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    NJ30L Search Results

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    NJ30L Price and Stock

    OMRON Industrial Automation WLNJ30LDN

    SWITCH SNAP ACTION SPDT 10A 125V
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    DigiKey WLNJ30LDN Bulk 11 1
    • 1 $152.7
    • 10 $126.539
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    Master Electronics WLNJ30LDN
    • 1 $160.29
    • 10 $153.18
    • 100 $149.6
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    OMRON Industrial Automation WLNJ-30LD

    SWITCH SNAP ACTION SPDT 10A 125V
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    OMRON Industrial Automation WLNJ30LEN

    SWITCH FLX ROD MW COIL SPR NEON
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    DigiKey WLNJ30LEN Bulk 1
    • 1 $214.55
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    Master Electronics WLNJ30LEN
    • 1 $154.46
    • 10 $147.61
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    Halo Electronics Inc TG10G-S105NJ30LF

    ISO MOD 10G 5CH 24P SMD
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    DigiKey TG10G-S105NJ30LF Tube 280
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    Avnet Americas TG10G-S105NJ30LF Tube 14 Weeks 280
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    Mouser Electronics TG10G-S105NJ30LF
    • 1 $20.05
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    • 100 $10.57
    • 1000 $6.18
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    New Advantage Corporation TG10G-S105NJ30LF 560 1
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    Halo Electronics Inc TG10G-S105NJ30LFTR

    ISO MOD 10G 5CH 24P SMD T/R
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    DigiKey TG10G-S105NJ30LFTR Reel 300
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    Avnet Americas TG10G-S105NJ30LFTR Reel 300
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    Mouser Electronics TG10G-S105NJ30LFTR
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    Find more NJ30L price and stock on Findchips.com

    NJ30L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5911

    Abstract: 2N5912 IFN5911 IFN5912 SMP5911 SMP5912
    Text: Databook.fxp 1/13/99 2:09 PM Page F-16 F-16 01/99 NJ30L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts


    Original     		NJ30L 2N5911, 2N5912 IFN5911, IFN5912 SMP5911 SMP5912 2N5911 2N5912 IFN5911 IFN5912 SMP5911 SMP5912 PDF

    2N6449

    Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
    Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original     		2N3821, 2N3822 2N3821 2N6449 MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116 PDF

    IFN5912

    Abstract: IFN5911 NJ-30
    Text: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation


    Original     		IFN5911, IFN5912 IFN5911 IFN5912 IFN5911 NJ-30 PDF

    2N5912

    Abstract: 2N5911 B-23 SMP5911 SMP5912 NJ-30
    Text: Databook.fxp 1/14/99 11:31 AM Page B-23 B-23 01/99 2N5911, 2N5912 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Total Device Power Dissipation


    Original     		2N5911, 2N5912 2N5911 NJ30L NJ36D SMP5911, SMP5912 2N5912 2N5911 B-23 SMP5911 SMP5912 NJ-30 PDF

    2n5485 equivalent transistor

    Abstract: transconductance 2N5485 2N4416 equivalent 2N5485 interfet 2N4416 2N4416A 2N5484 2N5486 SMP4416
    Text: Databook.fxp 1/14/99 11:30 AM Page B-14 B-14 01/99 2N4416, 2N4416A N-Channel Silicon Junction Field-Effect Transistor ¥ Mixers ¥ VHF Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Dissipation


    Original     		2N4416, 2N4416A 2N4416 O-226AB O-92/18) 2n5485 equivalent transistor transconductance 2N5485 2N4416 equivalent 2N5485 interfet 2N4416 2N4416A 2N5484 2N5486 SMP4416 PDF

    SMP5911

    Abstract: SMP5912
    Text: Databook.fxp 1/14/99 11:32 AM Page B-64 B-64 01/99 SMP5911, SMP5912 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Wideband Differential Amplifiers At 25°C free air temperature: SMP5911 SMP5912 Static Electrical Characteristics Min Min Gate Source Breakdown Voltage


    Original     		SMP5911, SMP5912 SMP5911 NJ30L SMP5911 SMP5912 PDF

    CD860

    Abstract: IFN860 NJ3600L IF3602 IFN5911 IFN5912
    Text: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation


    Original     		IFN5911, IFN5912 IFN5911 CD860 IFN860 NJ3600L IF3602 IFN5911 IFN5912 PDF

    Untitled

    Abstract: No abstract text available
    Text: B 47 9 -9 7 IFN5911, IFN5912 N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25eC icicpe * u « n r a . » n m .-n -n r.n -. . . Continuous Forward Gate Current Continuous Device Power Dissipation • WIDEBAND DIFFERENTIAL AMPLIFIERS


    OCR Scan     		IFN5911, IFN5912 FN5911 IFN9912 NJ30L 00G07b7 PDF

    Untitled

    Abstract: No abstract text available
    Text: B 64 9-97 SMP 5911, SMP 5912 m jÄTN ^H ÄN N ETsinCO N TÜ N CTlO N m ELD ^FFK^R^ • WIDEBAND DIFFERENTIAL AMPLIFIERS SMP5011 At 25 °C free air temperature: Min Static Electrical Characteristics Gate Source Breakdown Voltage V b r g s s Gate Reverse Current


    OCR Scan     		SMP5011 NJ30L SMP5912 PDF

    Untitled

    Abstract: No abstract text available
    Text: B 23 9 -9 7 2N5911, 2N5912 DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • WIDEBAND DIFFERENTIAL AMPLIFIERS Absolute maximum ratings at TA = 25°C Continuous Forward Gate Current 50 mA Total Device Power Dissipation 500 mW Power Derating 4 mW°C


    OCR Scan     		2N5911, 2N5912 2N9911 NJ30L 0GG07H3 PDF