PU4121
Abstract: PU4421 PUB4121 PUB4421
Text: Power Transistor Arrays PUB4121 PU4121 , PUB4421 (PU4421) Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm • Features M Di ain sc te on na tin nc ue e/ d • Built-in zener diode (30 V) between collector and base • Small variation in withstand pressure
|
Original
|
PDF
|
PUB4121
PU4121)
PUB4421
PU4421)
PU4121
PU4421
PUB4121
PUB4421
|
Untitled
Abstract: No abstract text available
Text: Power Transistor Arrays PUB4121 PU4121 , PUB4421 (PU4421) Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm • Features • Built-in zener diode (30 V) between collector and base • Small variation in withstand pressure
|
Original
|
PDF
|
PUB4121
PU4121)
PUB4421
PU4421)
|
PU4121
Abstract: PU4421 PUB4121 PUB4421
Text: Power Transistor Arrays PUB4121 PU4121 , PUB4421 (PU4421) Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm • Features • Built-in zener diode (30 V) between collector and base • Small variation in withstand pressure
|
Original
|
PDF
|
PUB4121
PU4121)
PUB4421
PU4421)
PU4121
PU4421
PUB4121
PUB4421
|
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
|
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
|
Untitled
Abstract: No abstract text available
Text: Power Transistor Arrays PUB4123 PU4123 , PUB4423 (PU4423) Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm • Features • Built-in zener diode (60 V) between collector and base • Small variation in withstand pressure
|
Original
|
PDF
|
PUB4123
PU4123)
PUB4423
PU4423)
PUB4121
PU4121)
PUB4421
PU4421)
|
PU4123
Abstract: PU4121 PU4421 PU4423 PUB4121 PUB4123 PUB4421 PUB4423
Text: Power Transistor Arrays PUB4123 PU4123 , PUB4423 (PU4423) Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm • Features M Di ain sc te on na tin nc ue e/ d • Built-in zener diode (60 V) between collector and base • Small variation in withstand pressure
|
Original
|
PDF
|
PUB4123
PU4123)
PUB4423
PU4423)
PUB4121
PU4121)
PUB4421
PU4421)
PU4123
PU4121
PU4421
PU4423
PUB4121
PUB4123
PUB4421
PUB4423
|
PU4123
Abstract: PU4121 PU4421 PU4423 PUB4121 PUB4123 PUB4421 PUB4423
Text: Power Transistor Arrays PUB4123 PU4123 , PUB4423 (PU4423) Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm • Features • Built-in zener diode (60 V) between collector and base • Small variation in withstand pressure
|
Original
|
PDF
|
PUB4123
PU4123)
PUB4423
PU4423)
PUB4121
PU4121)
PUB4421
PU4421)
PU4123
PU4121
PU4421
PU4423
PUB4121
PUB4123
PUB4421
PUB4423
|
