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RJH60D0 Abstract: No abstract text available Text: Preliminary Datasheet RJH60D0DPK Silicon N Channel IGBT Application: Inverter R07DS0155EJ0300 Rev.3.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	RJH60D0DPK R07DS0155EJ0300 PRSS0004ZE-A RJH60D0	PDF

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RJH60D0

Abstract: No abstract text available
Text: Preliminary Datasheet RJH60D0DPK Silicon N Channel IGBT Application: Inverter R07DS0155EJ0300 Rev.3.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

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RJH60D0DPK R07DS0155EJ0300 PRSS0004ZE-A RJH60D0

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