Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PTFA211801E Search Results

    SF Impression Pixel

    PTFA211801E Price and Stock

    Infineon Technologies AG PTFA211801E-V4

    RF MOSFET LDMOS 28V H-36260-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA211801E-V4 Tray
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    MACOM PTFA211801E-V5-R0

    RF MOSFET LDMOS 28V H-36260-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA211801E-V5-R0 50
    • 1 -
    • 10 -
    • 100 $145.3124
    • 1000 $145.3124
    • 10000 $145.3124
    		Buy Now
    Mouser Electronics PTFA211801E-V5-R0
    • 1 -
    • 10 -
    • 100 $146.54
    • 1000 $146.54
    • 10000 $146.54
    		Get Quote

    Infineon Technologies AG PTFA211801EV5XWSA1

    RF MOSFET LDMOS 28V H-36260-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA211801EV5XWSA1 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Infineon Technologies AG PTFA211801E-V4-R250

    RF MOSFET LDMOS 28V H-36260-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA211801E-V4-R250 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    MACOM PTFA211801E-V5-R250

    RF MOSFET LDMOS 28V H-36260-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA211801E-V5-R250 Reel 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $145.31248
    • 10000 $145.31248
    		Buy Now
    Mouser Electronics PTFA211801E-V5-R250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $146.13
    • 10000 $146.13
    		Get Quote
    Find more PTFA211801E price and stock on Findchips.com

    PTFA211801E Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA211801E Infineon Technologies 2100 MHz to 2200 MHz; Package: PG:H-36260-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,110.0 - 2,170.0 MHz; P1dB (typ): 180.0 W; Supply Voltage: 28.0 V; Original PDF
    PTFA211801E V4 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 2.14GHZ H-36260-2 Original PDF
    PTFA211801EV4 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 180W H-36260-2 Original PDF
    PTFA211801E V4 R250 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 2.14GHZ H-36260-2 Original PDF
    PTFA211801EV4R250 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 180W H-36260-2 Original PDF
    PTFA211801EV5 Infineon Technologies RF FETs, Discrete Semiconductor Products, FET RF LDMOS 180W H36260-2 Original PDF
    PTFA211801E-V5-R250 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 2.14GHZ H36260-2 Original PDF
    PTFA211801EV5R250 Infineon Technologies RF FETs, Discrete Semiconductor Products, FET RF LDMOS 180W H36260-2 Original PDF
    PTFA211801EV5R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 2.14GHZ H36260-2 Original PDF
    PTFA211801EV5XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 2.14GHZ H36260-2 Original PDF

    PTFA211801E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A211801E

    Abstract: 200B103 LM7805 PTFA211801E
    Text: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA211801E PTFA211801F 180-watt, 2140dangerous A211801E 200B103 LM7805

    LM7805

    Abstract: A211801E BCP56 PTFA211801E R250 H-36260-2 infineon 6260
    Text: PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA211801E PTFA211801E 180-watt, H-36260-2 LM7805 A211801E BCP56 R250 H-36260-2 infineon 6260

    Untitled

    Abstract: No abstract text available
    Text: PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA211801E PTFA211801E 180-watt, H-36260-2

    PTFA211801E

    Abstract: a211 BCP56 LM7805 PTFA211801F
    Text: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA211801E PTFA211801F PTFA211801E PTFA211801F 180-watt, a211 BCP56 LM7805

    A211801E

    Abstract: PTFA211801E
    Text: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA211801E PTFA211801F 180-watt, 2140dangerous A211801E

    PTFA211801E

    Abstract: PTFA211801F
    Text: Product Brief PTFA211801E PTFA211801F WCDMA RF Power FET The PTFA211801E and PTFA211801F Performance Two devices from our next generation of GOLDMOS devices, these high-gain devices bring rugged quality to your amplifier designs. Specifically optimized for WCDMA applications, the PTFA211801E and


    Original     		PDF PTFA211801E PTFA211801F PTFA211801E PTFA211801F B134-H8501-X-0-7600

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PDF PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    PTFA142401EL

    Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PDF PTFA041501E PTFA041501F PTFA070601E PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 H-36260-2 PTFA142401EL PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E

    PTFA041501E

    Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PDF PTFA041501E PTFA041501F PTFA070601E 725-7452FL PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 PTFA041501E PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PDF PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503