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    PTFA180701E Price and Stock

    MACOM PTFA180701E-V4-R0

    RF MOSFET LDMOS 28V H-36265-2
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    DigiKey PTFA180701E-V4-R0 50
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    MACOM PTFA180701E-V4-R250

    RF MOSFET LDMOS 28V H-36265-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA180701E-V4-R250 Reel 250
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    Infineon Technologies AG PTFA180701E-V4

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    Bristol Electronics PTFA180701E-V4 699
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    PTFA180701E Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA180701E Infineon Technologies 1800 MHz to 2000 MHz; Package: PG:H-36265-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 1,805.0 - 1,880.0 MHz; P1dB (typ): 70.0 W; Supply Voltage: 28.0 V Original PDF
    PTFA180701EV4 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 70W H-36265-2 Original PDF
    PTFA180701E-V4-R0 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET LDMOS 28V H-36265-2 Original PDF
    PTFA180701EV4R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET LDMOS 28V H-36265-2 Original PDF
    PTFA180701E-V4-R250 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 70W H-36265-2 Original PDF
    PTFA180701EV4R250 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 70W H-36265-2 Original PDF
    PTFA180701EV4R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 70W H-36265-2 Original PDF

    PTFA180701E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    a1807

    Abstract: BCP56 LM7805 PTFA180701E PTFA180701F RO4350 PTF180701E
    Text: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description PTFA180701E Package H-30265-2 The PTFA180701E and PTFA180701F are thermally-enhanced, 70-watt, internally-matched GOLDMOS FETs intended for EDGE applications in


    Original     		PTFA180701E PTFA180701F H-30265-2 PTFA180701E PTFA180701F 70-watt, H-31265-2 a1807 BCP56 LM7805 RO4350 PTF180701E PDF

    a1807

    Abstract: PTFA180701E PTF180701E A3563 1800 ldmos BCP56 LM7805 PTFA180701F RO4350 H-36265-2
    Text: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with


    Original     		PTFA180701E PTFA180701F PTFA180701E PTFA180701F 70-watt H-36265-2 H-37265-2 a1807 PTF180701E A3563 1800 ldmos BCP56 LM7805 RO4350 H-36265-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with


    Original     		PTFA180701E PTFA180701F PTFA180701E PTFA180701F 70-watt H-36265-2 H-37265-2 PDF

    a1807

    Abstract: LM7805 PTFA180701E PTFA180701F RO4350 BCP56
    Text: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with


    Original     		PTFA180701E PTFA180701F PTFA180701E PTFA180701F 70-watt H-36265-2 H-37265-2 a1807 LM7805 RO4350 BCP56 PDF

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA PDF

    PTFA142401EL

    Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PTFA041501E PTFA041501F PTFA070601E PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 H-36260-2 PTFA142401EL PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E PDF

    PTFA041501E

    Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PTFA041501E PTFA041501F PTFA070601E 725-7452FL PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 PTFA041501E PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 PDF