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    NTD4809N Search Results

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    NTD4809N Price and Stock

    Rochester Electronics LLC NTD4809NT4G

    POWER FIELD-EFFECT TRANSISTOR, 9
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    onsemi NTD4809NT4G

    MOSFET N-CH 30V 9.6A/58A DPAK
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    NTD4809NT4G 67
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    onsemi NTD4809NAT4G

    MOSFET N-CH 30V 9.6A/58A DPAK
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    Rochester Electronics LLC NTD4809NAT4G

    MOSFET N-CH 30V 9.6A/58A DPAK
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    onsemi NTD4809NHT4G

    MOSFET N-CH 30V 9.6A/58A DPAK
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    Quest Components NTD4809NHT4G 98
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    Rochester Electronics NTD4809NHT4G 142,167 1
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    NTD4809N Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTD4809N On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4809N-1G On Semiconductor NTD4809 - TRANSISTOR 9 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, IPAK-3, FET General Purpose Power Original PDF
    NTD4809N-1G On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK Original PDF
    NTD4809N-35G On Semiconductor NTD4809 - TRANSISTOR 9 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AD-01, IPAK-3, FET General Purpose Power Original PDF
    NTD4809N-35G On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4809NA-1G ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A IPAK Original PDF
    NTD4809NA-35G ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A IPAK Original PDF
    NTD4809NAT4G ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A DPAK Original PDF
    NTD4809NH On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4809NH-1G On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4809NH-35G On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4809NHT1G On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4809NHT4G On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4809NT4G On Semiconductor NTD4809 - TRANSISTOR 9 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AA-01, DPAK-3, FET General Purpose Power Original PDF
    NTD4809NT4G On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK Original PDF

    NTD4809N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4809NH NTD4809NH/D

    48 09ng

    Abstract: 4809ng mosfet 48 09ng 09ng 4809n mosfet on 09ng NTD4809NA-1G 09ng 040 48 369D
    Text: NTD4809NA Advance Information Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original
    PDF NTD4809NA NTD4809NA/D 48 09ng 4809ng mosfet 48 09ng 09ng 4809n mosfet on 09ng NTD4809NA-1G 09ng 040 48 369D

    09nhg

    Abstract: NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    PDF NTD4809NH NTD4809NH/D 09nhg NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG

    Untitled

    Abstract: No abstract text available
    Text: NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant


    Original
    PDF NTD4809N, NVD4809N NTD4809N/D

    mosfet 48 09ng

    Abstract: 09ng 48 09ng 4809ng 4809N
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original
    PDF NTD4809N NTD4809N/D mosfet 48 09ng 09ng 48 09ng 4809ng 4809N

    48 09ng

    Abstract: 4809ng 09ng mosfet 48 09ng NTD4809NT4G mosfet on 09ng 4809n 369D NTD4809N
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com RDS(on) MAX


    Original
    PDF NTD4809N NTD4809N/D 48 09ng 4809ng 09ng mosfet 48 09ng NTD4809NT4G mosfet on 09ng 4809n 369D NTD4809N

    09ng

    Abstract: 48 09ng mosfet on 09ng mosfet 48 09ng NTD4809NT4G 4809N 369D 4809ng 09ng 040 48 NTD4809N
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4809N NTD4809N/D 09ng 48 09ng mosfet on 09ng mosfet 48 09ng NTD4809NT4G 4809N 369D 4809ng 09ng 040 48 NTD4809N

    48 09NHG

    Abstract: 09nhg a/48 09NHG 369D NTD4809NH NTD4809NHT4G
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4809NH NTD4809NH/D 48 09NHG 09nhg a/48 09NHG 369D NTD4809NH NTD4809NHT4G

    48 09ng

    Abstract: 09ng 4809ng mosfet 48 09ng mosfet on 09ng
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4809N NTD4809N/D 48 09ng 09ng 4809ng mosfet 48 09ng mosfet on 09ng

    Untitled

    Abstract: No abstract text available
    Text: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH


    Original
    PDF NTD4809NH, NVD4809NH AEC-Q101 NTD4809NH/D

    48 09ng

    Abstract: 09ng
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4809N NTD4809N/D 48 09ng 09ng

