PD424256
Abstract: ud41464 uPD41256-12
Text: N E C ELECTRONICS INC 3GE D • t.427525 OOSSltQ 2 ■ NEC MEMORY PRODUCTS Dynamic R A M s Maximum Power Dissipation |mW Accesi Time ns) Cycle Time (ns) Supply Voltage Standby Active Package (Note 1) Pins /PD41256-10 //PD41256-12 256K x 1 (page) NMOS 100
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uPD41256-10
uPD41256-12
uD41464-10
uPD41464-12
uPD421000-70
uP0421000-80
uPD421000-10
uPD421000-12
uPD42100
256Kx4
PD424256
ud41464
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PD41256
Abstract: JA-11
Text: ¡J PD41256 262,144 X 1-Bit Dynamic NMOS RAM rm W NEC Electronics Inc. Description The PD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel, silicon-gate process for high density, high performance,
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uPD41256
jiPD41256
144-word
JHPD412S6
PD41256
JA-11
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NEC d41256
Abstract: D41256 PD41256 UD41256
Text: /¿PD41256 262,144 X 1-BIT d y n a m ic n m o s r a m NEC Electronics Inc. Description T he /^PD41256 is a 262,144-word by 1-bit dynamic N M O S RAM designed to operate from a single + 5 -v o lt pow er supply. T h e negative voltage substrate bias is autom atically generated internally.
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uPD41256
PD41256
144-word
PD41256
//PD41256
NEC d41256
D41256
UD41256
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UPD41258G10
Abstract: UPD41254 upd41256l
Text: NEC N E C ELECTRONICS INC 72C D • b427525 DDObMMl 3 ■ SURFACE MOUNT DEVICES Introduction M em ory Surface mount technology SMT is an idea whose time has come. NEC anticipated the current trend and now offers an exceptionally broad choice of com ponents in suface mount packages. Four factors
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b427525
uPD41254L-12
uPD41254L-15
uPD41256L-12
uPD41256L-15
uPD41257L-12
uPD41257L--15
uPD41258G-10
uPD41258G-12
uPD41258G-15
UPD41258G10
UPD41254
upd41256l
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D41256
Abstract: 41256 NEC D41256 apd412 41256P PD41256 RX5A NPD412 D412 JJPD41256
Text: pP D 41256 262,144 X 1-Bit D y n a m ic NMOS RAM F U IC /W NEC E lectron ics Inc. D escription Pin Configurations The PD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,
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uPD41256
144-word
D41256
41256
NEC D41256
apd412
41256P
PD41256
RX5A
NPD412
D412
JJPD41256
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D41256
Abstract: 41256 ram 41256
Text: Y * ryÆ L W NEC Electronics Inc. PD41256 262,144 X 1-Bit Dynamic NMOS RAM Description Pin Configurations The PD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,
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uPD41256
144-word
D41256
41256 ram
41256
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30-pin simm memory
Abstract: 433 Mc MC-41256A9B MC-41256 30 pin simm SIMM 30-pin MC-41256A9-12 MC-41256A9-15 uPD41256 "30 pin simm"
Text: NEC M C -4 1 2 5 6 A 9 2 6 2 , 1 4 4 x 9 -B IT D Y N A M IC N M O S R A M M O D U LE NEC Electronics Inc. P R E L IM IN A R Y IN F O R M A T IO N Pin C o n fig u ra tio n s D escrip tio n The M C -41256A9 is a 262,144-word by 9 -b it NM OS d y n a m ic RAM m odule, designed to operate from a
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MC-41256A9
144-word
uPD41256
MC-41256A9
83-001979B
30-pin simm memory
433 Mc
MC-41256A9B
MC-41256
30 pin simm
SIMM 30-pin
MC-41256A9-12
MC-41256A9-15
"30 pin simm"
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424256
Abstract: nec 424256 upd42256 424256 memory JRC 062 062 JRC 42256 41256 dram NEC 421000 mC 421000
Text: SEC M C -42512A 36, -424512A 36 524,288 X 36-B it D ynam ic CM OS RAM Module NEC Electronics Inc. Prelim inary Information A p ril 1992 Description Pin Configuration T h e M C -4 2 5 1 2 A 3 6 a n d th e M C -4 2 4 5 1 2 A 3 6 a re d y n a m ic RAM m o d u le s o rg a n iz e d as 5 2 4 ,2 8 8 w o rd s by 3 6 bits
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-42512A
-424512A
72-Pin
424256
nec 424256
upd42256
424256 memory
JRC 062
062 JRC
42256
41256 dram
NEC 421000
mC 421000
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nec 424256
Abstract: 424256 41256 dram 42256 41256 424256 pin out 424256 memory
Text: MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module Lylj W NEC Electronics Inc. Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynam ic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single + 5 -vo lt power
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MC-42512A36,
-424512A36
36-Bit
MC-42512A36
MC-424512A36
MC-424S12A36WF.
