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    NE662M04 Price and Stock

    California Eastern Laboratories (CEL) NE662M04-A

    RF TRANS NPN 3.3V 25GHZ SOT343F
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    Component Electronics, Inc NE662M04-A 196
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    California Eastern Laboratories (CEL) NE662M04-T2-A

    SAME AS 2SC5508 NPN SILICON AMPL
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    California Eastern Laboratories (CEL) NE662M04-EVNF19

    EVAL BOARD FOR NE662M04 1.9GHZ
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    California Eastern Laboratories (CEL) NE662M04-EVGA19

    EVAL BOARD FOR NE662M04 1.9GHZ
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    California Eastern Laboratories (CEL) NE662M04-EVNF16

    EVAL BOARD FOR NE662M04 1.6GHZ
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    Find more NE662M04 price and stock on Findchips.com

    NE662M04 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE662M04 NEC NPN SILICON HIGH FREQUENCH TRANSISTOR Original PDF
    NE662M04 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE662M04-A Renesas Technology RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ M04 Original PDF
    NE662M04-AZ NEC TRANS GP BJT 3.3V 0.035A 4SOT-343 Original PDF
    NE662M04-EVGA09 CEL RF/IF and RFID - RF Evaluation and Development Kits, Boards - EVAL BOARD FOR NE662M04 900MHZ Original PDF
    NE662M04-EVGA09-A CEL RF/IF and RFID - RF Evaluation and Development Kits, Boards - EVAL BOARD FOR NE662M04 900MHZ Original PDF
    NE662M04-EVGA19 CEL RF/IF and RFID - RF Evaluation and Development Kits, Boards - EVAL BOARD FOR NE662M04 1.9GHZ Original PDF
    NE662M04-EVIP09 CEL RF/IF and RFID - RF Evaluation and Development Kits, Boards - EVAL BOARD FOR NE662M04 900MHZ Original PDF
    NE662M04-EVNF09 Renesas Technology RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR NE662M04 900MHZ Original PDF
    NE662M04-EVNF09-A CEL RF/IF and RFID - RF Evaluation and Development Kits, Boards - EVAL BOARD FOR NE662M04 900MHZ Original PDF
    NE662M04-EVNF16 Renesas Technology RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR NE662M04 1.6GHZ Original PDF
    NE662M04-EVNF19 CEL RF/IF and RFID - RF Evaluation and Development Kits, Boards - EVAL BOARD FOR NE662M04 1.9GHZ Original PDF
    NE662M04-EVNF24 Renesas Technology RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE662M04 2.4GHZ Original PDF
    NE662M04-T2 NEC NPN SILICON HIGH FREQUENCH TRANSISTOR Original PDF
    NE662M04-T2-A NEC TRANS GP BJT NPN 3.3V 0.035A 4SOT-343 T/R Original PDF
    NE662M04-T2-A Renesas Technology RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ M04 Original PDF

    NE662M04 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC AT 6884

    Abstract: T79 SOT 23
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 23 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    Original     		PDF OT-343 NE662M04 NE662M04 09e-12 22e-9 001e-12 IC AT 6884 T79 SOT 23

    2052-1215-00

    Abstract: NE622M04 rf ic 3358 2052-1215 AN1037 NE662M04 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093
    Text: California Eastern Laboratories APPLICATION NOTE AN1037 Optimizing a Silicon Bipolar LNA Performance for Blue Tooth Applications Abstract The NE662M04 is NEC's latest generation of Silicon Bipolar junction RF-transistor, using a state-of-the-art UHSO 25 GHz fT wafer process. It provides excellent low voltage/low


    Original     		PDF AN1037 NE662M04 2052-1215-00 NE622M04 rf ic 3358 2052-1215 AN1037 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093

    150J10

    Abstract: 7011 NPN TRANSISTOR
    Text: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    Original     		PDF NE662M04 OT-343 NE662M04 150J10 7011 NPN TRANSISTOR

    MJE 15024

    Abstract: NE662M04 TRANSISTOR 9642 2SC550 2SC5508 NE662M04-T2 S21E 0411 02 027 000 007E-9
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    Original     		PDF NE662M04 OT-343 NE662M04 MJE 15024 TRANSISTOR 9642 2SC550 2SC5508 NE662M04-T2 S21E 0411 02 027 000 007E-9

