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    PSA64 Search Results

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    PSA64 Price and Stock

    Central Semiconductor Corp MPSA64-PBFREE

    TRANS PNP DARL 30V 0.5A TO92-3
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    DigiKey MPSA64-PBFREE Bulk 4,204 1
    • 1 $0.77
    • 10 $0.48
    • 100 $0.77
    • 1000 $0.21263
    • 10000 $0.15769
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    onsemi MPSA64

    TRANS PNP DARL 30V 0.5A TO92
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    DigiKey MPSA64 Bulk 15,000
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    Bristol Electronics MPSA64 1,933
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    onsemi MPSA64G

    TRANS PNP DARL 30V 0.5A TO92
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    onsemi MPSA64_D75Z

    TRANS PNP DARL 30V 1.2A TO92-3
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    DigiKey MPSA64_D75Z Ammo Pack
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    onsemi MPSA64RLRMG

    TRANS PNP DARL 30V 0.5A TO92
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    DigiKey MPSA64RLRMG Ammo Pack
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    PSA64 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    BTA65

    Abstract: PSA65
    Text: E E M C O N O U C TO R m MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS


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    PDF MPSA65 MMBTA65 PZTA65 MPSA65 MMBTA65 PSA64 BTA65 PSA65

    MPSA63

    Abstract: MPSA64
    Text: I • N AUER PHILIPS/DISCRETE b'îE D ■ , ^ 5 3 ^ 3 1 GDEÖDEl T7M BiAPX I MPSA63 I PSA64 P-N-P DARLINGTON TRANSISTORS P-N-P d a rlin g to n transistors in a plastic TO -92 envelope fo r general purpose applications. Q U IC K R E F E R E N C E D A T A M PSA64


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    PDF MPSA63 MPSA64 NECC-C-002 MPSA64

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS T A = 25°C unless o th e rw ise noted


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    PDF MPSA63 MMBTA63 PZTA63 MPSA63 MMBTA63 PSA64

    Untitled

    Abstract: No abstract text available
    Text: MPSA63 PSA64 _ y v. P-N-P DARLINGTON TRANSISTORS P-N-P d a rlin g to n transistors in a plastic TO 92 package fo r general purpose applications. QUICK REFERENCE DATA M PSA64 M PSA63 C o lle c to r-e m itte r voltage II o LU CO > C o lle c to r base voltage


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    PDF MPSA63 MPSA64 PSA64 PSA63

    mpsa64

    Abstract: MPSA63 MPSA75 MPS-A62
    Text: MPSA55, MPSA56 For Specifications, MPSA62 See M PSA 05, M PSA 06 Data thru MAXIMUM RATINGS Symbol MPSA62 MPSA63 M PSA64 Unit Collector-Emitter Voltage VC ES -2 0 -3 0 Vdc Collector-Base Voltage v CBO -2 0 Emitter-Base Voltage v EBO Rating -3 0 - 10 Vdc Vdc


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    PDF MPSA55, MPSA56 MPSA62 MPSA62 MPSA63 PSA64 MPSA64* O-226AA) MPSA63, mpsa64 MPSA75 MPS-A62

    MPSA63

    Abstract: MPSA64 MPSA05 MPSA06 MPSA55 MPSA56 MPSA62 MPSA75 MPS-A63 MPS-A62
    Text: MPSA55, MPSA56 1 For Specifications, See MPSA05, MPSA06 Data thru M A XIM U M RATINGS Rating Sym bol Collector-Emitter Voltage M PSA62 M PSA63 M PSA 6 4 Unit VC ES -2 0 -3 0 Vdc Collector-Base Voltage VCBO -2 0 -3 0 Vdc Emitter-Base Voltage vebo - 10 Vdc ic


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    PDF MPSA55, MPSA56 MPSA05, MPSA06 MPSA62 MPSA63 MPSA64 MPSA62 MPSA64* MPSA05 MPSA55 MPSA56 MPSA75 MPS-A63 MPS-A62

