LN62S
Abstract: PN120S PNZ120S
Text: Phototransistors PNZ120S PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an optical controller Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Wide directional sensitivity for easy use
|
Original
|
PDF
|
PNZ120S
PN120S)
LN62S
PN120S
PNZ120S
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type Unit: mm For optical control systems 3.75±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use
|
Original
|
PDF
|
2002/95/EC)
PNZ120S
PN120S)
|
PN120S
Abstract: PNZ120S
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type For optical control systems • Features High sensitivity Wide directivity characteristics for easy use Fast response: tr , tf = 3 s (typ.)
|
Original
|
PDF
|
2002/95/EC)
PNZ120S
PN120S)
PN120S
PNZ120S
|
Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ120S PN120S Silicon planar type Unit: mm For optical control systems 3.75±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use • Fast response: tr , tf = 3 µs (typ.) • Signal mixing capability using base pin
|
Original
|
PDF
|
PNZ120S
PN120S)
CTRLR102-001
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type Unit: mm For optical control systems 4.1±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use
|
Original
|
PDF
|
2002/95/EC)
PNZ120S
PN120S)
|
Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ120S PN120S Silicon planar type Unit: mm For optical control systems 4.1±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use • Fast response: tr , tf = 3 µs (typ.) • Signal mixing capability using base pin
|
Original
|
PDF
|
PNZ120S
PN120S)
|
Untitled
Abstract: No abstract text available
Text: Phototransistors PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an optical controller M Di ain sc te on na tin nc ue e/ d Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Wide directional sensitivity for easy use
|
Original
|
PDF
|
PN120S
LN62S
2856K)
|
LN62S
Abstract: PN120S
Text: Phototransistors PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 For optical control systems 12.5 min. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo
|
Original
|
PDF
|
PN120S
LN62S
PN120S
|
Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN62S GaAs Infrared Light Emitting Diode Unit : mm For optical control systems ø3.0±0.15 M Di ain sc te on na tin nc ue e/ d 3.75±0.3 2.0±0.2 This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers.
|
Original
|
PDF
|
LN62S
PN120S
|
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PDF
|
PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
|
mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PDF
|
PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
|
Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN62S G aAs Infrared Light Em itting Diode For optical control systems This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers. • Features • High-power output, high-efficiency : PQ = 3.5 mW typ.
|
OCR Scan
|
PDF
|
LN62S
PN120S
|
PN120S
Abstract: LN62S
Text: Panasonic Phototransistors PN120S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an optical controller • Features • H igh sensitivity • W ide directio n al sensitivity fo r easy use • F a st re sp o n se : tr, tj = 3 |xs typ.
|
OCR Scan
|
PDF
|
PN120S
LN62S
OvV30
/\X\Vi20
PN120S
|
Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN62S G aAs Infrared Light Emitting Diode For optical control systems This product can be com bined with various types o f silicon photodetectors such as the PN120S to form optical controllers. • Features • H igh-pow er output, high-efficiency : P Q = 3.5 m W typ.
|
OCR Scan
|
PDF
|
LN62S
PN120S
|
|
|
Untitled
Abstract: No abstract text available
Text: Panasonic Phototransistors PN120S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an optical controller • Features • • • • H igh sensitivity W ide directional sensitivity for easy use Fast response : tr, % = 3 jlls typ.
|
OCR Scan
|
PDF
|
PN120S
LN62S
|
Infrared Emitting Diode
Abstract: panasonic 8090 LN62S PN120S GaAs 850 nm Infrared Emitting Diode
Text: Panasonic Infrared Light Emitting Diodes LN62S GaAs Infrared Light Emitting Diode For optical control systems This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers. • Features • High-power output, high-efficiency : P0 = 3.5 mW typ.
