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    California Eastern Laboratories (CEL) NE696M01-T1

    RF TRANS NPN 6V 14GHZ SOT363
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    California Eastern Laboratories (CEL) NE696M01-A

    RF TRANS NPN 6V 14GHZ SOT363
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    California Eastern Laboratories (CEL) NE696M01-T1-A

    RF TRANS NPN 6V 14GHZ SOT363
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    California Eastern Laboratories (CEL) NE696M01

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    Quest Components NE696M01 1
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    NEC Electronics Group NE696M01

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    Quest Components NE696M01 636
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    NE696M01 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE696M01 California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE696M01 Unknown Original PDF
    NE696M01 NEC Semiconductor Selection Guide Original PDF
    NE696M01-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT-363 Original PDF
    NE696M01-T1 California Eastern Laboratories NPN Silicon High Frequency Transistor Original PDF
    NE696M01-T1 California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 2GHZ SOT-363 Original PDF
    NE696M01-T1 NEC NPN silicon high frequency transistor. Original PDF
    NE696M01-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE696M01-T1-A California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

    NE696M01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 4047

    Abstract: bf 695 NE685 NE696M01 NE696M01-T1 S21E IB 6420 opt 300 lex m01 001
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz


    Original     		PDF NE696M01 NE696M01 NE685) OT363 15e-9 58e-9 4e-12 18e-12 696M01 IC 4047 bf 695 NE685 NE696M01-T1 S21E IB 6420 opt 300 lex m01 001

    Transistor MJE 5332

    Abstract: Transistor 5332 lex m01 001 transistor kf 469 NE696M01 NE696M01-T1 S21E f 9368 IC 4047 BE transistor ne696m01
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW 2.1 ± 0.1 1.25 ± 0.1 HIGH GAIN:


    Original     		PDF NE696M01 NE696M01 15e-9 58e-9 4e-12 18e-12 696M01 24-Hour Transistor MJE 5332 Transistor 5332 lex m01 001 transistor kf 469 NE696M01-T1 S21E f 9368 IC 4047 BE transistor ne696m01

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE696M01 SCHEMATIC LCX 0.05pF COLLECTOR LBX LB 0.15nH 1.3nH CCB Q1 0.58nH CCE BASE 0.15pF CCE_PKG 0.5pF CBE_PKG LE 0.22nH 0.13pF LEX 0.15nH EMITTER BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 7e-16


    Original     		PDF NE696M01 7e-16 1e-13 4e-12 18e-12 696M01 05e-12 15e-12 22e-9

    NE685

    Abstract: NE696M01 NE696M01-T1 S21E lex m01 001
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz


    Original     		PDF NE696M01 NE696M01 NE685) OT363 15e-9 58e-9 4e-12 18e-12 696M01 NE685 NE696M01-T1 S21E lex m01 001

    nec K 3570

    Abstract: bf 695 bjt 522 NE685 NE696M01 NE696M01-T1 S21E OF BJT 547 ikr 251 lex m01 001
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz • 6 PIN SMALL MINI MOLD PACKAGE


    Original     		PDF NE696M01 NE696M01 NE685) OT363 4e-12 18e-12 696M01 nec K 3570 bf 695 bjt 522 NE685 NE696M01-T1 S21E OF BJT 547 ikr 251 lex m01 001

    IC 7107

    Abstract: IB 6410 NE685 NE696M01 NE696M01-T1 NE696M01-T1-A S21E lex m01 001
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz • 6 PIN SMALL MINI MOLD PACKAGE


    Original     		PDF NE696M01 NE696M01 NE685) OT363 IC 7107 IB 6410 NE685 NE696M01-T1 NE696M01-T1-A S21E lex m01 001

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    low noise, hetero junction fet

    Abstract: NE76038 UPB1506 NE721S01 UPC2711 2,5GHz oscillator Prescalers NE329S01 NE429M01 NE696M01
    Text: DBS Receiver NEW! NEW! NE429M01 Hetero Junction FET NE76038 MESFET • 6 pin super minimold package • Available on tape and reel • Low cost plastic package • Available on tape and reel UPC2711/12TB IF Amplifiers • Now available in smaller, lower cost SOT-363 packages


    Original     		PDF NE429M01 NE76038 UPC2711/12TB OT-363 NE696M01 NE329S01 NE721S01 UPC2781GR 520MHz 20MHz low noise, hetero junction fet NE76038 UPB1506 NE721S01 UPC2711 2,5GHz oscillator Prescalers NE329S01 NE429M01 NE696M01

