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    IRFP250

    Abstract: d881 transistor IRFP250 D88FN2
    Text: F U IRFP250.251 P88FN2.M2 ? 30 AMPERES 200,150 VQLTS r DS ON = 0.085 n HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		IRFP250 D88FN2 50VQLTS 0-08S 00A//US, IRFP251/D88FM2 IRFP250/D88FN2 d881 transistor IRFP250 PDF