PA2464T1Q Search Results

PA2464T1Q Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
UPA2464T1Q-E1-AX		Renesas Electronics Corporation	N-Channel Mos Field Effect Transistor For Switching

PA2464T1Q Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet PA2464T1Q R07DS0189EJ0100 Rev.1.00 Dec 06, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2464T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2464T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for	Original	PA2464T1Q R07DS0189EJ0100 PA2464T1Q	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: Preliminary Data Sheet PA2464T1Q R07DS0189EJ0100 Rev.1.00 Dec 06, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2464T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2464T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for

Original

PA2464T1Q R07DS0189EJ0100 PA2464T1Q

PDF