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    NX6342EP-AZ Renesas Electronics Corporation 310 nm AlGaInAs MQW-DFB Laser Diode for 10 Gb/s BASE-LR/LW Application Visit Renesas Electronics Corporation

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    Text: Preliminary Data Sheet NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 DESCRIPTION The NX6342EP is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


    Original     		NX6342EP NX6342EP R08DS0050EJ0100 IEEE802 PDF