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    TAIYO YUDEN LSDND2020MKT1R0MM

    FIXED IND 1UH 1.9A 64 MOHM SMD
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    TAIYO YUDEN LSDND2020MKT4R7MM

    FIXED IND 4.7UH 950MA 242MOHM SM
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    DigiKey LSDND2020MKT4R7MM Digi-Reel 4,575 1
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    LSDND2020MKT4R7MM Cut Tape 4,575 1
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    Mouser Electronics LSDND2020MKT4R7MM 3,237
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    TAIYO YUDEN LCDND2020MKT1R0MM

    FIXED IND 1UH 1.9A 64 MOHM SMD
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    DigiKey LCDND2020MKT1R0MM Reel 2,500 2,500
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    TAIYO YUDEN LCDND2020KKTR68MM

    FIXED IND 680NH 2A 60 MOHM SMD
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    DigiKey LCDND2020KKTR68MM Reel 2,500 2,500
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    Mouser Electronics LCDND2020KKTR68MM 4,630
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    TAIYO YUDEN LSXND2020MKT1R0N0G

    FIXED IND 1UH 1.7A 70 MOHM SMD
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    DigiKey LSXND2020MKT1R0N0G Reel 2,500 2,500
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    ND2020 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ND2020 Temic Semiconductors N-Channel Depletion-Mode MOSFET Transistors Original PDF
    ND2020L Temic Semiconductors N-Channel Depletion-Mode MOSFET Transistors Original PDF
    ND2020L Vishay Siliconix N-Channel Depletion-Mode MOSFET Transistors Original PDF
    ND2020L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    ND2020L Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    ND2020L-TR1 Vishay Transistor Mosfet N-CH 200V 0.132A 3TO-226AA T/R Original PDF

    ND2020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN901

    Abstract: ND2012L ND2020 ND2020L 37807
    Text: ND2012L/2020L Siliconix NĆChannel DepletionĆMode MOS Transistors Product Summary Part Number V BR DSV Min (V) ND2012L rDS(on) Max (W) VGS(off) (V) ID (A) 12 -1.5 to -4 0.16 20 -0.5 to -2.5 0.132 200 ND2020L For applications information see AN901. Features


    Original
    PDF ND2012L/2020L ND2012L ND2020L AN901. O226AA) P-37807--Rev. AN901 ND2012L ND2020 ND2020L 37807

    ND2020

    Abstract: ND2012L ND2020L TA 7061
    Text: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L rDS(on) Max (W) VGS(off) (V) ID (A) 12 –1.5 to –4 0.16 20 –0.5 to –2.5 0.132 200 ND2020L Features Benefits Applications D D D D D D D D D


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    PDF ND2012L/2020L ND2012L ND2020L O-226AA O-226AA) S-52426--Rev. 14-Apr-97 ND2020 ND2012L ND2020L TA 7061

    2020L

    Abstract: Nd202 ND2012L ND2020 ND2020L N-Channel Depletion-Mode MOSFET
    Text: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L rDS(on) Max (W) VGS(off) (V) ID (A) 12 –1.5 to –4 0.16 20 –0.5 to –2.5 0.132 200 ND2020L Features Benefits Applications D D D D D D D D D


    Original
    PDF ND2012L/2020L ND2012L ND2020L O-226AA O-226AA) S-52426--Rev. 14-Apr-97 2020L Nd202 ND2012L ND2020 ND2020L N-Channel Depletion-Mode MOSFET

    nd2020

    Abstract: ND2012L ND2020L S-52426 2020L
    Text: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L ND2020L VGS(off) (V) ID (A) 12 - 1.5 to - 4 0.16 20 - 0.5 to - 2.5 0.132 200 Features D D D D D rDS(on) Max (O) Benefits High Breakdown Voltage: 220 V


    Original
    PDF ND2012L/2020L ND2012L ND2020L O-226AA 18-Jul-08 nd2020 ND2012L ND2020L S-52426 2020L

    Untitled

    Abstract: No abstract text available
    Text: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L ND2020L VGS(off) (V) ID (A) 12 - 1.5 to - 4 0.16 20 - 0.5 to - 2.5 0.132 200 Features D D D D D rDS(on) Max (O) Benefits High Breakdown Voltage: 220 V


    Original
    PDF ND2012L/2020L ND2012L ND2020L O-226AA 08-Apr-05

    pt100 interface current source multiplexer

    Abstract: pt100 sensor with adc 4-20mA pt100 sensor interface with microcontroller DN2540 NE43 XTR108 XTR108EA Voltage to Current Converter dual 4-20mA scheme xtr 110 RTD signal conditioning theory
    Text: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


