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RJH60D0 Abstract: RJH60 PRSS0004ZE-A SC-65 Text: Preliminary Datasheet RJH60D0DPK R07DS0155EJ0200 Previous: REJ03G1845-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	RJH60D0DPK R07DS0155EJ0200 REJ03G1845-0100) PRSS0004ZE-A di9044 RJH60D0 RJH60 PRSS0004ZE-A SC-65	PDF

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RJH60D0

Abstract: RJH60 PRSS0004ZE-A SC-65
Text: Preliminary Datasheet RJH60D0DPK R07DS0155EJ0200 Previous: REJ03G1845-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Original

RJH60D0DPK R07DS0155EJ0200 REJ03G1845-0100) PRSS0004ZE-A di9044 RJH60D0 RJH60 PRSS0004ZE-A SC-65

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