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RJH60D3 Abstract: rjh60d3dpp PRSS0003AF-A RJH60D3DPP-M0 Text: Preliminary Datasheet RJH60D3DPP-M0 Silicon N Channel IGBT Application: Inverter R07DS0162EJ0100 Rev.1.00 Sep 21, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)	Original	RJH60D3DPP-M0 R07DS0162EJ0100 PRSS0003AF-A O-220FL) voltage9044 RJH60D3 rjh60d3dpp PRSS0003AF-A RJH60D3DPP-M0	PDF

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RJH60D3

Abstract: rjh60d3dpp PRSS0003AF-A RJH60D3DPP-M0
Text: Preliminary Datasheet RJH60D3DPP-M0 Silicon N Channel IGBT Application: Inverter R07DS0162EJ0100 Rev.1.00 Sep 21, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)

Original

RJH60D3DPP-M0 R07DS0162EJ0100 PRSS0003AF-A O-220FL) voltage9044 RJH60D3 rjh60d3dpp PRSS0003AF-A RJH60D3DPP-M0

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