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    PDF XTR108 SBOS187C 4-20mA, 4-20mA SSOP-24 XTR108 pt100 interface current source multiplexer pt100 sensor with adc 4-20mA pt100 sensor interface with microcontroller DN2540 NE43 XTR108EA Voltage to Current Converter dual 4-20mA scheme xtr 110 RTD signal conditioning theory

    Untitled

    Abstract: No abstract text available
    Text: XTR XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


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    PDF XTR108 SBOS187C 4-20mA, 4-20mA SSOP-24 XTR108

    N-Channel Depletion-Mode MOSFET

    Abstract: normal scr operation depletion-mode depletion mode current limiter mosfet vs SCR AN901 mosfet modern applications voltage regulator mosfet 1,2 n channel depletion MOSFET depletion mode mosfet
    Text: AN901 Siliconix DepletionĆMode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction MOSFET may also perform in the enhancementĆmode. The nĆchannel enhancementĆmode MOSFET Figure 1c , requires a positiveĆpolarity gate voltage


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    PDF AN901 ND2012 ND2406 2N692) N-Channel Depletion-Mode MOSFET normal scr operation depletion-mode depletion mode current limiter mosfet vs SCR AN901 mosfet modern applications voltage regulator mosfet 1,2 n channel depletion MOSFET depletion mode mosfet

    N-Channel Depletion-Mode MOSFET

    Abstract: P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion n-channel mosfet triggering depletion p mosfet n mosfet depletion
    Text: AN901 Depletion-Mode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction A principal advantage of the depletion-mode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletion-mode structure, the


    Original
    PDF AN901 ND2012 ND2406 2N692) 21-Jun-94 N-Channel Depletion-Mode MOSFET P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion n-channel mosfet triggering depletion p mosfet n mosfet depletion

    pt100 sensor interface with microcontroller

    Abstract: PT100 RTD signal conditioning noise problem pt100 sensor with adc 4-20mA pt100 rtd spi pt100 interface WITH ADC maxim pt100 interface RTD SENSING CIRCUIT 4-20mA maxim 4-20ma receiver il300 national instruments piezoelectric pressure sensor
    Text: Maxim > App Notes > A/D and D/A CONVERSION/SAMPLING CIRCUITS AMPLIFIER AND COMPARATOR CIRCUITS SIGNAL GENERATION CIRCUITS Keywords: 4-20mA, current loop, current loops, DAC, ADC, current DAC, isolation, 2-wire, signal conditioning, low power, D/A, industrial control, EMI, transducers, current transmission, transmitter


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    PDF 4-20mA, 4-20mA MAX535: MAX5351: MAX5352: MAX5353: MAX5354: MAX5355: MAX6120: MAX6325: pt100 sensor interface with microcontroller PT100 RTD signal conditioning noise problem pt100 sensor with adc 4-20mA pt100 rtd spi pt100 interface WITH ADC maxim pt100 interface RTD SENSING CIRCUIT 4-20mA maxim 4-20ma receiver il300 national instruments piezoelectric pressure sensor

    Voltage to Current Converter dual 4-20mA scheme

    Abstract: pt100 rtd spi UC 493 pt100 multiplexer DN2540 NE43 XTR108 XTR108EA RTD PT100 temp Vs resistance relationship 4-20ma scheme
    Text: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


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    PDF XTR108 SBOS187C 4-20mA, 4-20mA SSOP-24 XTR108 Voltage to Current Converter dual 4-20mA scheme pt100 rtd spi UC 493 pt100 multiplexer DN2540 NE43 XTR108EA RTD PT100 temp Vs resistance relationship 4-20ma scheme

    MIL-I-8835A

    Abstract: camtex trays ND07071 camtex trays QFP nd r304 E20-02080-00 ITW Camtex ceramic QFP Package 100 lead exposed QFP 144 CAMTEX
    Text: January 1998, ver.3 Introduction Application Note 71 Surface-mount J-lead and quad flat pack QFP devices are now common on boards because of their density, size, and cost benefits. A few precautions, however, are necessary to protect these devices from


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-3977; Rev 0; 1/06 KIT ATION EVALU E L B A IL AVA Microcontroller-Interface, 4.5-/3.5-Digit Panel Meters with 4–20mA Output Features The MAX1366/MAX1368 low-power, 4.5- and 3.5-digit, panel meters feature an integrated sigma-delta analogto-digital converter ADC , LED display drivers, voltage


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    PDF MAX1366/MAX1368 MAX1366/MAX1368â 200mV. MAX1368 MAX1366 32L/48L MAX1366/MAX1368 32/48L

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


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    PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    Voltage to Current Converter dual 4-20mA scheme

