Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PTFA043002E Search Results

    SF Impression Pixel

    PTFA043002E Price and Stock

    Infineon Technologies AG PTFA043002E-V1

    RF MOSFET LDMOS 32V H-30275-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA043002E-V1 Tray
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    PTFA043002E Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA043002E Infineon Technologies 470 MHz to 860 MHz; Package: PG: H-30275-4; Flange Type: Bolt Down; Matching: Input; Frequency Band: 470.0 - 860.0 MHz; P1dB (typ): 300.0 W; Supply Voltage: 32.0 V; Original PDF
    PTFA043002E V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 300W H-30275-4 Original PDF
    PTFA043002EV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 300W H-30275-4 Original PDF

    PTFA043002E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PTFA043002

    Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The


    Original     		PDF PTFA043002E PTFA043002 300-watt, H-30275-4 PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010

    Untitled

    Abstract: No abstract text available
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The


    Original     		PDF PTFA043002E PTFA043002 300-watt, H-30275-4

    PTFA043002E

    Abstract: SCHEMATIC DIAGRAM 3.3kv
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. Thermallyenhanced packaging provides the coolest operation available. Full gold


    Original     		PDF PTFA043002E PTFA043002 300-watt, PTFA043002E SCHEMATIC DIAGRAM 3.3kv

    PTFA043002E

    Abstract: PTFA043002 LM7805 type 103 capacitor, 2kv RF, 1300 pf BCP56
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The


    Original     		PDF PTFA043002E PTFA043002 300-watt, H-30275-4 PTFA043002E LM7805 type 103 capacitor, 2kv RF, 1300 pf BCP56

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    PTFA043002E

    Abstract: LDU601C M2.5 torque settings PTF*A043002E PTFA043002 LDU60 100W 12 volt ldmos rm2005
    Text: LDU601C 600W pep –27dBc min LDMOS Technology Designed for analog TV applications, this pallet amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. Patented bias control and matching circuit. • • •


    Original     		PDF LDU601C 27dBc PTFA043002E GR01790 LDU601C M2.5 torque settings PTF*A043002E PTFA043002 LDU60 100W 12 volt ldmos rm2005

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578

    blf578

    Abstract: MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 TEA 2025 equivalent blf278 rf amplifier radar amplifier s-band 2SK163 GaN ADS HSMP3814
    Text: RF マニュアル第 12版 RF製品用のアプリケーションおよび設計マニュアル 2009年6月 ハイパフォーマンス・アナログを体験 NXPの RF マニュアルでRF設計がこ れまでになく簡単に 『NXPの RF マニュアル 』 は、今日RF設計者向けに市場に出回っているレファレンス・ツー


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN blf578 MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 TEA 2025 equivalent blf278 rf amplifier radar amplifier s-band 2SK163 GaN ADS HSMP3814

    LDU601C

    Abstract: 600W TRANSISTOR AUDIO AMPLIFIER PTFA043002E M2.5 torque settings 300W TRANSISTOR AUDIO AMPLIFIER 600w power amplifier GR01790 LDU60 300w amplifier rf amplifier 100w
    Text: LDU601C 600W pep –27dBc min LDMOS Technology Designed for analog TV applications, this pallet amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. Patented bias control and matching circuit. • • •


    Original     		PDF LDU601C 27dBc PTFA043002E GR01790 LDU601C 600W TRANSISTOR AUDIO AMPLIFIER M2.5 torque settings 300W TRANSISTOR AUDIO AMPLIFIER 600w power amplifier GR01790 LDU60 300w amplifier rf amplifier 100w

    sot-89 BV SMD TRANSISTOR MARKING CODE

    Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
    Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ


    Original     		PDF NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PDF PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503