original	MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1 VIPer 32 MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 marking z17	PDF
945 TRANSISTOR Abstract: marking us capacitor pf l1 EB212 MRF9030 MRF9030LR1 marking amplifier j02 Text: Freescale Semiconductor Technical Data Document Number: MRF9030 Rev. 8, 9/2008 RF Power Field Effect Transistor MRF9030LR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9030 MRF9030LR1 945 TRANSISTOR marking us capacitor pf l1 EB212 MRF9030 MRF9030LR1 marking amplifier j02	PDF
MRF9030MBR1 Abstract: MRF9030MR1 TO-270-2 Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor, Inc.	Original	MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 TO-270-2	PDF

Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030M/D MRF9030MR1 MRF9030MBR1	PDF
MRF9030N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9030N MRF9030NR1 MRF9030N	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF9030 Rev. 8, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9030 MRF9030LR1	PDF
MRF9030L Abstract: motorola MOSFET 935 MRF9030 MRF9030LR1 MRF9030LSR1 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030/D MRF9030LR1 MRF9030LSR1 MRF9030LR1 MRF9030L motorola MOSFET 935 MRF9030 MRF9030LSR1	PDF
transistor d 945 Abstract: 945 TRANSISTOR MRF9030 MRF9030LSR1 9450 transistor 945 mosfet n Text: Freescale Semiconductor Technical Data Document Number: MRF9030 Rev. 7, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET ARCHIVE INFORMATION • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP	Original	MRF9030 MRF9030LSR1 transistor d 945 945 TRANSISTOR MRF9030 MRF9030LSR1 9450 transistor 945 mosfet n	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030/D MRF9030LR1 MRF9030LSR1 MRF9030/D	PDF
TO-270-2 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9030M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9030M MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 TO-270-2	PDF
Untitled Abstract: No abstract text available Text: MRF9030 Rev. 5, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9030 MRF9030LR1 MRF9030LSR1	PDF
VIPer 32 Abstract: TO272 Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030M/D MRF9030MR1 MRF9030MBR1 VIPer 32 TO272	PDF
mrf9030 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030/D MRF9030 MRF9030S MRF9030SR1	PDF

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NXP Semiconductors MRF9030LR1

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MRF9030 Datasheets (23)

MRF9030 Datasheets Context Search

MRF9030MBR1

Untitled

MRF9030

MRF9030MBR1

44F3360

MRF9030N

MRF9030L

Untitled

MRF9030N

Untitled

MRF9030NR1

VIPer 32

945 TRANSISTOR

MRF9030MBR1

Untitled

MRF9030N

Untitled

MRF9030L

transistor d 945

Untitled

TO-270-2

Untitled

VIPer 32

mrf9030