IDT71V433
Abstract: No abstract text available
Text: PRELIMINARY 32K x 32, 3.3V SYNCHRONOUS IDT71V433 SRAM WITH FLOW-THROUGH OUTPUTS BURST COUNTER, SINGLE CYCLE DESELECT Integrated Device Technology, Inc. FEATURES: • 32K x 32 memory configuration • Supports high performance system speed - up to 60 MHz 10 ns Clock-to-Data Access
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IDT71V433
MT58LC32K32B2LG-XX)
100-pin
IDT71V433
71V433
PK100-1)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M I I^ S Q N 32K 32K x 32 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER NEW SYNCHRONOUS SRAM MT58LC32K32B2 32 SYNCBURST SRAM X FEATURES • • • • • • • • Fast access times: 9,10,11,12 and 14ns Fast OE: 5 and 6ns
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MT58LC32K32B2
100-lead
MT58LC32K32B2LG-12
MT58LC32K32B2LG-9
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT58LC32K32B2 3 2 K X 32 S Y N C BU RS T SRAM 32K x 32 SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fa st a ccess tim es: 9 , 1 0 ,1 1 , 12 an d 14ns
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MT58LC32K32B2
128ns.
MTS8LC32K32B2
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY I^ IIC R O N 32K SYNCHRONOUS SRAM MT58LC32K32B2 32 SYNCBURST SRAM X 32K x 32 SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 9 ,1 0 ,1 1 ,1 2 and 14ns
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MT58LC32K32B2
100-lead
160-PIN
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MT58LC32K32B2LG9
Abstract: No abstract text available
Text: PRELIMINARY I^ICRDN 32K X M T 58LC 32K 32C 4 32 S Y N C B U R S T SRAM 32K x 32 SRAM +3.3VSUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS AND BURST COUNTER FEATURES • • • • • • • • • Fast access times: 4.5,5,6,7 and 8ns Fast OE: 5 and 6ns Single +3.3V +5% power supply
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100-lead
MT58LC32K32B2LG-9
MT58LC32K32B2LG9
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC “ P O N I MT2LSYT3264T1/T2 32K x 64 SYNCHRONOUS SRAM MODULE SYNCH RONOUS R I/M M •■ I— O K A M |V |U U U L b 32K x 64 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS AND BURST COUNTER FEATURES PIN ASSIGNMENT Top View • 80 position dual read-out d u a l in-line m em ory m odule
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MT2LSYT3264T1/T2
160-Lead,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY * <|l ~ n n M » MT2LSYT3264T1/T2 32K x 64 SYNCHRONOUS SRAM MODULE 32K x 64SRAM SYNCHRONOUS . . . O r lA IV I H ll/N r M II •— 256KB, 3.3V, FLOW-THROUGH SYNCHRONOUS BURST, SECONDARY CACHE MODULES n /IU D U L b FEATURES OPTIONS 160-Lead DIMM
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MT2LSYT3264T1/T2
64SRAM
256KB,
160-lead,
160-PIN
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Untitled
Abstract: No abstract text available
Text: ADVANCE U II^ C a n iM ni — 1 MT3LST3264 P , MT5LST6464(P) 32K, 64K x 64 SYNCHRONOUS SRAM MODULE 32K, 64K x 64 SRAM with TAG RAM 256KB/512KB, 3.3V, FLOW-THROUGH OR PIPELINED SYNCHRONOUS BURST, SECONDARY CACHE MODULES FEATURES PIN ASSIGNMENT (Front View)
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MT3LST3264
MT5LST6464
160-lead,
82430FX
256KB/512KB,
160-PIN
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C19H
Abstract: as89
Text: p iic m S22B t M EG SYNCHRONOUS SRAM DIR q is i SRAM DIE 1 meg syn c h r o n o u s SRAM 64K X 18 , 32K x 32 a n d 32K x 36 FEATURES • • • • • Single 3.3V ±0.2V p o w er supply 5V -tolerant I /O C om m on d ata Inp u ts and data outp u ts In d iv id u al BYTE WRITE control an d GLOBAL WRITE
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Untitled
Abstract: No abstract text available
Text: ADVANCE M I in P r iN MT2LSYT3264B2 32K x 64 SYNCHRONOUS SRAM MODULE 32K x 64 SRAM SYNCHRONOUS SRAM MODULE +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS AND BURST COUNTER FEATURES PIN A SSIG N M E N T Top View • 80 position d u al-read -ou t dual in-line m em ory m odu le
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MT2LSYT3264B2
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MT58LC32K32B2LG9
Abstract: No abstract text available
Text: PRELIMINARY M I C R O N 32K M T58LC 32K 32B 2 32 S Y N C B U R S T SRAM 32K x 32 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 9 ,1 0 ,1 1 ,1 2 and 14ns
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T58LC
100-lead
MTS8LC32K32B2
MT58LC32K32B2LG9
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Untitled
Abstract: No abstract text available
Text: SUPERSEDED BY MT58LC32K32/36B3 MICRON I 32K “ CCMNOLOGV. ir-:C MT58LC32K32/36B2 32/36 SYNCBURST SRAM X 32K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • •
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MT58LC32K32/36B3
MT58LC32K32/36B2
160-PIN
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TN0003
Abstract: No abstract text available
Text: S25A 1 M E G S Y N C H R O N O U S S R A M DIE SRAM DIE 1 m eg s y n c h r o n o u s BURST SRAM 64K x 18, 32K x 32 and 32K x 36 FEATURES DIE DATA B A S E S25A DIE OUTLINE see page 5 • 3.3V +10%/-5% power supply forD7 version • 3.3V ±5% power supply for C4 or B2 version
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY |uiic: r o n 32K X MT58LC32K32C4 32 SYNCBURST SRAM 32K x 32 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS AND BURST COUNTER FEATURES • • • • • • • • • • • • • • • • F ast access tim es: 4 .5 ,5 ,6 , 7 an d 8ns
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MT58LC32K32C4
MTS8LC32K32C4
MT58LC32K32B2LG-9
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY saecoMucrm iHc. t MEG SYNCHRONOUS SRAM DIE SRAM DIE 1 MEG SYNCHRONOUS SRAM 64K x 18, 32K x 32 and 32K x 36 FEATURES Single 3.3V ±0.2V power supply 5V-tolerant I/O Common data inputs and data outputs Individual BYTE WRITE control and GLOBAL WRITE
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150mm
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC ^ P n N I 11 ^ MT2LSYT3264T1/T2 32K x 64 SYNCHRONOUS SRAM MODULE SYNCHRONOUS SRAM MODULE 32K x 64 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS AND BURST COUNTER FEATURES PIN ASSIGNMENT Top View • 80 position dual read-out d ual in-line m em ory m odule
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MT2LSYT3264T1/T2
160-Lead,
MT2LSYT3294T1/T2
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Untitled
Abstract: No abstract text available
Text: ADVANCE lu iir -c a r n iv i I m t 2 l s y t 3264B2 32K X 64 SYNCHRONOUS SRAM MODULE 32K x 64 SRAM SYNCHRONOUS SRAM MODULE +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS AND BURST COUNTER FEATURES PIN ASSIGNMENT Top View • 80 position dual-read-out dual in-line memory module
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3264B2
200ms
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