Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N04CHE, NP84N04DHE, NP84N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP84N04CHE,
NP84N04DHE,
NP84N04EHE
O-262
O-220AB
NP84N04DHE
NP84N04CHE
O-263
O-220AB)
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D1424
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N04CHE, NP84N04DHE, NP84N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP84N04CHE,
NP84N04DHE,
NP84N04EHE
NP84N04CHE
NP84N04DHE
NP84N04EHE
O-220AB
O-262
O-263
O-220AB)
D1424
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MP-25
Abstract: NP84N04CHE NP84N04DHE NP84N04EHE
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP84N04CHE, NP84N04DHE, NP84N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP84N04CHE,
NP84N04DHE,
NP84N04EHE
O-220AB
O-262
NP84N04DHE
NP84N04CHE
O-263
MP-25
NP84N04CHE
NP84N04DHE
NP84N04EHE
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MP-25
Abstract: NP84N04CHE NP84N04DHE NP84N04EHE TC 4410
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N04CHE, NP84N04DHE, NP84N04EHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
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NP84N04CHE,
NP84N04DHE,
NP84N04EHE
O-262
O-220AB
NP84N04DHE
NP84N04CHE
O-263
O-220AB)
MP-25
NP84N04CHE
NP84N04DHE
NP84N04EHE
TC 4410
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MP-25
Abstract: NP84N04CHE NP84N04DHE NP84N04EHE NEC 8502
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N04CHE, NP84N04DHE, NP84N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching
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NP84N04CHE,
NP84N04DHE,
NP84N04EHE
O-262
O-220AB
NP84N04DHE
NP84N04CHE
O-263
MP-25
NP84N04CHE
NP84N04DHE
NP84N04EHE
NEC 8502
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nec 84n04
Abstract: 84n04 NP84N04MHE NP84N04NHE NP84N04CHE NP84N04DHE NP84N04EHE NP84N04EHE-E1-AY NP84N04EHE-E2-AY NP84N04KHE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N04EHE, NP84N04KHE NP84N04CHE, NP84N04DHE, NP84N04MHE, NP84N04NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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NP84N04EHE,
NP84N04KHE
NP84N04CHE,
NP84N04DHE,
NP84N04MHE,
NP84N04NHE
NP84N04EHE-E1-AY
NP84N04EHE-E2-AY
NP84N04KHE-E2-AY
NP84N04KHE-E1-AY
nec 84n04
84n04
NP84N04MHE
NP84N04NHE
NP84N04CHE
NP84N04DHE
NP84N04EHE
NP84N04EHE-E1-AY
NP84N04EHE-E2-AY
NP84N04KHE
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4410
Abstract: MP-25 NP84N04CHE NP84N04DHE NP84N04EHE NP84N04KHE 101pulsed
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N04CHE,NP84N04DHE,NP84N04EHE,NP84N04KHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect PART NUMBER Transistor designed for high current switching applications.
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NP84N04CHE
NP84N04DHE
NP84N04EHE
NP84N04KHE
NP84N04CHE
O-262
NP84N04EHE
O-220AB
NP84N04DHE
O-263
4410
MP-25
NP84N04KHE
101pulsed
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PA1900TE
Abstract: 2sk3326 PA1770 d1340 2SK3298 UMOS-2
Text: PowerMOSFET by NEC: Well-built . Even the most brillant It’s the same in real life. intelligence needs a little muscle to put the ideas into practice. Conversely, sheer brute force won’t get you anywhere without some Let’s face it, brain or brainpower behind it.
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E-28007
I-20124
I-00139
GB-MK14
D13405EE3V0PF00
PA1900TE
2sk3326
PA1770
d1340
2SK3298
UMOS-2
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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84n04
Abstract: d14-240 nec 84n04 NP84N04CHE NP84N04DHE NP84N04EHE NP84N04EHE-E1-AY NP84N04EHE-E2-AY NP84N04KHE NP84N04KHE-E1-AY
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TO-252 MOSFET p channel
Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
Text: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering
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NL-5612
S-18322
F-78142
E-28007
NP-S-NEWS109V30
TO-252 MOSFET p channel
NP80N03CLE
NP80N03DLE
NP80N03ELE
NP80N04CHE
NP80N04DHE
NP80N04EHE
NP84N04CHE
NP84N04DHE
NP84N04EHE
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2SC5664
Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation
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D18597EJ1V0SG
2SC5664
2sc5292
NPN transistor SST 117
D1859
2sK4075 TRANSISTOR
2sc945
2SK4075
PC78L05J
2SK3918
2sk3326
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TO-252 MOSFET p channel
Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
Text: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive
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Q3/2001
NL-5612
S-18322
F-78142
E-28007
NP-S-NEWS071V50
TO-252 MOSFET p channel
nec 288
powermosfet Gate Drive
STR 1504
TO-262 MOSFET
NP80N03CLE
NP80N03DLE
NP80N04CHE
NP80N04DHE
NP84N04CHE
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