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Toshiba America Electronic Components MT3S111TU,LF RF SIGE NPN BIPOLAR TRANSISTOR N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT3S111TU,LF	Cut Tape	14,649		1	1 $0.66 10 $0.504 100 $0.3876 1000 $0.3081 10000 $0.3081	Buy Now
	MT3S111TU,LF	Digi-Reel	14,649		1	1 $0.66 10 $0.504 100 $0.3876 1000 $0.3081 10000 $0.3081	Buy Now
	MT3S111TU,LF	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.28033	Buy Now
Toshiba America Electronic Components MT3S111(TE85L,F) RF TRANS NPN 6V 11.5GHZ SMINI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT3S111(TE85L,F)	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.29737	Buy Now
Newark	MT3S111(TE85L,F)	Cut Tape	8,848		1	1 $0.235 10 $0.235 100 $0.235 1000 $0.235 10000 $0.235	Buy Now
EBV Elektronik	MT3S111(TE85L,F)			27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components MT3S111P(TE12L,F) RF TRANS NPN 6V 8GHZ PW-MINI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT3S111P(TE12L,F)	Reel			1,000	1 - 10 - 100 - 1000 $0.45563 10000 $0.38165	Buy Now
	MT3S111P(TE12L,F)	Cut Tape			1	1 $0.97 10 $0.97 100 $0.97 1000 $0.97 10000 $0.97	Buy Now
	MT3S111P(TE12L,F)	Digi-Reel			1	1 $0.97 10 $0.97 100 $0.97 1000 $0.97 10000 $0.97	Buy Now
EBV Elektronik	MT3S111P(TE12L,F)		1,000	25 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components MT3S111(TE85LF) Trans RF BJT 6V 0.1A 3-Pin SC-59 Emboss T/R - Product that comes on tape, but is not reeled (Alt: 09AK5786)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MT3S111(TE85LF)	Ammo Pack		32 Weeks, 4 Days	1	1 $0.655 10 $0.576 100 $0.456 1000 $0.456 10000 $0.456	Buy Now
	MT3S111(TE85LF)	Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components MT3S111P(TE12LF) TOSMT3S111P(TE12LF) RADIO FREQUENCY TRA - Tape and Reel (Alt: MT3S111P(TE12L,F))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MT3S111P(TE12LF)	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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MT3S111 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
MT3S111P	Toshiba	Japanese - Transistors	Original	PDF
MT3S111P	Toshiba	Transistors	Original	PDF
MT3S111P(TE12L,F)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF SIGE HETEROJUNCTION BIPOLAR N	Original	PDF
MT3S111(TE85L,F)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF SIGE HETEROJUNCTION BIPOLAR N	Original	PDF
MT3S111TU	Toshiba	Japanese - Transistors	Original	PDF
MT3S111TU	Toshiba	Transistors	Original	PDF
MT3S111TU,LF	Toshiba America Electronic Components	RF SIGE NPN BIPOLAR TRANSISTOR N	Original	PDF

MT3S111 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MT3S111TU Abstract: No abstract text available Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: \|S21e\|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05	Original	MT3S111TU MT3S111TU	PDF
Untitled Abstract: No abstract text available Text: MT3S111P 東芝トランジスタシリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S111P ○ VHF～UHF 帯特低雑音・低歪み増幅用単位: mm 長 • 雑音特性が優れています。:NF=0.95 dB 標準 (@ f=1 GHz) •	Original	MT3S111P SC-62	PDF
Untitled Abstract: No abstract text available Text: MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.95 dB typ. (@f=1 GHz) • High Gain: \|S21e\|2=10.5 dB (typ.) (@f=1 GHz)	Original	MT3S111P SC-62	PDF
Untitled Abstract: No abstract text available Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:\|S21e\| =12 dB (typ.) (@ f=1 GHz) 2 Marking	Original	MT3S111 O-236 SC-59	PDF
Untitled Abstract: No abstract text available Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:\|S21e\|2=12 dB (typ.) (@ f=1 GHz) Marking	Original	MT3S111 O-236 SC-59	PDF
MT3S111P Abstract: No abstract text available Text: MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.95 dB typ. (@f=1 GHz) • High Gain: \|S21e\|2=10.5 dB (typ.) (@f=1 GHz)	Original	MT3S111P SC-62 MT3S111P	PDF
mt3s111 Abstract: No abstract text available Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:\|S21e\|2=12 dB (typ.) (@ f=1 GHz) Marking	Original	MT3S111 O-236 SC-59 mt3s111	PDF
Untitled Abstract: No abstract text available Text: MT3S111TU 東芝トランジスタシリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S111TU ○ VHF～UHF 帯低雑音・低歪み増幅用単位: mm 2.1±0.1 3 1 2. エミッタ 3. コレクタ UFM JEDEC JEITA 東芝 2-2U1B 質量: 6.6 mg 標準	Original	MT3S111TU	PDF
Untitled Abstract: No abstract text available Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 High Gain: \|S21e\| =12.5 dB typ. (@ f=1 GHz) 2 3 3 2 1. BASE 2. EMITTER 3. COLLECTOR R5 1 1 0.7±0.05	Original	MT3S111TU	PDF
Untitled Abstract: No abstract text available Text: MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.95 dB typ. (@f=1 GHz) • High Gain: \|S21e\| =10.5 dB (typ.) (@f=1 GHz)	Original	MT3S111P	PDF
Untitled Abstract: No abstract text available Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: \|S21e\|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05	Original	MT3S111TU 10led	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
TA4029CTC Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X Text: 製品カタログ 2011-1 東芝半導体製品カタログ高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8	Original	BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF

3sk catalog Abstract: TE85L Toshiba Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS	Original	BCE0003H 3sk catalog TE85L Toshiba	PDF
MT4S300T Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476 Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones	Original	BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476	PDF
MT4S300T Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors	Original	2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T	PDF
XM0830SJ Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
BGT24MTR11 Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586 Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
MT3S111P Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293 Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287	Original	2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293	PDF
2sc5066 Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136 Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs	Original	SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136	PDF
2sc3052ef Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor	PDF

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MT3S111 Price and Stock

Toshiba America Electronic Components MT3S111TU,LF

Toshiba America Electronic Components MT3S111(TE85L,F)

Toshiba America Electronic Components MT3S111P(TE12L,F)

Toshiba America Electronic Components MT3S111(TE85LF)

Toshiba America Electronic Components MT3S111P(TE12LF)

MT3S111 Datasheets (7)

MT3S111 Datasheets Context Search

MT3S111TU

Untitled

Untitled

Untitled

Untitled

MT3S111P

mt3s111

Untitled

Untitled

Untitled

Untitled

GT30F131

TA4029CTC

IGBT GT30F124

3sk catalog

MT4S300T

MT4S300T

XM0830SJ

GT30F124

BGT24MTR11

transistor bc 245

MT3S111P

2sc5066

2sc3052ef