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    National Semiconductor Corporation NDP506A

    POWER FIELD-EFFECT TRANSISTOR, 26A I(D), 60V, 0.05OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NDP506A 2,437
    • 1 $6
    • 10 $6
    • 100 $6
    • 1000 $2.2
    • 10000 $2.1
    		Buy Now
    ComSIT USA NDP506A 245
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    NDP506A Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDP506A National Semiconductor N-Channel Enhancement Mode Power FET Scan PDF
    NDP506A National Semiconductor TO-220AB DMOS Power MOSFETS Scan PDF
    NDP506AE National Semiconductor TO-220AB DMOS Power MOSFETS Scan PDF
    NDP506AEL National Semiconductor TO-220AB Logic Level DMOS Power MOSFETS Scan PDF
    NDP506AL National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDP506AL National Semiconductor TO-220AB Logic Level DMOS Power MOSFETS Scan PDF

    NDP506A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    NDP506A

    Abstract: zener diode 4B3 NDB506B NDB506A NDP506B
    Text: National Semiconductor M a y 19 95 " NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDP506A NDP506B NDB506A NDB506B 125-C bSD113D 0D4D21D zener diode 4B3 NDB506B PDF

    NDP505A

    Abstract: B23 j ZENER DIODE NDP506A zener Diode B23
    Text: rvtrih ^r 1QQ1 Semiconductor NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high


    OCR Scan     		NDP505A/NDP505B, NDP506A/NDP506B B1-043-299-2408 hSG113D D3lifci33 NDP505A B23 j ZENER DIODE NDP506A zener Diode B23 PDF

    NDP506BL

    Abstract: Zener diode DW NDP506A NDB506AL NDB506BL NDP506AL
    Text: National Semiconductor" May 1995 NDP506AL / NDP506BL NDB506AL / NDB506BL N-Channel Logic Level Enhancement I ide Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using


    OCR Scan     		NDP506AL NDP506BL NDB506AL NDB506BL S01130 0GM0215 bSD1130 Zener diode DW NDP506A NDB506BL PDF

    NDP406BL

    Abstract: NDP508AEL MTP3055EL ndp706al NDP610AL NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL
    Text: *NSCS TO-220AB Logic Level DMOS \ Gii D, N Channel •o Pd Watts M ax 150 (m il) M ax (Amps/Volts) (Amps) Max 38 21/5 42 Device 60 NDP706AEL NDP710AL 42 21/5 40 NDP706BEL 13/5 26 100 NDP606AEL 12/5 24 NDP606BEL 120 7.5/5 15 60 NDP506AEL NDP708AEL 150 6.5/5


    OCR Scan     		O-220AB NDP710AEL NDP710AL NDP710BEL NDP710BL NDP610AEL NDP610AL NDP610BEL NDP610BL NDP510AEL NDP406BL NDP508AEL MTP3055EL ndp706al NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL PDF

    B23 zener diode

    Abstract: zener Diode B23 NDP505A NDP506A transmitter and receiver MINI CAMERA HRD-B30M115 B23 j ZENER DIODE NDP505B NDP506B
    Text: National Semiconductor Ontnhfir 1QQ1 NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high


    OCR Scan     		NDP505A/NDP505B, NDP506A/NDP506B hSG113D B23 zener diode zener Diode B23 NDP505A NDP506A transmitter and receiver MINI CAMERA HRD-B30M115 B23 j ZENER DIODE NDP505B NDP506B PDF

    b527

    Abstract: tic 263a NDP506A
    Text: National Semiconductor” M a y 19 95 NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field • 26 and 24A, 60V. RDS 0N| = 0.05 and 0.06J2. effect transistors are produced using National's


    OCR Scan     		NDP506A NDP506B NDB506A NDB506B bSD113D b527 tic 263a PDF

    NDP505A

    Abstract: NDP705AE NDP605A NDP405B NDP510A NDP510AE NDP510B NDP610A NDP610AE NDP610B
    Text: •NSCS 741 0031460 bSD113D TO-220AB DMOS N Channel N Channel rDS on @ ^ G S (Volts) Min Device (ma) Max 100 NDP710A •d rDS(on) @ lu/^GS Po (Volts) Min (Amps) (Watts) (Amps/Volts) Max Max 38 21/10 42 42 21/10 40 150 60 NDP710B ■ NDP610A 65 13/10 26 80


    OCR Scan     		O-220AB NDP710A NDP710AE NDP710B NDP710BE NDP610A NDP610AE NDP610B NDP610BE NDP510A NDP505A NDP705AE NDP605A NDP405B NDP510AE NDP510B PDF

    NDP406BL

    Abstract: DP408 DP706 NDP706AL NDP405AL DP608 NDP606AL P610BL P610B DP505
    Text: «NSCS Power MOSFETS continued N Channel r D S (o n | I q/^ G S (Volts) Min Device 100 NDP710AEL •n Pn r D S ( « l ) ® * d/ V B S (Amps) (Watts) (m ii) (Amps/Volts) Max Max Max 38 21/5 42 42 21/5 40 Min 150 NDP706AEL N DP710AL NDP710BEL Device (m a )


    OCR Scan     		O-220AB NDP710AEL DP710AL NDP710BEL NDP710BL NDP610AEL DP610AL NDP610BEL P610BL NDP510AEL NDP406BL DP408 DP706 NDP706AL NDP405AL DP608 NDP606AL P610B DP505 PDF