MT3S07U Search Results

MT3S07U Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MT3S07U		Toshiba			Scan	PDF
MT3S07U		Toshiba	TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE		Scan	PDF

MT3S07U Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MT3S07U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07U VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain: \|S21e\|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) Unit: mm	Original	MT3S07U	PDF
MT3S07U Abstract: No abstract text available Text: MT3S07U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07U VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain: \|S21e\|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) Unit: mm	Original	MT3S07U SC-70 MT3S07U	PDF
MT3S07U Abstract: No abstract text available Text: MT3S07U 東芝トランジスタシリコンNPNエピタキシャルプレーナ形 MT3S07U ○ VHF~UHF 帯低電圧動作•低雑音タイプ • 単位: mm 雑音特性が優れています。 : NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz : \|S21e\|2 = 9.5dB	Original	MT3S07U SC-70 MT3S07U	PDF
MT3S07U Abstract: No abstract text available Text: MT3S07U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07U VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain: \|S21e\|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) Unit: mm	Original	MT3S07U MT3S07U	PDF
TA4029CTC Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X Text: 製品カタログ 2011-1 東芝半導体製品カタログ高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8	Original	BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X	PDF
JDV2S31CT Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000 Text: 製品カタログ 2009-9 東芝半導体製品カタログ高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。	Original	BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000	PDF
2sc5108 Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,	Original	BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz	PDF
sec 2sc5088 Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and	Original	BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS	PDF
MT4S300T Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476 Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones	Original	BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476	PDF
FET K161 Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR	PDF
FET K161 Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923 Text: 高周波用半導体デバイストランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923	PDF
2SK3075 equivalent Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066 Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz	Original	2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MT3S07U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07U VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure NF = 1.5 dB High Gain \|S2iel2 = 9.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz (VCE = 3 V, IC = 15 mA, f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	MT3S07U	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA MT3S07U TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07U Unit in mm VH F—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure High Gain 2.1 NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz \|S2lel2 = 9.5 dB ( V C E = 3 V, Ic = 15mA, f = 2GHz)	OCR Scan	MT3S07U	PDF