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    HS350

    Abstract: NE696M01 VP215 K3140
    Text: DATA SHEET BIPOLAR ANALOG + DIGITAL INTEGRATED CIRCUIT µPB1008K REFERENCE FREQUENCY 27.456 MHz, 2ndIF FREQUENCY 132 kHz RF/IF FREQUENCY DOWN-CONVERTER + PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER DESCRIPTION The µPB1008K is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion


    Original     		PDF PB1008K PB1008K 36-pin HS350 NE696M01 VP215 K3140

    transistor 433 Mhz

    Abstract: UPC8116GR "Bipolar Transistor" uPC8116 Low Noise uhf transistor 1817 transistor 315MHZ SAW rf 433mhz NE696M01 NE85630
    Text: Keyless Entry, Home Security, UHF Remote NEW! NE85630 Bipolar Transistor UPC8116GR IF Receiver IC • Low cost: 16¢ in production quantities • 15dB Gain @ 450MHz • 1.0dB Noise Figure @ 450MHz • Miniature 1.25 X 2.0mm package 315 MHz 433 MHz • 100 – 500MHz Broadband Operation


    Original     		PDF NE85630 UPC8116GR 450MHz 500MHz -100dBm NE696M01 UPB1004GS UPC2746TB OT-363 transistor 433 Mhz UPC8116GR "Bipolar Transistor" uPC8116 Low Noise uhf transistor 1817 transistor 315MHZ SAW rf 433mhz NE696M01

    T-95

    Abstract: diode t95 T95 Diode NE696M01 M01 marking
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. M01 TOP VIEW 2.1 ± 0.1 1.25 ± 0.1 1 2.0 ± 0.2 1.3 2 T95 0.65 3 6 0.2 All Leads 5 4 SIDE VIEW DOT ON BACK SIDE 0.9 ± 0.1 0.7 +0.10


    Original     		PDF NE696M01 24-Hour T-95 diode t95 T95 Diode NE696M01 M01 marking

    UPA827TF

    Abstract: UPA833TF NE685 UPA814T
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01


    OCR Scan     		PDF NE696M01 NE698M01 NE699M01 UPA806T UPA807T UPA808T UPA809T UPA814T NE685 NE686 UPA827TF UPA833TF

    cd 1191 cb

    Abstract: ic CD 4047 transistor kf 469 lex m01 001 Transistor MJE 5332 transistor BF 509 Transistor BF 479 Transistor 5332
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • NE696M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 HIGH fT: 14 GHz TYP at 3 V, 10 mA TO P VIEW • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz — • HIGH GAIN: • *— 1.25 + 0.1 - *


    OCR Scan     		PDF NE696M01 NE696M01 OT-363 OT-23 696M01 05e-12 15e-12 22e-9 5e-12 cd 1191 cb ic CD 4047 transistor kf 469 lex m01 001 Transistor MJE 5332 transistor BF 509 Transistor BF 479 Transistor 5332

    ic CD 4047

    Abstract: lex m01 001 ha 431 transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE696M01 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M01 HIG H fT: 14 GHz TYP at 3 V, 10 mA TOP VIEW LOW N O IS E F IG U R E : NF = 1.6 dB TYP at 2 GHz - HIG H G A IN : •— 1.25 + 0.1-»


    OCR Scan     		PDF NE696M01 NE696M01 NE685) OT363 05e-12 15e-12 22e-9 5e-12 13e-12 15e-9 ic CD 4047 lex m01 001 ha 431 transistor

    cd 1191 cb

    Abstract: lex m01 001
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS HIGH fT : Units in mm PACKAGE OUTLINE M01 14 G Hz T Y P at 3 V, 10 mA LOW NOISE FIGURE: TOP VIEW IMF = 1 .6 dB TYP at 2 GHz — HIGH GAIN: 2.1 ± 0.1 - -1.25 ± 0 .1 -*


    OCR Scan     		PDF NE696M01 NE696M01 NE685) OT363 7e-16 1e-13 4e-12 18e-12 696M01 cd 1191 cb lex m01 001

    UPA802T

    Abstract: BD304 NE02132
    Text: Low Noise Bipolar Transistors ' •TV#’ VCE V S x n l* Ic TYP (mA) (dB) * VIP Hn te TYP MAX (WAJ Package Pfcg. Faxon Dwnand ücloaning Dee No. DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 3 .5 7.5 8.0 120 35 (SOT-363) S06 D MEVO UPA801T 2.0 3 7 1.2 -


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T OT-363) BD304 NE02132