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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    2n5963

    Abstract: No abstract text available
    Text: I Sm all Signal Transistors TO-92 Case TO-92 T Y P E NO. F A M IL Y LEA D VcBO v CEO v EBO V (V ) (V ) 'C B O hFE p V CBC v CE @ IC (V ) (m A ) V C E ( S A T ) ® !C C 0b »T NF to ff CODE (V ) (V ) (m A ) *< CES *VC E S 2N2712 NPN A M PU SW ITCH ECB


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    PDF 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3392 2N3393 2N3395 2N3396 2n5963

    SA62

    Abstract: MPSA63 equivalent MPS62
    Text: TOSHIBA MPSA62,63,64 Transistor Unit in mm Silicon PNP Epitaxial Type M AX. Designed For Pre-Amplifier Input Application Features • High DC Current Gain @ lc = 10mA - hFE = 5000 Min. MPSA63 10000 (Min.) PSA64 20000 (Min.) MPSA62 • Collector-Emitter Breakdown Voltage


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    PDF MPSA62 MPSA63 MPSA64 MPSA62 MPSA63, MPSA64 MPSA12, SA62 MPSA63 equivalent MPS62

    PN5416

    Abstract: 2N5415
    Text: 18 Small Signal Leaded Devices High Voltage Transistors n Type hFE min @ ^CE sat @ *c max (V) (mA) 'c (mA) fT min (MHz) @ 'c Pkg (V) *c (mA) TO-39 TO-39 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 350 250 140 160 300 200 350 250 1000 1000 600 600 500 500 1000 1000


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    PDF 2N3439 2N5550 2N5551 PSA42 PSA43 PN3439 PN3440 2N5400 2N5401 2N5415 PN5416

    TRANSISTOR A64

    Abstract: FAIRCHILD SOT-223 MARK MMBTA64 MPSA64 PZTA64
    Text: S E M IC O N D U C T O R tm PSA64 MMBTA64 TO-92 SOT-23 PZTA64 B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Màximum Rdtinys


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    PDF MPSA64 MMBTA64 PZTA64 OT-23 OT-223 TRANSISTOR A64 FAIRCHILD SOT-223 MARK MMBTA64 MPSA64 PZTA64

    UAA2001

    Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
    Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­


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    PDF 0HF40 0HF60 0HF80 6FP10 6F100 70HF10 UAA2001 MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402

    bc557

    Abstract: BDX472 BDX452
    Text: Philips Semiconductors Concise Catalogue 1996 Small-signal transistors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS GENERAL-PURPOSE L.F. BIPOLAR TRANSISTORS CONTINUED _ LEADED TYPES ratings type num ber characteristics


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    PDF BC160 BC161 BC177 BC327 BC328 BC369 BC556 BC557 BC558 BC636 BDX472 BDX452

    2SC3133 cross reference

    Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
    Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905


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    PDF 2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288

    PSA77C

    Abstract: PS6535C
    Text: SP RA GU E/ SENIC OND GROUP 8 5 1 4 0 1 9 SPRA G U E , i3 D • 0513050 Q00357M 7 ■ S E M IC O N D S / IC S 93D 7 "-" & 7 03574 ^ BIPOLAR TRANSISTOR CHIPS PNP Transistors ‘MPS’ Device Types ELECTRICAL C HA R A C T ER IST IC S at TA = 25°C DC Current Gain


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    PDF Q00357M PSA77C PS6535C

    z10m

    Abstract: psa56
    Text: Transistors TO-92 JEDEC Standards Numbers #N PN Transistors General purpose small signal amplifiers P a ckage BV qbo Min. BV ceo Min. 2N2925 TO -92 (ECB) 25V 25V 2N3711 MPS3711 TO -92 (ECB) (EBC) 30V 2N3860 TO -92 (ECB) 2N5088 BV ebo Min. hFE Min . Max.


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    PDF 100nA 160MHz 2N2925 2N3711 MPS3711 2N3860 100nA V100m PS-A63 z10m psa56