E80276
Abstract: PM75CLB060
Text: 三菱半導体〈インテリジェントパワーモジュール〉 PM75CLB060 フラットベース形 絶縁形 PM75CLB060 特長 ➀ 第 5 世代 1µm ルール IGBT（CSTBT）チッ プ採用 Vce sat (@Tj=125℃)=typ.1.5V ➁ CSTBTチップのTj検出による過熱保護を
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PM75CLB060
600V75A
E80276
E80271
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PM75CLB060
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB060 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
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PM75CLB060
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Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB060 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
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Text: PM75CLB060 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod L-Series Three Phase IGBT Inverter 75 Amperes/600 Volts A D E F G L AB (4 PLACES) H J K J J K K V V TERMINAL CODE M 1 VUPC K 2 UFO 3 UP 4 VUP1 N
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pm75clb060
Abstract: E80276
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB060 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
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pm75clb060
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Abstract: No abstract text available
Text: PM75CLB060 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod L-Series Three Phase IGBT Inverter 75 Amperes/600 Volts A D E F G L AB (4 PLACES) H J K J J K K V V TERMINAL CODE M 1 VUPC K 2 UFO 3 UP 4 VUP1 N
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PM75CLB060
Abstract: fwdi IGBT
Text: PM75CLB060 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod L-Series Three Phase IGBT Inverter 75 Amperes/600 Volts A D E F G L AB (4 PLACES) H J K J J K K V V TERMINAL CODE M 1 VUPC K 2 UFO 3 UP 4 VUP1 N
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PM75CLB060
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fwdi IGBT
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB060 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
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Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB060 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
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25A 1200V
Abstract: PM100RLA120 PM150CLA120 PM75CLA120 PM75CLA060 PM75CLB120 transistor 600V 75A PM100CLA060 PM150CLA060 PM200CLA060
Text: Powerex L-Series IPM Grid 7/3/2003 VCES 25A 1200V PM25CLA120 PM25CLB120 600V 1200V Seven-Pack Six-Pack 600V Config *click on the products for additional information PM25RLA120 PM25RLB120 50A 75A 100A 150A 200A 300A PM50CLA060 PM50CLB060 PM75CLA060 PM75CLB060
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PM75CLA060
PM75CLB060
PM100CLA060
PM150CLA060
PM200CLA060
PM300CLA060
PM50CLA120
PM50CLB120
25A 1200V
PM100RLA120
PM150CLA120
PM75CLA120
PM75CLA060
PM75CLB120
transistor 600V 75A
PM100CLA060
PM150CLA060
PM200CLA060
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DF10-31S-2DSA
Abstract: transistor free Mitsubishi Electric IGBT MODULES PM150RLA060 igbt testing procedure PM450CLA120 calculation of IGBT snubber pm600cla060 Mitsubishi IPM module PM100CLA060
Text: IPM L-series Application Note Dec. 2007 Mitsubishi IPM-series Application Note Index Index 1. IPM L-series Features 2. Product Line-up 3. Term Explanation 4. Numbering System 5. Structure 6. Correct and Safety Use of Power Module 7. Reliability 7-1. Introduction
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DF10-31S-2DSA
Abstract: KS-609 shinetsu ks-609 igbt trigger by opto pm600cla120 IPM Inverter KS-609 technical data MITSUBISHI ipm MODULES ps shinetsu G746 viscosity df10-31s
Text: Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 L-Series Power Devices Application Note Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Table of Contents Application Information 1.0
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PM75CLA060
DF10-31S-2DSA
KS-609
shinetsu ks-609
igbt trigger by opto
pm600cla120
IPM Inverter
KS-609 technical data
MITSUBISHI ipm MODULES ps
shinetsu G746 viscosity
df10-31s
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PS51259-AP
Abstract: induction heating cooker IGBT MOTOR CONTROL RM250HA-10F induction cooker free circuit diagram rm30tna-h PS5 1020 CM400E4G-130H pwm INVERTER welder rm450ha-5h
Text: Power Devices General Catalog The search for state-of-the-art technology has landed on energy-savings and environmental protection. Mitsubishi Power Devices meets demands for energy-saving and eco-friendly semiconductors with advanced technology and a diversified product lineup. Industrial use,
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16P4X
300mil
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induction heating cooker
IGBT MOTOR CONTROL
RM250HA-10F
induction cooker free circuit diagram
rm30tna-h
PS5 1020
CM400E4G-130H
pwm INVERTER welder
rm450ha-5h
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RM15TB-H
Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;
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CM400HA
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CM150DY
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CM300DY
CM400DY
CM600DY
RM15TB-H
RM10TB-H
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rd00hhf1
rm30tn-h
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ps11023-a
PS11023
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