    Abstract: No abstract text available
    Text: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


    Original
    PDF XTR108 SBOS187C 4-20mA, 4-20mA SSOP-24 XTR108 Voltage to Current Converter dual 4-20mA scheme

    strapack s-669

    Abstract: strapack Sivaron S 669 MIL-I-8835A kbr 208 MIL-D-3464 strapack d-52 MIL-B-81705C EIA-625 MIL-D-3464 type 1
    Text: 1999年 1 月 ver. 4 イントロダク ション Application Note 71 現在表面実装用のJリード・パッケージ、クワッド・フラット・パック (QFP)パッケージ、およびFineLine BGATMを含むボール・グリッド・ア


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    PDF -AN-071-04/J strapack s-669 strapack Sivaron S 669 MIL-I-8835A kbr 208 MIL-D-3464 strapack d-52 MIL-B-81705C EIA-625 MIL-D-3464 type 1

    d2020e

    Abstract: No abstract text available
    Text: SILICONIX INC 18E I Ô5S473S 0014053 fy S iG c o n ix JLm in c o rp o ra te d ND2020 SERIES "T-2.7-7. S N-Channel Depletion-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER 1 • V BR)DSV fDS(ON) (V) (« ) Id (A)


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    PDF 5S473S ND2020 ND2020L ND2020E O-206AC VDDQ20 ND2020E. d2020e

    ND2020L

    Abstract: No abstract text available
    Text: A flg S ä VDDQ SERIES DIE N-Channel Depletion-Mode MOS Transistors VDDQ1CHP* VDDQ2CHP* ND2012L ND2020L ‘ Meets or exceeds specification for all part numbers listed below 0.038 ro.965; Source Pad For additional design information please consult the typical performance curves VDDQ20.


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    PDF ND2020L ND2012L VDDQ20. ND2020L

    Untitled

    Abstract: No abstract text available
    Text: Te m ic siiiconix_ ND2012L/2020L N-Channel Depletion-Mode MOS Transistors Product Summary Part Number v BR DSV ND2012L Min (V) r i)S(on) Max (£2) 200 ND2020L Id Vg s (oB) (V) (A) 12 -1.5 to - 4 0.16 20 -0.5 to -2.5 0.132 For applications information see AN901, page 12-46.


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    PDF ND2012L/2020L ND2012L ND2020L AN901, P-37807--Rev.

    Untitled

    Abstract: No abstract text available
    Text: BlS S & VDDQ20 N-Channel _ Depletion-Mode MOSFET TYPE PACKAGE DEVICE Single TO-92 TO-226AA ND2012L, ND2020L Single Chip • Available as VDDQ1CHP, VDDQ2CHP TYPICAL CHARACTERISTICS On-Reslstance & Drain Current vs. Gate-Source Cutoff Voltage


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    PDF VDDQ20 O-226AA) ND2012L, ND2020L ND2020) VDDQ20 ND2012)

    N-Channel Depletion-Mode MOSFET

    Abstract: TA 7061 52426 ND2020L
    Text: Temic ND2012L/2020L Semiconductors N-Channel Depletion-Mode MOSFET Transistors Product Summary P a rt N um ber V<BR DSV M in V) ND2012L ND2020L 200 Features • • • • • High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 Q Low Input and Output Leakage


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    PDF ND2012L/2020L ND2012L ND2020L O-226AA S-52426--Rev. 14-Apr-97 N-Channel Depletion-Mode MOSFET TA 7061 52426

    ND2020L

    Abstract: No abstract text available
    Text: OfSSS& ND2012L, ND2020L N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER V BRJDSS rDS(ON (O) •d (A) ND2012L 200 12 0.16 ND2020L 200 20 0.132 3 DRAIN Performance Curves: VDDQ20 3 .I— i— , 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


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    PDF ND2012L, ND2020L ND2012L VDDQ20 2020L 150ource

    DN25D

    Abstract: 20c15 fet dn25d interfacing AD7715 ground detection ammeter circuit Symbios Logic 20c15 0-5 v to 4-20 ma converter
    Text: Loop-Powered 4-20 mA DAC A N A LO G D E V IC E S AD421 FEATURES 4-20 mA Current Output HART* Compatible 16-Bit Resolution and Monotonicity ±0.01% Integral Nonlinearity 5 V or 3 V Regulator Output 2.5 V and 1.25 V Precision Reference 750 |tA Quiescent Current max


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    PDF 16-Bit 16-Pin AD421 AD421 16-Lead RU-16) DN25D 20c15 fet dn25d interfacing AD7715 ground detection ammeter circuit Symbios Logic 20c15 0-5 v to 4-20 ma converter