    MJE 15024

    Abstract: BF111 NE662M04 2SC5508 NE662M04-T2 NE662M04-T2-A S21E TRANSISTOR 9642 IC AT 6884
    Text: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    Original     		PDF NE662M04 OT-343 NE662M04 NE662M0anty MJE 15024 BF111 2SC5508 NE662M04-T2 NE662M04-T2-A S21E TRANSISTOR 9642 IC AT 6884

    NE662M04

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE662M04 CCBPKG SCHEMATIC CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters Q1 Parameter IS 1.6e-16 MJC 0.3 time seconds Units BF 111 XCJC 0.3 capacitance farads


    Original     		PDF NE662M04 6e-16 3e-15 4e-12 1e-12 3e-12 1e-11 NE662M04 09e-12 09erent

    ic LC 7218

    Abstract: NE662M04 LC 7011 NE662M04-T2 3335 2SC5508 S21E TRANSISTOR 9642 LC 7218 SOT 663 footprint
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCH TRANSISTOR NE662M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 23 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    Original     		PDF NE662M04 OT-343 NE662M04 24-Hour ic LC 7218 LC 7011 NE662M04-T2 3335 2SC5508 S21E TRANSISTOR 9642 LC 7218 SOT 663 footprint

    MARKING T79

    Abstract: transistor marking T79 ghz
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5508 / NE662M04 Data Sheet NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES •


    Original     		PDF 2SC5508 NE662M04 R09DS0055EJ0200 R09DS0055EJ0200 MARKING T79 transistor marking T79 ghz

    MJE 15024

    Abstract: NE662M04 transistor T79 ghz NA 6884 7011 NPN TRANSISTOR 0411 02 027 000 T79 "NPN Transistor"
    Text: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm • Flat Lead Style for better RF performance


    Original     		PDF NE662M04 OT-343 NE662M04 6e-16 3e-15 4e-12 1e-12 MJE 15024 transistor T79 ghz NA 6884 7011 NPN TRANSISTOR 0411 02 027 000 T79 "NPN Transistor"

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    ic 7848

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 60 GHz • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm


    Original     		PDF NESG2030M04 OT-343 NESG2030M04 NE662M04 07e-12 05e-12 75e-9 25e-9 ic 7848

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    NE5510279A

    Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
    Text: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is


    Original     		PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Untitled

    Abstract: No abstract text available
    Text: NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04 FEATURES • SiGe TECHNOLOGY: fT = 60 GHz Process • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm


    Original     		PDF NESG2030M04 OT-343 NESG2030M04 pa42e-13 2e-13 9e-14 6e-12 15e-12

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    NE662M04

    Abstract: NE34018 NE38018 NE334S01 HEMT 36 ghz transistor Bipolar HJ Crystal Radio UPB1007K
    Text: GPS/Satellite Radio NEW! UPB1007K Integrated GPS Receiver IC Key Features Key Specifications • Uses single 3V power supply • 3.0V VCC, 24mA typ I CC @ 3V • –45dBm max LO Leakage to RF Input • 70mW consumption • LNA Performance: 3dB NF typ, 15dB Gain,


    Original     		PDF UPB1007K 45dBm 16MHz 575GHz NE662M04 23GHz OT-343 NE662M04 NE34018 NE38018 NE334S01 HEMT 36 ghz transistor Bipolar HJ Crystal Radio

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


    Original     		PDF PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    sot-343

    Abstract: 2sc5508
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCH TRANSISTOR NE662M04 FEATURES_ • HIGH GAIN BANDWIDTH: fT = 23 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    OCR Scan     		PDF OT-343 NE662M04 NE662M04 voltage/l51 IS21I IS12I sot-343 2sc5508

    K 2645 transistor

    Abstract: NEC 9724 transistor LC 7011 E 9547
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON RF TRANSISTOR NE662M04 FEATURES_ • HIGH GAIN BANDWIDTH: f r = 22 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 19.5 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    OCR Scan     		PDF OT-343 NE662M04 E662M04 NE662M04 11l-- 24-Hour K 2645 transistor NEC 9724 transistor LC 7011 E 9547

    NA 6884

    Abstract: IC AT 6884 0200E TRANSISTOR 8808 W
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M04 FEATURES HIGH GAIN BANDWIDTH: f r = 23 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    OCR Scan     		PDF OT-343 NE662M04 NE662M04 NA 6884 IC AT 6884 0200E TRANSISTOR 8808 W