BLV97
Abstract: IEC134
Text: PHILIPS INTERNATIONAL MIE D m 711002b Q0S73ÔÔ ö ‘' L IPHIN BLV97 r - 3 3 - // UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor in SOT171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.
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OT171
T-33-11
7Z94379
BLV97
IEC134
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Untitled
Abstract: No abstract text available
Text: 0PA111 B U R R -B R O W N [ ] Low Noise Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 100% Tested, 8nvVfiz max 10kHz • LOW BIAS CURRENT: 1pA max • PRECISION INSTRUMENTATION • DATA ACQUISITION • LOW OFFSET: 250[iV max
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0PA111
10kHz)
120dB
100dB
OPA111
ZZ001
17313bS
D027370
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Untitled
Abstract: No abstract text available
Text: HA RR IS S E M I C O N D S E CT OR 4 3 D 2 2 7 1 D 0 S 7 3 Q S 2 • HAS 37E D Optoelectronic S p e c ific a tio n s _ T-4I-S3 AC Input Photon Coupled Isolator CNY35 — i.— -1 -j_ ■rtAA 3 1» 1 c ITOPV1EWI S 4 S \ G a A s Infared Em itting D iode s & N P N Silicon Photo-Transistor
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CNY35
CNY35
S-42662
92CS-429S1
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00S73
Abstract: 6805L IC-3433 KM 3502 P
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT u P D 4 2 S 16 8 0 5 L , 4 2 1 6 8 0 5 L / 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE Description The /¿PD42S16805L, 4216805L are 2 097 152 words by 8 bits dynamic CMOS RAMs with optional hyper page
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uPD42S16805L
uPD4216805L
iiPD42S16805L,
4216805L
28-pin
/iPD42S16805L-A60,
4216805L-A60
IPD42S16805L-A70,
4216805L-A70
00S73
6805L
IC-3433
KM 3502 P
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MCM54402AZ70
Abstract: MCM54402AN60
Text: MOTOROLA SC M E M O R Y / A S I C SfiE D b3b7251 0037370 03b B i H0T3 ^ " V MOTOROLA é> " « 2 « ? — J S " SEM ICO NDU CTO R TECHNICAL DATA MCM54402A Advance Information 4M x 1 CMOS Dynamic RAM Static Column The M C M 54402A is a 0.7|i C M OS high-speed dynam ic random a ccess memory. It is
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b3b7251
MCM54402A
4402A
MCM54402A
ber--------------54402A
MCM54402AN60
MCM54402AN70
MCM54402AN80
MCM54402AN60R2
MCM54402AZ70
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