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NXP Semiconductors MW6S010MR1 RF MOSFET LDMOS 28V TO270-2
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DigiKey	MW6S010MR1	Reel			500	1 - 10 - 100 - 1000 $12.70082 10000 $12.70082	Buy Now

MW6S010MR1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MW6S010MR1		Freescale Semiconductor	RF Power Field Effect Transistor		Original	PDF
MW6S010MR1		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 28V 10W TO-270-2		Original	PDF

MW6S010MR1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FERRITE BEAD 1000 OHM 0805 Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 2, 5/2006 Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1	Original	PDF	MW6S010 MW6S010NR1/GNR1. MW6S010MR1 MW6S010GMR1 MW6S010MR1 FERRITE BEAD 1000 OHM 0805 MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1
Untitled Abstract: No abstract text available Text: Document Number: MW6S010 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1	Original	PDF	MW6S010 MW6S010NR1/GNR1. MW6S010MR1 MW6S010GMR1 MW6S010MR1
MW6S010NR1 Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1 Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	PDF	MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	PDF	MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 MW6S010
CRCW12061001F100 Abstract: MW6S010NR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	PDF	MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 CRCW12061001F100 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1