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    NM28F040 Search Results

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    toshiba nand flash 16Mb

    Abstract: etox C1995 NM28F010 NM29N16 NOR FLASH AN920 NM28F040 NOR Flash read cycle AN-920 national
    Text: INTRODUCTION Flash technology is basically an outgrowth of EPROM technology Toshiba first invented Flash technology in the mid 80’s Intel quickly developed its own version based on a simpler cell structure ETOX EPROM Tunnel Oxide Cells based on the ETOX structure are the basis for the majority


    Original     		20-3A toshiba nand flash 16Mb etox C1995 NM28F010 NM29N16 NOR FLASH AN920 NM28F040 NOR Flash read cycle AN-920 national PDF

    I80486

    Abstract: boardsite PAL Decoder 16L8 NM28F010 16L8 27C010 C1995 MTD4P05 NM29N16 NM28N16
    Text: National offers two types of Flash Devices namely NOR type and NAND type The device densities ranging from 1 Mbit to 16 Mbit suited for various kinds of applications like BIOS code storage Solid state file storage Image file storage etc Some of the devices also feature Auto program


    Original     		20-3A I80486 boardsite PAL Decoder 16L8 NM28F010 16L8 27C010 C1995 MTD4P05 NM29N16 NM28N16 PDF

    NM28F040

    Abstract: 28f040
    Text: ADVANCE INFORMATION March 1994 NM28F040 4,194,304-Bit 512k X 8 CMOS FLASH General Description Features The NM28F040 is a 4,194,304-bit FLASH Electrically Eras­ able and Programmable Non-volatile Memory device. The NM28F040 features a single command for Read, Auto Chip


    OCR Scan     		NM28F040 304-Bit 304-bit 32-pin Cep-01451, 28f040 PDF