-424512A36
-424512A
nec 424256
424256
41256 dram
42256
41256
424256 pin out
424256 memory
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Untitled
Abstract: No abstract text available
Text: SEC MC-41256A4 262,144 x 4-BIT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. PRELIMINARY INFORMATON Description Pin Configuration T he M C -41256A4 is a 262,144-w ord by 4 -b it NM OS d y n a m ic RAM m odule, d e signed to o p erate fro m a sin g le + 5 V pow er supply. A dvanced d yn a m ic c irc u itry ,
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MC-41256A4
-41256A4
144-w
22-Pin
MC-412S6A4A
C-41256A4
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424256 pin out
Abstract: TIO 872-M 424256 pd42256 nec 424256 DG342
Text: blE ]> • bM27525 D O a m 1!? DMT MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. N E C 0. 3 - ELECTRONICS INC Description Pin Configuration T h e M C -4 2 5 1 2 A 3 6 a n d th e M C -4 2 4 5 1 2 A 3 6 a re d y n a m ic
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bM27525
MC-42512A36
MC-424512A36
Q03M210
MC-42512A36,
-424512A36
72-Pin
MC-424512A
36BH/FH)
b4E75E5
424256 pin out
TIO 872-M
424256
pd42256
nec 424256
DG342
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Untitled
Abstract: No abstract text available
Text: N E C E L E C TR ON I CS INC Tfl fci457S2S OOlESlfi T | \TfTCl T MC-411000A1 1,048,576 x 1-BIT d y n a m ic n m o s r a m m o d u le NEC Electronics Inc. PRELIM INARY INFORMATION April 1986 Pin Configuration D escription Th e MC-411000A1 is a 1,048,576-word by 1-bit N M O S
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fci457S2S
MC-411000A1
576-word
yuPD41256s
/uPD41256s
NECEL-000592-0486
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MN12261
Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Text: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating
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N1224
16-DIP
18-DIP
SO-18D
14-DlP
MN12261
MN1225
N12c
M5M4400
256K RAM HM62256
47464
mn4464
n1224
MN41256A
44256 ram
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256KD
Abstract: No abstract text available
Text: NEC M C -41256A 5 2 6 2 ,1 4 4 x 5-B IT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. PRELIMINARY INFORMATION /^ q k Í ^ April 1986 c * sp j>Mrv> Pin Configuration Description T h e M C -4 1 2 5 6 A 5 is a 2 62,144-w o rd by 5 -b it N M O S d yn am ic R A M m odule, designed to o p erate from a
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MC-41256A5
144-word
/PD41256
256KD
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Untitled
Abstract: No abstract text available
Text: NEC M C -4 1 2 5 6 A 9 2 6 2 ,1 4 4 X 9-B IT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The MC-41256A9 is a 262,144-word by 9-bit NMOS dynam ic RAM module, designed to operate from a single +5 V power supply. Advanced dynamic circuitry,
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MC-41256A9
144-word
eight/jPD41256
1664B
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411000
Abstract: MC-411000A1-12 MC-411000A1-15 nec 442
Text: NEC M C -4 1 1 0 0 0 A 1 1 ,0 4 8 ,5 7 6 x 1 -B IT D Y N A M IC N M O S R A M M O D U LE NEC Electronics Inc. P R E L IM IN A R Y IN F O R M A T IO N Pin C o n fig u ra tio n D escrip tio n T he MC-411000A1 is a 1,048,576-word by 1 -b it NMOS d yn a m ic RAM m odule, designed to operate fro m a
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MC-411000A1
576-word
/jPD41256s
t/PD412
411000
MC-411000A1-12
MC-411000A1-15
nec 442
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MC-411000A1-12
Abstract: MC-411000A1-15 PD41256S 411000
Text: Single— Copy- m c -4 h o o o a i SEC 1 ,0 4 8 ,5 7 6 x 1-BIT NEC Electronics Inc. H a n d l e W jt|? X !!£ l,£ IC N M 0 S R A M M 0 D U L E P R E L IM IN A R Y INFORMATION A p r il is m Pin Configuration Description The MC-411000A1 is a 1,048,576-word by 1-bit NMOS
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MC-411000A1
576-word
/yPD41256s
//PD41256s
EL-000592-0486
MC-411000A1-12
MC-411000A1-15
PD41256S
411000
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D41256
Abstract: D41256 - 12 NEC D41256 D41256 -15 d41256-10 d41256-80 HPD41256C-80
Text: /PD41256 262,144 X 1-Bit Dynamic NMOS RAM W Æ li W NEC Electronics Inc. Description Pin Configurations The ¿¿PD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated w ith a double polylayer, N-channel,
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uPD41256
PD41256
144-word
JJPD41256
JIPD41256
D41256
D41256 - 12
NEC D41256
D41256 -15
d41256-10
d41256-80
HPD41256C-80
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pd41256
Abstract: No abstract text available
Text: p P D 4 1 2 5 6 M -J W NEC Electronics Inc. Description The PD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single +5-volt power supply and fabricated with a double polylayer, N-channel, silicon-gate process for high density, high performance,
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uPD41256
144-word
JUPD41256
pPD41256
JHPD41256
pd41256
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Untitled
Abstract: No abstract text available
Text: W7 S * LU H i W PD41256 262,144 X 1-Bit NEC Electronics Inc. Dynamic NMOS RAM Description Pin Configurations The /PD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,
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fiPD41256
/xPD41256
144-word
16-Pin
pPD41256
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
KM44C258
al 232 nec
TC55B4257
MB832001
NM9306
eeprom Cross Reference
D41264
TC5116100
HN28C256
NM9307
oki cross reference
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C-41256A8
Abstract: No abstract text available
Text: M it W MC-41256A8 262,144 X 8-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A8 is a 262,144-word by 8 -bit NMOS RAM module designed to operate from a single + 5-volt power supply. Advanced dynamic circuitry, including a
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MC-41256A8
30-Pin
144-word
C-41256A8
/PD41256
MC-41256A8
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UD42256
Abstract: 42256
Text: NEC MC-42256A36, -424256A36 262,144 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Pin Configuration Description The MC-42256A36 and the MC-424256A36 are dynamic RAM modules organized as 264,144 words by 36 bits and designed to operate from a single +5-volt power
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MC-42256A36,
-424256A36
36-Bit
MC-42256A36
MC-424256A36
MC-424256A
-424256A36
UD42256
42256
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