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Flip Electronics	NVMFS5832NLT1G		1,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NVMFS5832NL Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NVMFS5832NLT1G		On Semiconductor	NVMFS5832 - TRANSISTOR 40 V, 0.0072 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 488AA-01, SO-8FL, DFN5,6 PIN, FET General Purpose Power		Original	PDF
NVMFS5832NLT3G		On Semiconductor	NVMFS5832 - TRANSISTOR 40 V, 0.0072 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 488AA-01, SO-8FL, DFN5,6 PIN, FET General Purpose Power		Original	PDF
NVMFS5832NLWFT1G		On Semiconductor	NVMFS5832 - Power MOSFET 40V 120A 4.2 mOhm Single N?Channel SO-8FL Logic Level		Original	PDF
NVMFS5832NLWFT3G		On Semiconductor	NVMFS5832 - Power MOSFET 40V 120A 4.2 mOhm Single N?Channel SO-8FL Logic Level		Original	PDF

NVMFS5832NL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
V5832L Abstract: No abstract text available Text: NVMFS5832NL Product Preview Power MOSFET 40 V, 5 mW, 113 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified	Original	NVMFS5832NL AEC-Q101 NVMFS5832NL/D V5832L	PDF
V5832 Abstract: No abstract text available Text: NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable	Original	NVMFS5832NL AEC-Q101 NVMFS5832NL/D V5832	PDF
Untitled Abstract: No abstract text available Text: NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices*	Original	NVMFS5832NL AEC-Q101 NVMFS5832NL/D	PDF
V5832L Abstract: No abstract text available Text: NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices	Original	NVMFS5832NL NVMFS5832NL/D V5832L	PDF
V5832L Abstract: No abstract text available Text: NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5832NLWF − Wettable Flanks Product	Original	NVMFS5832NL NVMFS5832NLWF AEC-Q101 NVMFS5832NL/D V5832L	PDF
V5832 Abstract: NVMFS5832NL MW120A V5832L Text: NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices	Original	NVMFS5832NL AEC-Q101 25cable NVMFS5832NL/D V5832 MW120A V5832L	PDF