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California Eastern Laboratories (CEL) NE687M03-T1-A RF TRANS NPN 3V 14GHZ 3SMINMOLD
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NE687M03 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE687M03		California Eastern Laboratories	Npn Silicon Transistor		Original	PDF
NE687M03		NEC	NPN SILICON TRANSISTOR		Original	PDF
NE687M03		NEC	NPN Silicon Transistor.		Original	PDF
NE687M03-A		California Eastern Laboratories	NECs NPN Silicon Transistor		Original	PDF
NE687M03-T1-A		California Eastern Laboratories	NECs NPN Silicon Transistor		Original	PDF

NE687M03 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
bjt microwave 15 GHz npn Abstract: 2SC5436 NE687 NE687M03 S21E transistor 1038 BF-104 Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	Original	NE687M03 NE687M03 687M03 26e-12 19e-12 08e-12 12e-9 10e-9 bjt microwave 15 GHz npn 2SC5436 NE687 S21E transistor 1038 BF-104	PDF
BF-104 Abstract: NE687M03 2SC5436 NE687 NE687M03-A NE687M03-T1-A S21E BJT IC Vce Text: NEC's NE687M03 NPN SILICON TRANSISTOR FEATURES • • • OUTLINE DIMENSIONS Units in mm NEW M03 PACKAGE: • Smallest transistor outline package available • Low proﬁle/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:	Original	NE687M03 NE687M03 BF-104 2SC5436 NE687 NE687M03-A NE687M03-T1-A S21E BJT IC Vce	PDF
2SC5436 Abstract: NE687 NE687M03 S21E BF-104 AF1RC Text: NEC's NE687M03 NPN SILICON TRANSISTOR FEATURES • • • OUTLINE DIMENSIONS Units in mm NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:	Original	NE687M03 NE687M03 pa-12 08e-12 12e-9 10e-9 102e-12 2SC5436 NE687 S21E BF-104 AF1RC	PDF
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL NE687M03 SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 302.3e-18 MJC 0.53 BF 104 XCJC 0.27 NF 1.038 CJS VAF 10 VJS 0.75 IKF 0.370 MJS ISE 1e-6 FC	Original	NE687M03 3e-18 369e-3 93e-12 17e-3 415e-12 102e-12 5e-12 687M03 26e-1RAMETERS	PDF
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic	PDF
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77	PDF
ne3511s02 s2p Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan	Original	07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N	PDF
transistor marking T79 ghz Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority	Original	PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book	PDF
nec b1007 Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,	Original	NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G	PDF
marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817	PDF
m33 tf 130 Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539 Text: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP	Original	NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539	PDF
2SK2396A Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The	Original	P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor	PDF
UAA 1006 Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71 Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH	Original	D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71	PDF
SMD M05 sot Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial	Original	08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters	PDF

RF NPN POWER TRANSISTOR 2 GHZ Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M03 FEATURES OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	OCR Scan	NE687M03 NE687M03 RF NPN POWER TRANSISTOR 2 GHZ	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M03 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M03 NEW M03 PACKAGE: • S m allest tra n sisto r o u tlin e pa ckag e ava ila ble • Low pro file /0 .5 9 mm package height • Flat lead style fo r be tte r RF p e rfo rm an ce	OCR Scan	NE687M03 24-Hour	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE687M03 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M03 NEW M03 PACKAGE: • S m allest tra n sisto r o u tlin e pa ckag e ava ila ble • Low pro file /0 .5 9 mm package height • Flat lead style fo r be tte r RF p e rfo rm an ce	OCR Scan	NE687M03 687M03 26e-12 19e-12 08e-12 12e-9 10e-9 12e-9 24-Hour	PDF
uPA63 Abstract: UPA827TF UPA831TF NE685 Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening	OCR Scan	UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685	PDF