|
OCR Scan
|
PDF
|
LN62S
PN120S
Infrared Emitting Diode
panasonic 8090
LN62S
GaAs 850 nm Infrared Emitting Diode
|
zjy 2b
Abstract: IT9010 LN62S PN120S PN121S PN123S T-9856 UCA 1400
Text: PANASONIC INDL/ELEK-CSEMI} 7SC D | bT3SflSM □ O O c!flfll4 fl | _ 6 9 3 2 8 52 P ANASONIC IN D L * ELECTRONIC 72C 0 9 8 8 4 D PN120S PN120S I- H I - G l '> ij u y NPN rhh / S i NPN Phototransistor Optical Control Systems LN62S £<7 Mfrnt>-&T'7i-s h -f Matched
|
OCR Scan
|
PDF
|
bT32flS4
PN120S
LN62S
zjy 2b
IT9010
LN62S
PN120S
PN121S
PN123S
T-9856
UCA 1400
|
transistor 30021
Abstract: PNA4602M
Text: Photo Detectors/Photo S3 • PIN Photodiodes for AF, CD, VD, Optical Communications, Control and Space Transmission Flat (Clear) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) PSD Flat (Visible light
|
OCR Scan
|
PDF
|
PN3206
PN312D
PN322D
PN3112
PN3108
PNA3201F
PN3405
PN316K2
PN3116
PN3624K
transistor 30021
PNA4602M
|
TO44 package
Abstract: 09846 09843 LN61C LN62S LN65 PN120S infrared 950nm PU160 PANASONIC FL
Text: PANASONIC INDL/ELEK-CSEMI}. 72C D | t.=]32fi54 DOCHaqS 3 | 6932852 PANASONIC IN DL * E L E C T R O N IC 7T 7 K E U ? h D - " J O ? ! W 72C 0 9 84 2 _ ~ X D _ IN61C LN61C T- G aA s K / G a A s Infrared Light Em itting Diode Optical Control Systems
|
OCR Scan
|
PDF
|
LN61C
LN61C
950nm
100Hz,
75max.
10iis
TO44 package
09846
09843
LN62S
LN65
PN120S
infrared 950nm
PU160
PANASONIC FL
|
1k88
Abstract: PN3634 1R88 6N3P PNA4602M
Text: I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control II A p tr.tl e min. typ. lyp. typ. ( m A) (nm) (ns) (deg) PN3104 Flat (Clear) PSD 30 2 2 2 940 8 a 65 PN3106(N) Flat (Clear) PSD 30 2 13 940 5 u Flat (Clear) 2 PN3206
|
OCR Scan
|
PDF
|
PN3104
PN3106
PN3206
PN312D
PFES04-1N
PFOS04-2N
PN322D
PN3105
PN3112
1k88
PN3634
1R88
6N3P
PNA4602M
|
PN126S
Abstract: ON1503 PN7103
Text: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10
|
OCR Scan
|
PDF
|
PN312C
PN312E
PN3104
PN3106
PN3206
PN312D
PN322D
PN3105
PN3112
PN3108
PN126S
ON1503
PN7103
|
PN7103
Abstract: pf204 mr03 C302 C5031 PNA4602M ON1501 PN334 PN106 PNA4602
Text: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. Flat (Clear) 2 division PF204-3 PN3104 Flat (Clear) PSD PN3106(N) tr.tf typ. (ns) typ 10 PF004-5 22 940 8 Flat (Clear) PSD
|
OCR Scan
|
PDF
|
PN101/102*
PN101F/102F*
ML02-1/
ML03-1
MF02-1/
PN312E
PF204-3
PN3104
PFU04-5
PN106*
PN7103
pf204
mr03
C302
C5031
PNA4602M
ON1501
PN334
PN106
PNA4602
|
bt35f
Abstract: mf03 c PNA4602M
Text: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. PN334 Flat (Clear) 2 division Flat (Clear) PSD Flat (Clear) PSD Flat (Clear) 2 division Flat (Viable light cut) 2 division
|
OCR Scan
|
PDF
|
PN312E
PN3104
PN3106
PN3206
PN312D
PN322D
PN3105
PN3112
PN3108
PN3107
bt35f
mf03 c
PNA4602M
|
AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
|
OCR Scan
|
PDF
|
MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
|
