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RJH60D3 Abstract: RJH60D3DPP-M0 Text: Preliminary Datasheet RJH60D3DPP-M0 Silicon N Channel IGBT Application: Inverter R07DS0162EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)	Original	RJH60D3DPP-M0 R07DS0162EJ0200 PRSS0003AF-A O-220FL) RJH60D3 RJH60D3DPP-M0	PDF

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RJH60D3

Abstract: RJH60D3DPP-M0
Text: Preliminary Datasheet RJH60D3DPP-M0 Silicon N Channel IGBT Application: Inverter R07DS0162EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)

Original

RJH60D3DPP-M0 R07DS0162EJ0200 PRSS0003AF-A O-220FL) RJH60D3 RJH60D3DPP-M0

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