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EMHIZER MICRO ELCO-MS-257/507-03
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Bristol Electronics	ELCO-MS-257/507-03		23			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Winchester Interconnect B-MS25-75SW MLDG SER 25 75 CONT SOC
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CDM Electronics	B-MS25-75SW		156			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Winchester Interconnect B-MS25-75PW MLDG SER 25 75 CONT PIN
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CDM Electronics	B-MS25-75PW					1 - 10 - 100 - 1000 - 10000 -	Get Quote

MS2575 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MS2575		Advanced Power Technology	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS		Original	PDF
MS2575		Microsemi	RF & MICROWAVE TRANSISTOR		Original	PDF

MS2575 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2575 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • 1025-1150 MHz GOLD METALLIZATION INPUT MATCHED INFINITE VSWR CAPABILITY @ RATED CONDITIONS	Original	PDF	MS2575 MS2575
MS2575 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2575 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • 1025-1150 MHz GOLD METALLIZATION INPUT MATCHED INFINITE VSWR CAPABILITY @ RATED CONDITIONS	Original	PDF	MS2575 MS2575
Untitled Abstract: No abstract text available Text: MS2575 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • 1025-1150 MHz GOLD METALLIZATION INPUT MATCHED INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 35 W MINIMUM GP = 10.7 dB .280 4LSL M115 Epoxy Sealed DESCRIPTION:	Original	PDF	MS2575 MS2575
Untitled Abstract: No abstract text available Text: MS2575 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The MS2575 is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. Refractory/Gold Metallization Emitter Site Ballasted :1 VSWR Capability	Original	PDF	MS2575 MS2575 MSC1666
MICROSEMI RF TRANSISTOR Abstract: M115 MS2575 Text: MS2575 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES Refractory/Gold Metallization Emitter Site Ballasted ∞ :1 VSWR Capability Low Thermal Resistance Input Matching Overlay Geometry Metal/Ceramic Hermetic Package	Original	PDF	MS2575 MS2575 MSC1666 MICROSEMI RF TRANSISTOR M115
filter for GPS spice Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode Text: RF手册第14版用于高性能RF产品的应用和设计手册2010年5月恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用恩智浦RF手册令设计更简易恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率	Original	PDF	RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
TACAN 41 RF transistor Abstract: RF transistors TACAN MICROSEMI RF TRANSISTOR MS2552 MS2575 Text: MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product	Original	PDF	MS2552 MS2552 MSC1665 TACAN 41 RF transistor RF transistors TACAN MICROSEMI RF TRANSISTOR MS2575
MPF102 spice model Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for	Original	PDF	te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
LE79Q2281 Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572 Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security	Original	PDF
sot-89 BV SMD TRANSISTOR MARKING CODE Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer Text: RFマニュアル第14版 RF製品用のアプリケーションおよび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ	Original	PDF	NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
Untitled Abstract: No abstract text available Text: MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1 Capability Input/Output Matching Overlay Geometry Metal/Ceramic Hermetic Package POUT = 325 W Min.	Original	PDF	MS2552 MS2552 MSC1665
circuit diagram of GSM based home automation system Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original	PDF
Untitled Abstract: No abstract text available Text: MS2552 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The MS2552 device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1	Original	PDF	MS2552 MS2552 MS2575 MSC1665
MG1007-42 Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30 Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are	Original	PDF	MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30