    369D

    Abstract: NTD4809NH NTD4809NHT1G NTD4809NHT4G
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4809NH NTD4809NH/D 369D NTD4809NH NTD4809NHT1G NTD4809NHT4G

    48 09ng

    Abstract: 4809ng 09ng mosfet 48 09ng 4809N mosfet 85 09ng NTD4809NT4G 002 48 09ng mosfet on 09ng 369AD
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com RDS(on) MAX


    Original
    PDF NTD4809N NTD4809N/D 48 09ng 4809ng 09ng mosfet 48 09ng 4809N mosfet 85 09ng NTD4809NT4G 002 48 09ng mosfet on 09ng 369AD

    09ng

    Abstract: 4809ng mosfet 48 09ng 48 09ng mosfet on 09ng
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4809N NTD4809N/D 09ng 4809ng mosfet 48 09ng 48 09ng mosfet on 09ng

    48 09ng

    Abstract: 4809ng 09ng mosfet on 09ng 4809n NTD4809NT4G mosfet 48 09ng NTD4809N marking e3 NTD4809N-35G
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V(BR)DSS


    Original
    PDF NTD4809N NTD4809N/D 48 09ng 4809ng 09ng mosfet on 09ng 4809n NTD4809NT4G mosfet 48 09ng NTD4809N marking e3 NTD4809N-35G

    Untitled

    Abstract: No abstract text available
    Text: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH


    Original
    PDF NTD4809NH, NVD4809NH NTD4809NH/D

    48 09ng

    Abstract: 09NG 4809ng mosfet 48 09ng mosfet on 09ng 4809n mosfet on 48 09ng 369D 125C10 09ng 040 48
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original
    PDF NTD4809N NTD4809N/D 48 09ng 09NG 4809ng mosfet 48 09ng mosfet on 09ng 4809n mosfet on 48 09ng 369D 125C10 09ng 040 48

    09nhg

    Abstract: 48 09NHG 4809NH NTD4809NHT4G 369D NTD4809NH 4809NHG
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4809NH NTD4809NH/D 09nhg 48 09NHG 4809NH NTD4809NHT4G 369D NTD4809NH 4809NHG

    mosfet on 48 09ng

    Abstract: mosfet on 09ng 48 09ng 4809ng 09ng on 48 09ng 4809n mosfet 48 09ng 369D NTD4809N
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4809N NTD4809N/D mosfet on 48 09ng mosfet on 09ng 48 09ng 4809ng 09ng on 48 09ng 4809n mosfet 48 09ng 369D NTD4809N

    09nhg

    Abstract: 4809nhg 48 09NHG 369D NTD4809NH 4809NH NTD4809NH-1G
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original
    PDF NTD4809NH NTD4809NH/D 09nhg 4809nhg 48 09NHG 369D NTD4809NH 4809NH NTD4809NH-1G

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original
    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original
    PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    utx hqx

    Abstract: ps223 MOV 471K t3 15A 250V mst POT3319 SUSCON capacitor power supply ATX12v SCHEMATICS smd diode S4 58a ncp1396 ic ps223 equivalent
    Text: TND359/D Rev 0, Jan-09 High-Efficiency 255 W ATX Power Supply Reference Design Documentation Package 1 2009 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or


    Original
    PDF TND359/D Jan-09 IEC61000-3-2 NCP1654 NCP1396 NCP4302 NCP1587 NCP1027 NTD4809 MBR20L45 utx hqx ps223 MOV 471K t3 15A 250V mst POT3319 SUSCON capacitor power supply ATX12v SCHEMATICS smd diode S4 58a ic ps223 equivalent

    ncp5215

    Abstract: NCP5388 elektronik DDR D 2689 ncp5387 NTMFS4833 pwm 3 phase west lake capacitors 0808 DAC dac 0808
    Text: DO NOT PRINT - TRIM AREA No-Latch, Dual-Edge Modulation Vcore Controllers for VR11.0 and VR10.X Applications DO NOT PRINT - TRIM AREA The NCP5387 and NCP5382 are multi-phase buck controllers which combine differential voltage and current sensing, and adaptive voltage


    Original
    PDF NCP5387 NCP5382 BRD8025-3 BRD8025/D ncp5215 NCP5388 elektronik DDR D 2689 NTMFS4833 pwm 3 phase west lake capacitors 0808 DAC dac 0808